FBG676
Abstract: FFG1156
Text: 7 Series FPGAs Packaging and Pinout Product Specification UG475 v1.9 February 14, 2013 The information disclosed to you hereunder (the "Materials") is provided solely for the selection and use of Xilinx products. To the maximum extent permitted by applicable law: (1) Materials are made available "AS IS" and with all faults, Xilinx hereby DISCLAIMS ALL
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UG475
FBG676
FFG1156
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xc7k325T
Abstract: XC7K160T XC7K410T FBG676 FBG484 FFG900 FFG676 UG475 FFG676 xc7k325t XC7K325T specification
Text: 7 Series FPGAs Packaging and Pinout Advance Specification UG475 v1.0 March 1, 2011 NOTICE: This document contains preliminary information and is subject to change without notice. Information provided herein relates to products and/or services not yet available for sale, and provided solely for information purposes and are not intended, or
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UG475
xc7k325T
XC7K160T
XC7K410T
FBG676
FBG484
FFG900
FFG676
UG475
FFG676 xc7k325t
XC7K325T specification
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MOV 270/20
Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
Text: Information Product guide 200 BCcomp Information World wide web New products and highlights Series index Ceramic capacitors Film capacitors Electrolytic capacitors Variable capacitors Linear resistors Non-linear resistors Switches and potentiometers 02/2003
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PI74ST1G125TEX
Abstract: No abstract text available
Text: PI74ST1G125 SOTiny Gate ST Buffer with 3-State Output Features Description • High-speed: tPD = 1.8ns typical The PI74ST1G125 is a buffer with 3-state output that operates over the 1.8V to 3.6V VCC operating range. • Broad operating range: VCC = 1.8V – 3.6V
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PI74ST1G125
PI74ST1G125
PS8521H
PI74ST1G125TX
PI74ST1G125TEX
PI74ST1G125CX
PI74ST1G125CEX
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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diode aa118
Abstract: aa118 diode AA118 Germanium Diode aa118 germanium point contact diode AA118 Germanium diode STg-50 "Phase Discriminator" Germanium "Point Contact Diode"
Text: AA 118 Germanium-Spitzendiode Germanium point contact diode Anwendungen: Als Diodenpaar für Phasendiskriminatorschaltungen mit hohen Betriebsspannungen. Applications: M atched pairs for phase discriminator circuits with high supply voltages. Abmessungen in mm
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AA118
diode aa118
aa118 diode
AA118
Germanium Diode aa118
germanium point contact diode
AA118 Germanium diode
STg-50
"Phase Discriminator"
Germanium
"Point Contact Diode"
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Germanium diode OA 182
Abstract: aa 118 diode DIODE AA 119 OA 182 diode Graetz AA119 AA118 diode aa 113 DIODE aaz ring modulator
Text: Dioden Diodes for demodulator circuits Type Fig. Nr. Maximum ratings at ^ m b Characteristics Notes 2£ °C mA Ä thJA °C/W V 'F mA * Up AA 112 14 15 30 <400 0.95 < 1.5 10 For ratio d e te cto rs w ith low load resistance. M atched pairs are available
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1N34
Abstract: SFD112 1N542 2AA113 112-AA AA130 aa116 1N34 diodes 2-AA119 AA118
Text: y germanium signal diodes diodes de signal au germanium 1H0MS0N-CSF Type VR •o max V ■F* max ImA) vF / max (V) iF IR ImA) max t*A ) tungsten point contact - general purpose 1N34 1N 48 1N 54 A 1N 63 1N 65 1N 81 1N 126 A 1N 127 A 1N 128 1N 198 50 70 50
