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    ACESS CONTROL SYSTEM Search Results

    ACESS CONTROL SYSTEM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    ACESS CONTROL SYSTEM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A4998

    Abstract: IXF1002 gmii phy A4989 a4945 PKC 2135
    Text: Advanced Datasheet SEPTEMBER 1999 Order Number: 278310-001 IXF1002 Dual Port Gigabit Ethernet Controller General Description Introduction The IXP1002 Dual Port Gigabit Ethernet Media Acess Controller MAC , provides two independent 1000 Mb/s intelligent, high-performance Media Access Control


    Original     		PDF IXF1002 IXP1002 1000BASE-X A4998 gmii phy A4989 a4945 PKC 2135

    MSP430

    Abstract: 00CFh 01FFH 0212H
    Text: MSP430 Family 4 Memory Organization Memory Organization Topic Page 4.1 Data in the Memory 4.2 Internal ROM Organization 4-5 4-6 4.3 RAM and Peripheral Organization 4-7 4-1 4 Memory Organization 4 4-2 MSP430 Family MSP430 Family Memory Organization The MSP430 family's memory space is configured in a "von-Neumann Architecture" and


    Original     		PDF MSP430 00CFh 01FFH 0212H

    ADI1981

    Abstract: BCM2035 20XCD Broadcom shell
    Text: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 2.I ntroducti on and Speci fi cati on 2-1.I ntroducti on 1 14" W i de Note PC ForOpti m um Entertai nm ent) - Qui ck Boot I ncl ude "AVSNow" and Rem ote Control l er - Hi gh bri ghtness LCD gl


    Original     		PDF 44064MB 333MHz 40/60GB) iEEE1394, ADI1981 BCM2035 20XCD Broadcom shell

    WC1G

    Abstract: ct Potentiometer ground relay CURRENT TRANSFORMER Acess control SYSTEM
    Text: Ground Fault Relays Function: WILMAR Protective Relays – WC1G Series - Grounded TERMINAL STRIPS #6 - 32 SCREWS 3.8 3.0 WILMAR Ground Fault Detectors are designed to provide very sensitive Ground-Current protection for motor, equipment and personnel from damage or electrical


    Original     		PDF 120AC 220AC 230AC 380AC 400AC 460AC 480AC 575AC WC1G-120AC WC1G ct Potentiometer ground relay CURRENT TRANSFORMER Acess control SYSTEM

    2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM

    Abstract: rf based intruder alarm HCS08QE 4 bit RF based remote control circuit diagram window curtain automation MC1323X wireless SURROUND sound system circuit diagram of wireless door 20 pin diagram of zigbee Zigbee-pro
    Text: Fact Sheet MC1323x 2.4 GHz IEEE 802.15.4/ZigBee® System-on-Chip Solution The CPU complex is based on the successful HCS08QE microcontroller. The CPU offers a 16-bit stack pointer, 16-bit index register and 8-bit accumulator. A range of functionality is


    Original     		PDF MC1323x HCS08QE 16-bit 48-LGA MC13233C 48-LGA 260/tray 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM rf based intruder alarm 4 bit RF based remote control circuit diagram window curtain automation wireless SURROUND sound system circuit diagram of wireless door 20 pin diagram of zigbee Zigbee-pro

    Untitled

    Abstract: No abstract text available
    Text: Fact Sheet MC1323x 2.4 GHz IEEE 802.15.4/ZigBee® System-onChip Solution Applications Overview Consumer Our fourth-generation 2.4 GHz IEEE 802.15.4/ ZigBee® ready solution has been designed to serve the requirements of the consumer electronics market, yet offers a feature set and


    Original     		PDF MC1323x MC13234 MC13237, MC1323x, MC13237CHT MC13237CHTR2 12-bit 48-LGA, 260/tray

    H3084

    Abstract: RMII PHY MTD505 h1838
    Text: MYSON TECHNOLOGY MTD505 Preliminary 5 Port 10M/100M Ethernet Switch FEATURES GENERAL DESCRIPTION • • • • The MTD505 complies fully with the IEEE802.3, 802.3u and 802.3x specifications and is a non-blocking 5 port 10M/100M Ethernet switch device.


