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    AA 118 DIODE Search Results

    AA 118 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    AA 118 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FBG676

    Abstract: FFG1156
    Text: 7 Series FPGAs Packaging and Pinout Product Specification UG475 v1.9 February 14, 2013 The information disclosed to you hereunder (the "Materials") is provided solely for the selection and use of Xilinx products. To the maximum extent permitted by applicable law: (1) Materials are made available "AS IS" and with all faults, Xilinx hereby DISCLAIMS ALL


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    PDF UG475 FBG676 FFG1156

    xc7k325T

    Abstract: XC7K160T XC7K410T FBG676 FBG484 FFG900 FFG676 UG475 FFG676 xc7k325t XC7K325T specification
    Text: 7 Series FPGAs Packaging and Pinout Advance Specification UG475 v1.0 March 1, 2011 NOTICE: This document contains preliminary information and is subject to change without notice. Information provided herein relates to products and/or services not yet available for sale, and provided solely for information purposes and are not intended, or


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    PDF UG475 xc7k325T XC7K160T XC7K410T FBG676 FBG484 FFG900 FFG676 UG475 FFG676 xc7k325t XC7K325T specification

    MOV 270/20

    Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
    Text: Information Product guide 200 BCcomp Information World wide web New products and highlights Series index Ceramic capacitors Film capacitors Electrolytic capacitors Variable capacitors Linear resistors Non-linear resistors Switches and potentiometers 02/2003


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    PI74ST1G125TEX

    Abstract: No abstract text available
    Text: PI74ST1G125 SOTiny Gate ST Buffer with 3-State Output Features Description • High-speed: tPD = 1.8ns typical The PI74ST1G125 is a buffer with 3-state output that operates over the 1.8V to 3.6V VCC operating range. • Broad operating range: VCC = 1.8V – 3.6V


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    PDF PI74ST1G125 PI74ST1G125 PS8521H PI74ST1G125TX PI74ST1G125TEX PI74ST1G125CX PI74ST1G125CEX

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    diode aa118

    Abstract: aa118 diode AA118 Germanium Diode aa118 germanium point contact diode AA118 Germanium diode STg-50 "Phase Discriminator" Germanium "Point Contact Diode"
    Text: AA 118 Germanium-Spitzendiode Germanium point contact diode Anwendungen: Als Diodenpaar für Phasendiskriminatorschaltungen mit hohen Betriebsspannungen. Applications: M atched pairs for phase discriminator circuits with high supply voltages. Abmessungen in mm


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    PDF AA118 diode aa118 aa118 diode AA118 Germanium Diode aa118 germanium point contact diode AA118 Germanium diode STg-50 "Phase Discriminator" Germanium "Point Contact Diode"

    Germanium diode OA 182

    Abstract: aa 118 diode DIODE AA 119 OA 182 diode Graetz AA119 AA118 diode aa 113 DIODE aaz ring modulator
    Text: Dioden Diodes for demodulator circuits Type Fig. Nr. Maximum ratings at ^ m b Characteristics Notes 2£ °C mA Ä thJA °C/W V 'F mA * Up AA 112 14 15 30 <400 0.95 < 1.5 10 For ratio d e te cto rs w ith low load resistance. M atched pairs are available


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    1N34

    Abstract: SFD112 1N542 2AA113 112-AA AA130 aa116 1N34 diodes 2-AA119 AA118
    Text: y germanium signal diodes diodes de signal au germanium 1H0MS0N-CSF Type VR •o max V ■F* max ImA) vF / max (V) iF IR ImA) max t*A ) tungsten point contact - general purpose 1N34 1N 48 1N 54 A 1N 63 1N 65 1N 81 1N 126 A 1N 127 A 1N 128 1N 198 50 70 50


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    PDF CB-26) 1N542) 1N34 SFD112 1N542 2AA113 112-AA AA130 aa116 1N34 diodes 2-AA119 AA118

    din 7504

    Abstract: DSA 7504 35-04A D0203 A 1712 ds 35-12 e DSA-36W-12 36 L/bbc dsa diodes DSA 1.2
    Text: Rectifier Diodes = 2 - 25 A, Standard Diodes DS. , Avalanche Diodes (DSA.) FAV Type V « -c Pr h U . kW 1.« A •V Package stylo V * See outlines on page 31 I Fig. 8 weiant 0.8 g 10 nw DSA 1-18 D * DSA 1-16 D • DS 1-16 D • DSA 1-14 D • DS 1-14 D


