Ablebond 71-1
Abstract: Ablebond 71 Ablebond SN74ABT162827 SN74ABT162827A
Text: TEXAS INSTRUMENTS Qualification Notification for the SN74ABT162827A, Die Revision A October 17, 1996 Abstract Texas Instruments has qualified a device revision for the ABT162827A ‘A’ die. This device was redesigned in order to incorporate improved ESD protection circuitry. Included in this revision was an
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SN74ABT162827A,
ABT162827A
SN74ABT162827A
SN74ABT162827
ABT162827A,
ABT162827,
ABT162827
Ablebond 71-1
Ablebond 71
Ablebond
SN74ABT162827
SN74ABT162827A
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ablebond 163-4
Abstract: Ablebond 71 GaAs MMIC ESD, Die Attach and Bonding Guidelines HMMC-5023 ABLEBOND 55-1 Ablebond 190
Text: 23 GHz LNA 21.2 – 26.5 GHz Technical Data HMMC-5023 Features • Frequency Range: 21 .2 – 23.6 GHz and 24.5 – 26.5 GHz Specified 21– 30 GHz Performance • Low Noise Temperature: 226 K (2.5 dB N.F.) Typical • High Gain: 24 dB Typical • 50 Ω Input/Output Matching
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HMMC-5023
HMMC-5023
ablebond 163-4
Ablebond 71
GaAs MMIC ESD, Die Attach and Bonding Guidelines
ABLEBOND 55-1
Ablebond 190
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Ablebond 71-1
Abstract: j 5804 Ablebond SN54ABT2240A SN74ABT2240A TEXAS INSTRUMENTS, Mold Compound ASL2B
Text: TEXAS INSTRUMENTS Qualification Notification for the SN74ABT2240A, Die Revision J September 17, 1996 Abstract Texas Instruments has qualified a device revision for the ABT2240A, die revision ‘J’ . This device was redesigned in order to incorporate improved ESD protection circuitry. Revision to the A device is
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SN74ABT2240A,
ABT2240A,
SN74ABT2240A
ABT2240
ABT2240A
Ablebond 71-1
j 5804
Ablebond
SN54ABT2240A
TEXAS INSTRUMENTS, Mold Compound
ASL2B
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JESD22-A118
Abstract: SUMITOMO G631H cel9220 Ablebond 8600 sumitomo g770hcd SUMITOMO CRM1076 SUMITOMO G700 G631H sumitomo g770 sumitomo G700ly
Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A1004-01 DATE: 2-Apr-2010 Product Affected: 5mm x 5mm VFQFP-N-32 (Standard & Green) Refer to Attachment II for the affected part numbers
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A1004-01
2-Apr-2010
VFQFP-N-32
2-Jul-2010
S395CKLF
9LVRS395CKLFT
9LVRS395ENGKLF
9LVRS395ENGKLFT
9LVRS396AKLF
9LVRS396AKLFT
JESD22-A118
SUMITOMO G631H
cel9220
Ablebond 8600
sumitomo g770hcd
SUMITOMO CRM1076
SUMITOMO G700
G631H
sumitomo g770
sumitomo G700ly
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7261 markem
Abstract: Ablebond 968 Ablebond 84-1LMISR4 Ablebond 84-1*SR4 CF7000 7261 markem white lonco 3355 sd marking bh cf700095nf texas instruments package marking
Text: TEXAS INSTRUMENTS Informational Notification of the 400 and 600 MIL PDIP to Pacific Semiconductor Incorporated Manila January 29, 1998 Abstract Texas Instruments Standard Linear and Logic is announcing the transfer of package assembly site for 400 and 600 mil PDIP product from Texas Instruments, Philippines (TIPI) to a qualified subcontractor,
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25deg.
857-TI,
7261 markem
Ablebond 968
Ablebond 84-1LMISR4
Ablebond 84-1*SR4
CF7000
7261 markem white
lonco 3355
sd marking bh
cf700095nf
texas instruments package marking
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SUMITOMO CRM1076
Abstract: sumitomo g770hcd JESD22-A113 SUMITOMO G631H cel9220 JESD22-A118 JESD22-A103 Ablebond 8600 sumitomo g770 G631H
Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A1004-01R1 DATE: 4-Jun-2010 Product Affected: 5mm x 5mm VFQFP-N-32 (Standard & Green) Refer to Attachment II for the affected part numbers
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A1004-01R1
4-Jun-2010
VFQFP-N-32
2-Jul-2010
S395CKLF
9LVRS395CKLFT
9LVRS395ENGKLF
9LVRS395ENGKLFT
9LVRS396AKLF
9LVRS396AKLFT
SUMITOMO CRM1076
sumitomo g770hcd
JESD22-A113
SUMITOMO G631H
cel9220
JESD22-A118
JESD22-A103
Ablebond 8600
sumitomo g770
G631H
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Ablebond 71-1
Abstract: Ablebond 71 BCT8373 SN74BCT8373 SN74BCT8373A 5247 8 pin
Text: TEXAS INSTRUMENTS Qualification Notification for the SN74BCT8373A, Die Revision B February 7, 1996 Abstract Texas Instruments has qualified the SN74BCT8373A, Die Revision B, to replace the SN74BCT8373, no die revision. Die revision B was redesigned to conform to IEEE Standard 1149.11990 JTAG . The die and device revision are necessary to change the TDO drive state controls to
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SN74BCT8373A,
SN74BCT8373,
Ablebond 71-1
Ablebond 71
BCT8373
SN74BCT8373
SN74BCT8373A
5247 8 pin
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Untitled
Abstract: No abstract text available
Text: Preliminary Information Agilent AMMC-6220 6 - 20 GHz Low Noise Amplifier Data Sheet Features • • • • • • Wide Frequency Range: 6 – 20 GHz High Gain: 23 dB Low Noise Figure: 2.2 dB 50 Ω Input and Output Match Flat Gain Response Single 3V Supply Bias
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AMMC-6220
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90980
Abstract: MS 21059 AMMC-6231 9969
Text: Preliminary Information Agilent AMMC - 6231 18 –31 GHz Low Noise Amplifier Data Sheet Features Features • • • • • • Wide Frequency Range: 18 – 31 GHz High Gain: 22 dB Low Noise Figure: 2.4 dB 50 Ω Input and Output Match Flat Gain Response
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AMMC-6231:
90980
MS 21059
AMMC-6231
9969
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avago 4005
Abstract: 339E
Text: AMMC-6430 25 - 33 GHz Power Amplifier Data Sheet Chip Size: 2500 x 1870 µm 100 x 74 mils Chip Size Tolerance: ± 10µm (±0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features The AMMC-6430 MMIC is a broadband nearly 1W power
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AMMC-6430
AMMC-6430
25GHz
33GHz.
37dBm.
30GHz
29dBm
avago 4005
339E
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gold metal detectors
Abstract: AMMC-6345 AMMC-6430
Text: AMMC - 6430 25 - 33 GHz Power Amplifier Data Sheet Chip Size: 2500 x 1750 µm 100 x 69 mils Chip Size Tolerance: ± 10µm (±0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features The AMMC-6430 MMIC is a broadband nearly 1W power
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AMMC-6430
25GHz
33GHz.
37dBm.
30GHz
29dBm
AMMC-6430-W10
AMMC-6430-W50
gold metal detectors
AMMC-6345
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AMMC-6345
Abstract: AMMC-6430
Text: Agilent AMMC-6430 25 – 33 GHz Power Amplifier Data Sheet Features • Wide frequency range: 25 - 33 GHz • High gain: 17 dB • Power: @30 GHz, P-1dB=29 dBm Description The AMMC-6430 MMIC is a broadband nearly 1W power amplifier designed for use in transmitters that operate in
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AMMC-6430
AMMC-6430
25GHz
33GHz.
37dBm.
30GHz
29dBm
5989-1702EN
AMMC-6345
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AMMC-6345
Abstract: AMMC-6430
Text: AMMC - 6430 25 - 33 GHz Power Amplifier Data Sheet Chip Size: 2500 x 1750 µm 100 x 69 mils Chip Size Tolerance: ± 10µm (±0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features The AMMC-6430 MMIC is a broadband nearly 1W power
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AMMC-6430
25GHz
33GHz.
37dBm.
30GHz
29dBm
AMMC-6430-W10
AMMC-6430-W50
AMMC-6345
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DC TO 18GHZ RF AMPLIFIER MMIC
Abstract: gold metal detectors AMMC-6345 AMMC-6425 vg 9612
Text: AMMC - 6425 18 - 28 GHz Power Amplifier Data Sheet Chip Size: 2500 x 1750 µm 100 x 69 mils Chip Size Tolerance: ± 10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features The AMMC-6425 MMIC is a broadband 1W power amplifier
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AMMC-6425
18GHz
28GHz.
38dBm.
27GHz
30dBm
AMMC-6425-W10
AMMC-6425-W50
DC TO 18GHZ RF AMPLIFIER MMIC
gold metal detectors
AMMC-6345
vg 9612
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Untitled
Abstract: No abstract text available
Text: AMMC - 6430 25 - 33 GHz Power Amplifier Data Sheet Chip Size: 2500 x 1870 µm 100 x 74 mils Chip Size Tolerance: ± 10µm (±0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features The AMMC-6430 MMIC is a broadband nearly 1W power
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AMMC-6430
25GHz
33GHz.
37dBm.
30GHz
29dBm
AMMC-6430-W10
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Untitled
Abstract: No abstract text available
Text: AMMC - 6425 18 - 28 GHz Power Amplifier Data Sheet Chip Size: 2500 x 1870 µm 100 x 74 mils Chip Size Tolerance: ± 10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features The AMMC-6425 MMIC is a broadband 1W power amplifier designed for use in transmitters that operate in
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AMMC-6425
18GHz
28GHz.
38dBm.
27GHz
30dBm
AMMC-6425-W10
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AMMC-6345
Abstract: AMMC-6425 247E03
Text: Agilent AMMC-6425 18 – 28 GHz Power Amplifier Data Sheet Features • Wide frequency range: 18 - 28 GHz • High gain: 20 dB • Power: @27 GHz, P-1dB=30 dBm Description The AMMC-6425 MMIC is a broadband 1W power amplifier designed for use in transmitters that operate in
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AMMC-6425
AMMC-6425
18GHz
28GHz.
38dBm.
27GHz
30dBm
5989-1705EN
AMMC-6345
247E03
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AMMC-6425
Abstract: AMMC-6345 DF100
Text: AMMC - 6425 18 - 28 GHz Power Amplifier Data Sheet Chip Size: 2500 x 1750 µm 100 x 69 mils Chip Size Tolerance: ± 10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features The AMMC-6425 MMIC is a broadband 1W power
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AMMC-6425
18GHz
28GHz.
38dBm.
27GHz
30dBm
AMMC-6425-W10
AMMC-6425-W50
AMMC-6345
DF100
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Ablebond 74-1
Abstract: 12L3 Z0 607 MN 53231 Ablebond 36-2
Text: What H EW LETT f t "KM P A C K A R D 6 -2 0 GHz Amplifier Technical Data HMMC-5618 Features • High Efficiency: 11% @ P.ldB Typical • Output Power, P ldB: 18 dBm Typical • High Gain: 14 dB Typical • F lat Gain Response: ±0.5 dB Typical • Low Input/Output VSWR:
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HMMC-5618
HMMC-5618
Ablebond 74-1
12L3
Z0 607 MN
53231
Ablebond 36-2
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Ablebond 71
Abstract: Ablebond 190
Text: • 2 2 1 HEWLETT' ëSE M PACKARD 23 GHz LNA 21.2-26.5 GHz Technical Data HMMC-5023 Features • Frequency Rajige: 21.2-23.6 GHz and 24.5-26.5 GHz Specified 21-30 GHz Performance • Low Noise Temperature: 226 K (2.5 dB N.F.) Typical • High Gain: 24 dB Typical
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HMMC-5023
HMMC-5023
Ablebond 71
Ablebond 190
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C5023
Abstract: ZQ50A
Text: 1 wrm HEW LETT 1 LEM PA C K A R D 23 GHz LNA 2 1 .2 -2 6 .5 GHz Technical Data HMMC-5023 Features • Frequency Range: 21.2-23.6 GHz and 24.5-26.5 GHz Specified 21-30 GHz Performance • Low Noise Temperature: 226 K (2.5 dB N.F.) Typical • High Gain: 24 dB Typical
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HMMC-5023
HMMC-5023
5965-5448E
C5023
ZQ50A
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Ablebond
Abstract: No abstract text available
Text: 27.5-29.5 Three Stage GBAIpJia MMIC Driver Amplifier AA028P3-00 Features • Single Bias Supply Operation +6V ■ Designed for 27.5-29.5 GHZ LMDS & Digital Radio Bands ■ 19 dB Small Signal Gain Typical at 28 GHz ■ 16 dBm Output Power at 28 GHz (1 dBc)
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AA028P3-00
Ablebond
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41264
Abstract: 58779
Text: 20 -24 G H z G a A s M M IC Pow er Am plifier AA022P1-00 Features Chip Layout • Single Bias Supply Operation +6V ■ Broad Coverage of K -B and ■ 15 dB Small Signal Gain ■ 25.5 dBm Saturated Output Power at 23 G H z ■ 18% Power Added Efficiency at 23 GHz
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AA022P1-00
41264
58779
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Untitled
Abstract: No abstract text available
Text: G E C-MARCONI MTLS LTD 25 3 7 b flS Q l QOOOD71 T • GML • PLESSEY T-3I-Z5 Three Five Product Information GaAs MESFET P35-1101 This New Generation M ESFET has been designed for improved performance and is ideally suited for: ■ J - j& a Applications •
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QOOOD71
P35-1101
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