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CB-26)
1N542)
1N34
SFD112
1N542
2AA113
112-AA
AA130
aa116
1N34 diodes
2-AA119
AA118
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din 7504
Abstract: DSA 7504 35-04A D0203 A 1712 ds 35-12 e DSA-36W-12 36 L/bbc dsa diodes DSA 1.2
Text: Rectifier Diodes = 2 - 25 A, Standard Diodes DS. , Avalanche Diodes (DSA.) FAV Type V « -c Pr h U . kW 1.« A •V Package stylo V * See outlines on page 31 I Fig. 8 weiant 0.8 g 10 nw DSA 1-18 D * DSA 1-16 D • DS 1-16 D • DSA 1-14 D • DS 1-14 D
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2-14E
D0-203
din 7504
DSA 7504
35-04A
D0203
A 1712
ds 35-12 e
DSA-36W-12 36
L/bbc dsa diodes DSA 1.2
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hpf505
Abstract: IE 500 MCL SRA-1H hpf 505 hpf-505 mcl sra-3h MCL RAY-3 Funkamateur MCL SRA AA112
Text: FUNKAMATEUR - Bauelementeinformation Schottky-Einzeldioden und Schottky-Ringm ischer Hinweise Grenzwerte Schottky-Dioden Typ BAT 41 BAT 42 BAT 43 BAT 45 BAT 46 BAT 47 BAT 48 BAT 85 BAT 86 MB R 745 MSP 145 MS 106 MS 109 MS 305 MS 306 MS 309 MS 505 MS 506 MS 509
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DO-201
HPF505
IE 500
MCL SRA-1H
hpf 505
hpf-505
mcl sra-3h
MCL RAY-3
Funkamateur
MCL SRA
AA112
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germanium diodes
Abstract: AA118 aa132 1N126 1N126A 1N128 AA131 1N933 1N198 1n34
Text: Tungsten point contact germanium diodes • General purpose Diodes de signal au germanium à pointe tungstène - Usage généraI Type Case B oîtie r VR V *0 iF * VF max (mA) max / ,v // *R (*xA> lF (mA) Tam b 25 »C / / / •r (mA) / max Vr (V) max Vr (V)
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diode avalanche DSA
Abstract: diode avalanche DSA 42 diode avalanche DSA 25 8 diodes DSA 6 A 1712 25-16AT 2X17 10-32-UNF-2A
Text: Rectifier Diodes lFAV = 2 - 45 A, Standard Diodes DS. , Avalanche Diodes (DSA.) Type ^RR M *FAV V 100°C A 2.3 p ^FRMS 1-12 D 1200 DSA 1-12 D DSA 1-16 D DSA 1-18 D DS 1200 1600 1800 DS DS 2-08 A 2-12 A 800 1200 DSA 2-12 A DSA 2-16 A DSA 2-18 A 1200 1600
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O-220AB
O-220
O-268
ISOPLUS220TM
10-32UNF2A
diode avalanche DSA
diode avalanche DSA 42
diode avalanche DSA 25 8
diodes DSA 6
A 1712
25-16AT
2X17
10-32-UNF-2A
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aa 118 diode
Abstract: 05nm5
Text: 2 / a y h + y j y a - K U 7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S60SC6M Unit • mm Package I MTO-3P -, ^+0.5 lo-o.i 4>33±0-2 n-^bgÖT? #i| Date code 60V 60A • V aa%j Type No. » Polarity • T jl5 0 ° C • Prrsm 77 5.0 ±0-3
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S60SC6M
J515-5
aa 118 diode
05nm5
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MC1117
Abstract: MC1116 IVI01118 IVIC1116 IVIC111IV1C111T IVIC111S 100KC ScansUX1007 MC1118
Text: MOTOROLA B O X 9 5 5 • P H O E N I X 1. IV IC 11 1 6 A R I Z O N A IV IC 1 1 1 8 MULTI-DIODE GATES fo r COMPUTER MEMORY APPLICATIONS SILICON INTEGRATED CIRCUIT MEMORY DIODES • M e d iu m C u r r e n t R ange lF= 3 0 0 m A d c • H ig h -S p e e d R e c o v e ry T im e
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IVIC1116
MC1116
MC1117
MC1118
300mAdc,
60mAdc,
IVIC111S
IVIC111IV1C111T,
IVI01118
1-MC1116
MC1117
MC1116
IVIC111IV1C111T
100KC
ScansUX1007
MC1118
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ds 35-12 e
Abstract: 4508A DSA117-16 dsai17-12a DSAI11016F A 3150 V DSAI110
Text: Rectifier Diodes 'FA V = 2 - 77 A, Standard Diodes DS. , Avalanche Diodes (DSA.) Type FAV FSM T =100°C 45°C 10 ms New DS 1-12 D DSA 1-12 D DSA 1-16 D DSA 1-18 D DS 2-08 A DS 2-12 A DSA 2-12 A DSA 2-16 A DSA 2-18 A DSP 8-08 A DSP 8-12 A DSP 8-08 AS OSP 8-12 AS
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DSAI17-12
DSA117-16
OSAI35-12
DSAI35-16
DSAI35-18
ASAI75-18B
D0-205AC
D0-30)
DSAI110-12
DSAI110-16
ds 35-12 e
4508A
dsai17-12a
DSAI11016F
A 3150 V
DSAI110
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OL391N-03
Abstract: OL392N-03
Text: O K I electronic com ponents QL392N-03, QL3492N-03 1.3 im Low-Power Laser-Diode Coaxial Module GENERAL DESCRIPTION The OL392N-Ü3 and OL3492N-03 are 1.3 (un, M Q W InG aA sP/ InP laser-diode coaxial m odules w ith single-m ode fiber pigtails. These m odules are optim al light sources for optical subscriber loops and
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QL392N-03,
QL3492N-03
OL392N-CB
b7H4H40
OL391N-03,
OL3492N-Q3
OL392N-03
b7242HD
0G22512
OL391N-03
OL392N-03
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Untitled
Abstract: No abstract text available
Text: Central CMPD5001 CMPD5001S TM Sem i c o n d u c t o r C o r p . HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designedforsw itching inductive load
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CMPD5001
CMPD5001S
OT-23
CMPD5001S
100mA
200mA
400mA
CMPD5001
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G 50N60
Abstract: 50N60 igbt 100a 50n50 IXGH50N60B
Text: HiPerFAST IGBT with Diode V V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C 2 5 500 V 75 A 600 V 75 A ^ C E s a t 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 vCES V C GR VGES VGEM 'c o ' cm 50N60 Tj = 25°C to 150°C
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50N50BU1
50N60BU1
100ns
120ns
50N50
50N60
O-264
G 50N60
igbt 100a
IXGH50N60B
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L9 Zener
Abstract: ST03D 65 ST03D-82 U180 sa marking axial diode ZD 8.2V
Text: Power-Clamper Axial Device Zener Diodes with Fast Recovery Diode • ftM U ! OUTLINE ST03D-82 Unit: mm Weight 0.65 f Package : AX 10 82V 300W « i t 26.5 26.5 <j>AA Feature ■ Power Zener Diodes with FRD ■ Axial Package ■ Application for snubber circuit
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ST03D-82
100kHz
waveii50HzT-aiJÂ
L9 Zener
ST03D 65
ST03D-82
U180
sa marking axial diode
ZD 8.2V
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Untitled
Abstract: No abstract text available
Text: □ IXYS HiPerFAST IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C25 500 V 75 A 600 V 75 A V CE sat tfi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Maximum Ratings Test Conditions 50N50 V V CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i
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50N50BU1
50N60BU1
100ns
120ns
50N50
50N60
IXGK50N50BU1
IXGK50N60BU1
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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diode avalanche DSA 2-16a
Abstract: diode avalanche DSA diode avalanche DSA 1-14 DSA 22-12 A diode avalanche DSA 17-14 A diode avalanche DSA 25 8
Text: A S E A BRO WN/ABB SEMICON 03 D I 00MÖ3DÖ □ □ □ □ ! £ ? I T - o I- ot SE2HHS£tu7"^ Netzdioden Rectifier diodes Diode Vrrm IpRMS Ifavi os DSA Typ/type DS DS DS DS DS 1-04 1-08 1-12 1-14 1-16 f DSI DS 1,2-04 E DS 1,2-08 E DS 1,2-12 E DS 1,2-14 E
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Untitled
Abstract: No abstract text available
Text: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20
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50N60AU1
O-264
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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