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    PDF 2-14E D0-203 din 7504 DSA 7504 35-04A D0203 A 1712 ds 35-12 e DSA-36W-12 36 L/bbc dsa diodes DSA 1.2

    hpf505

    Abstract: IE 500 MCL SRA-1H hpf 505 hpf-505 mcl sra-3h MCL RAY-3 Funkamateur MCL SRA AA112
    Text: FUNKAMATEUR - Bauelementeinformation Schottky-Einzeldioden und Schottky-Ringm ischer Hinweise Grenzwerte Schottky-Dioden Typ BAT 41 BAT 42 BAT 43 BAT 45 BAT 46 BAT 47 BAT 48 BAT 85 BAT 86 MB R 745 MSP 145 MS 106 MS 109 MS 305 MS 306 MS 309 MS 505 MS 506 MS 509


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    PDF DO-201 HPF505 IE 500 MCL SRA-1H hpf 505 hpf-505 mcl sra-3h MCL RAY-3 Funkamateur MCL SRA AA112

    germanium diodes

    Abstract: AA118 aa132 1N126 1N126A 1N128 AA131 1N933 1N198 1n34
    Text: Tungsten point contact germanium diodes • General purpose Diodes de signal au germanium à pointe tungstène - Usage généraI Type Case B oîtie r VR V *0 iF * VF max (mA) max / ,v // *R (*xA> lF (mA) Tam b 25 »C / / / •r (mA) / max Vr (V) max Vr (V)


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    diode avalanche DSA

    Abstract: diode avalanche DSA 42 diode avalanche DSA 25 8 diodes DSA 6 A 1712 25-16AT 2X17 10-32-UNF-2A
    Text: Rectifier Diodes lFAV = 2 - 45 A, Standard Diodes DS. , Avalanche Diodes (DSA.) Type ^RR M *FAV V 100°C A 2.3 p ^FRMS 1-12 D 1200 DSA 1-12 D DSA 1-16 D DSA 1-18 D DS 1200 1600 1800 DS DS 2-08 A 2-12 A 800 1200 DSA 2-12 A DSA 2-16 A DSA 2-18 A 1200 1600


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    PDF O-220AB O-220 O-268 ISOPLUS220TM 10-32UNF2A diode avalanche DSA diode avalanche DSA 42 diode avalanche DSA 25 8 diodes DSA 6 A 1712 25-16AT 2X17 10-32-UNF-2A

    aa 118 diode

    Abstract: 05nm5
    Text: 2 / a y h + y j y a - K U 7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S60SC6M Unit • mm Package I MTO-3P -, ^+0.5 lo-o.i 4>33±0-2 n-^bgÖT? #i| Date code 60V 60A • V aa%j Type No. » Polarity • T jl5 0 ° C • Prrsm 77 5.0 ±0-3


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    PDF S60SC6M J515-5 aa 118 diode 05nm5

    MC1117

    Abstract: MC1116 IVI01118 IVIC1116 IVIC111IV1C111T IVIC111S 100KC ScansUX1007 MC1118
    Text: MOTOROLA B O X 9 5 5 • P H O E N I X 1. IV IC 11 1 6 A R I Z O N A IV IC 1 1 1 8 MULTI-DIODE GATES fo r COMPUTER MEMORY APPLICATIONS SILICON INTEGRATED CIRCUIT MEMORY DIODES • M e d iu m C u r r e n t R ange lF= 3 0 0 m A d c • H ig h -S p e e d R e c o v e ry T im e