    Original     		PDF MTD505 10M/100M MTD505 IEEE802 MTD505, H3084 RMII PHY h1838

    TXD70

    Abstract: RMII PHY MTD508
    Text: MYSON TECHNOLOGY MTD508 Preliminary 8 Port 10M/100M Ethernet Switch FEATURES GENERAL DESCRIPTION • IEEE802.3 and IEEE802.3u compliant. • Provide 8 RMII (Reduced Media Independent Interface) ports. • Programmable 1K/8K MAC addresses filtering. • Store and forward switching function and bad


    Original     		PDF MTD508 10M/100M IEEE802 pressure/802 75MHz MTD508 TXD70 RMII PHY

    BGB100

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BGB100 0 dBm TrueBlue radio module Preliminary specification 2001 Oct 25 Philips Semiconductors Preliminary specification 0 dBm TrueBlue radio module BGB100 FEATURES APPLICATIONS • Plug-and-play Bluetooth class 2 radio module, needs


    Original     		PDF BGB100 SCA73 budgetnum/ed/pp16

    DECT RF Transceiver 1.9 ghz

    Abstract: RF MODULE CIRCUIT DIAGRAM dect BGB100 GSM-900 SOT649 BGB1000
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BGB100 0 dBm TrueBlue radio module Preliminary specification 2002 Jan 03 Philips Semiconductors Preliminary specification 0 dBm TrueBlue radio module BGB100 FEATURES APPLICATIONS • Plug-and-play Bluetooth class 2 radio module, needs


    Original     		PDF BGB100 SCA73 budgetnum/ed/pp16 DECT RF Transceiver 1.9 ghz RF MODULE CIRCUIT DIAGRAM dect BGB100 GSM-900 SOT649 BGB1000

    En1522

    Abstract: RMII12 "filtering database" RMII PHY uplink DMA13 MTD516 REG14 RXD11 RMII Specification revision 1.2
    Text: MYSON TECHNOLOGY MTD516 Preliminary 16 Port 10M/100M Ethernet Switch FEATURES GENERAL DESCRIPTION • IEEE802.3 and IEEE802.3u compliant. • Provide 16 RMII (Reduced Media Independent Interface) ports. • Programmable 1K/8K MAC addresses filtering database.


    Original     		PDF MTD516 10M/100M IEEE802 pressure/802 83MHz MTD516 En1522 RMII12 "filtering database" RMII PHY uplink DMA13 REG14 RXD11 RMII Specification revision 1.2

    ANT 7910 regulator

    Abstract: BGB100 GSM-900 CNR50
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BGB100 Bluetooth radio module Preliminary specification 2001 Mar 29 Philips Semiconductors Preliminary specification Bluetooth radio module BGB100 FEATURES APPLICATIONS • Plug-and-play Bluetooth class 2 radio module, needs


    Original     		PDF BGB100 budgetnum/ed/pp16 ANT 7910 regulator BGB100 GSM-900 CNR50

    HP COMPAQ MOTHERBOARD CIRCUIT diagram

    Abstract: mitsumi d353g floppy drive hitachi dk23ea-30 logitech 99 mouse controller PC MOTHERBOARD CIRCUIT diagram for Acer mitsumi D353G T30V1 IC25N030ATMR04-0 JU-226A033FC MK6021GAS
    Text: Acer TravelMate 240/250 Series Service Guide SERVICE CD PART NO.: VD.T30V1.001 PRINTED IN TAIWAN Chapter 1 System Introduction Features This computer was designed with the user in mind. Here are just a few of its many features: Performance T Intel Mobile Pentium® 4 series processors with 512 KB L2 cache or Intel® Mobile Celeron®


    Original     		PDF T30V1 64-bit 16-bit 11a/b) 340MB 128MB CB1394/DVC HP COMPAQ MOTHERBOARD CIRCUIT diagram mitsumi d353g floppy drive hitachi dk23ea-30 logitech 99 mouse controller PC MOTHERBOARD CIRCUIT diagram for Acer mitsumi D353G IC25N030ATMR04-0 JU-226A033FC MK6021GAS

    Memory

    Abstract: No abstract text available
    Text: 512Kx8/256Kx16/128Kx32, 15 - 35ns, 30A167-00 A Surface Mount FTE32KX32XP/XHP 1 Megabit CMOS EEPROM DESCRIPTION: The FTE32KX32XP/XHP is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organised as 32K X 32, 64K X 16 or 128K


    Original     		PDF 512Kx8/256Kx16/128Kx32, 30A167-00 FTE32KX32XP/XHP FTE32KX32XP/XHP 16-bit 32-bit 64-BWDW Memory

    Untitled

    Abstract: No abstract text available
    Text: TC51W3216XB-80,-85 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51W3216XB is a 33,554,432-bit pseudo static random access memory PSRAM organized as 2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high density, high


    Original     		PDF TC51W3216XB-80 152-WORD 16-BIT TC51W3216XB 432-bit

    Untitled

    Abstract: No abstract text available
    Text: TC51W6416XB-80,-85 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51W6416XB is a 67,108,864-bit pseudo static random access memory PSRAM organized as 4,194,304 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high density, high


    Original     		PDF TC51W6416XB-80 304-WORD 16-BIT TC51W6416XB 864-bit

    mbus acquisition

    Abstract: mbus controllers 106 25K
    Text: KS0155 ELECTR O NICS DSP The KS0155 is specifically designed for use in digital video decoding systems based on the MPEG2 algorithm. It receives transport packet data at a vaiable rate up to 29.27Mbps. Data is decompressed and clear video is passed on to the video reconstruction chip at 27MHz. The KS0155


    OCR Scan     		PDF KS0155 KS0155 27Mbps. 27MHz. CCIR-656 27MHz 100-TQFP-1414-AN mbus acquisition mbus controllers 106 25K

    3DSD3G48VQ6486

    Abstract: No abstract text available
    Text: MEMORY MODULE SDRam 64Mx48-QFP Synchronous Dynamic Ram MODULE 3DSD3G48VQ6486 3Gbit SDRam organized as 64Mx48, based on 32Mx16 Pin Assignment Top View QFP 114-(Pitch : 0.635mm) - Organized as 64Mx48-bit. - Single +3.3V power supply. 27 28 29 30 31 32 33 34


    OCR Scan     		PDF 64Mx48-QFP 3DSD3G48VQ6486 64Mx48, 32Mx16 635mm) 64Mx48-bit. 133MHz/CL3 3DFP-0486-REV 3DSD3G48VQ6486

    Untitled

    Abstract: No abstract text available
    Text: moi _ C Electronic DMlgn» Ine. EDI411024C High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic Features The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The use of triple-layer polysilicon process, combined with


    OCR Scan     		PDF EDI411024C EDI411024C

    XS 3860 b

    Abstract: No abstract text available
    Text: Advance Information X28TC256 256K 32K x 8 Bit Turbo Access E2PROM FEATURES DESCRIPTION * 25ns Access Time —Within 64-Byte Page Boundaries —Page Crossing Status Output—WAIT * 5 Volt Byte and Page Alterable —Write From One to Sixty-Four Bytes —Write Time— 5ms Max.


    OCR Scan     		PDF X28TC256 64-Byte X28TC256 XS 3860 b

    EDI411024C

    Abstract: No abstract text available
    Text: ^ E D _ I Electronic Detlgns Inc. EDI411024C High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic Features The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The use of triple-layer polysilicon process, combined with


    OCR Scan     		PDF EDI411024C EDI411024C

    a719

    Abstract: EDI411024C 150ni 15trc 1MX1
    Text: E LECTRONIC DESIGNS INC m {• c h o n te o 30E D i • 3B30114 0 0 0 0 7 7 ? ö M EDI411024C High Performance Megabit Monolithic DRAM In e . < 1Mx1 Dynamic RAM CMOS, Monolithic y in m Features m T - y 6 -2 3 -1 5 The EDI4110240 is a high performance, low power


    OCR Scan     		PDF EDI411024C EDI4110240 T-46-23-15 EDI411024Ã Noie27 EDI411024C a719 150ni 15trc 1MX1

    Untitled

    Abstract: No abstract text available
    Text: ^EDI _EDI411024C Electronic Detlgns Inc. High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic Features The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The use of triple-layer polysilicon process, combined with


    OCR Scan     		PDF EDI411024C EDI411024C

    EDI411024C

    Abstract: No abstract text available
    Text: m o _ EDI411024C i Electronic D*4gn» Ine. High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic railLDHflDNAmf Features The ED 1411024C is a high performance, low power CMOS Dynamic RAM organized as 1 Megabit x1. The use of triple-layer polysilicon process, combined with


    OCR Scan     		PDF EDI411024C 1411024C EDI411024C