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    PDF IVIC1116 MC1116 MC1117 MC1118 300mAdc, 60mAdc, IVIC111S IVIC111IV1C111T, IVI01118 1-MC1116 MC1117 MC1116 IVIC111IV1C111T 100KC ScansUX1007 MC1118

    ds 35-12 e

    Abstract: 4508A DSA117-16 dsai17-12a DSAI11016F A 3150 V DSAI110
    Text: Rectifier Diodes 'FA V = 2 - 77 A, Standard Diodes DS. , Avalanche Diodes (DSA.) Type FAV FSM T =100°C 45°C 10 ms New DS 1-12 D DSA 1-12 D DSA 1-16 D DSA 1-18 D DS 2-08 A DS 2-12 A DSA 2-12 A DSA 2-16 A DSA 2-18 A DSP 8-08 A DSP 8-12 A DSP 8-08 AS OSP 8-12 AS


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    PDF DSAI17-12 DSA117-16 OSAI35-12 DSAI35-16 DSAI35-18 ASAI75-18B D0-205AC D0-30) DSAI110-12 DSAI110-16 ds 35-12 e 4508A dsai17-12a DSAI11016F A 3150 V DSAI110

    OL391N-03

    Abstract: OL392N-03
    Text: O K I electronic com ponents QL392N-03, QL3492N-03 1.3 im Low-Power Laser-Diode Coaxial Module GENERAL DESCRIPTION The OL392N-Ü3 and OL3492N-03 are 1.3 (un, M Q W InG aA sP/ InP laser-diode coaxial m odules w ith single-m ode fiber pigtails. These m odules are optim al light sources for optical subscriber loops and


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    PDF QL392N-03, QL3492N-03 OL392N-CB b7H4H40 OL391N-03, OL3492N-Q3 OL392N-03 b7242HD 0G22512 OL391N-03 OL392N-03

    Untitled

    Abstract: No abstract text available
    Text: Central CMPD5001 CMPD5001S TM Sem i c o n d u c t o r C o r p . HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designedforsw itching inductive load


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    PDF CMPD5001 CMPD5001S OT-23 CMPD5001S 100mA 200mA 400mA CMPD5001

    G 50N60

    Abstract: 50N60 igbt 100a 50n50 IXGH50N60B
    Text: HiPerFAST IGBT with Diode V V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C 2 5 500 V 75 A 600 V 75 A ^ C E s a t 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 vCES V C GR VGES VGEM 'c o ' cm 50N60 Tj = 25°C to 150°C


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    PDF 50N50BU1 50N60BU1 100ns 120ns 50N50 50N60 O-264 G 50N60 igbt 100a IXGH50N60B

    L9 Zener

    Abstract: ST03D 65 ST03D-82 U180 sa marking axial diode ZD 8.2V
    Text: Power-Clamper Axial Device Zener Diodes with Fast Recovery Diode • ftM U ! OUTLINE ST03D-82 Unit: mm Weight 0.65 f Package : AX 10 82V 300W « i t 26.5 26.5 <j>AA Feature ■ Power Zener Diodes with FRD ■ Axial Package ■ Application for snubber circuit


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    PDF ST03D-82 100kHz waveii50HzT-aiJÂ L9 Zener ST03D 65 ST03D-82 U180 sa marking axial diode ZD 8.2V

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HiPerFAST IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C25 500 V 75 A 600 V 75 A V CE sat tfi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Maximum Ratings Test Conditions 50N50 V V CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i


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    PDF 50N50BU1 50N60BU1 100ns 120ns 50N50 50N60 IXGK50N50BU1 IXGK50N60BU1

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    diode avalanche DSA 2-16a

    Abstract: diode avalanche DSA diode avalanche DSA 1-14 DSA 22-12 A diode avalanche DSA 17-14 A diode avalanche DSA 25 8
    Text: A S E A BRO WN/ABB SEMICON 03 D I 00MÖ3DÖ □ □ □ □ ! £ ? I T - o I- ot SE2HHS£tu7"^ Netzdioden Rectifier diodes Diode Vrrm IpRMS Ifavi os DSA Typ/type DS DS DS DS DS 1-04 1-08 1-12 1-14 1-16 f DSI DS 1,2-04 E DS 1,2-08 E DS 1,2-12 E DS 1,2-14 E


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    Untitled

    Abstract: No abstract text available
    Text: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20


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    PDF 50N60AU1 O-264

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


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    PDF 76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram