SN74F1016
Abstract: 36INCH
Text: SN74F1016 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS093 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for
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SN74F1016
16-BIT
SDFS093
SN74F1016
36INCH
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DIODE A16
Abstract: A7 diode schottky SN74F1016
Text: SN74F1016 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS093 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for
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SN74F1016
16-BIT
SDFS093
DIODE A16
A7 diode schottky
SN74F1016
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SN74F1018
Abstract: No abstract text available
Text: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for
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SN74F1018
18-BIT
SDFS094
SN74F1018
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patents integrated SRAMS in 1993
Abstract: S1 DIODE schottky SN74F1018 DIODE A16 DIODE a5 A7 diode schottky
Text: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for
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SN74F1018
18-BIT
SDFS094
patents integrated SRAMS in 1993
S1 DIODE schottky
SN74F1018
DIODE A16
DIODE a5
A7 diode schottky
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74ls795
Abstract: 81LS95 74LS796 74LS798 81LS98 LS795 SN54/74LS797
Text: SN54/74LS795 SN54/74LS796 SN54/74LS797 SN54/74LS798 TRI-STATE OCTAL BUFFERS The SN54 / 74LS795 thru SN54 / 74LS798 device types provide a second source for the 71 / 81LS95 thru 71 / 81LS98 series. These devices are octal low power Schottky versions of the 70/8095 thru 70/8098 3-STATE Hex
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SN54/74LS795
SN54/74LS796
SN54/74LS797
SN54/74LS798
74LS795
74LS798
81LS95
81LS98
LS795
LS797
74LS796
SN54/74LS797
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SN74F1018
Abstract: No abstract text available
Text: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for
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SN74F1018
18-BIT
SDFS094
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SN74F1018
Abstract: No abstract text available
Text: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for
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SN74F1018
18-BIT
SDFS094
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SN74F1018
Abstract: No abstract text available
Text: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for
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SN74F1018
18-BIT
SDFS094
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SN74F1016DWRE4
Abstract: SN74F1016 SN74F1016DW SN74F1016DWE4 SN74F1016DWR
Text: SN74F1016 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS093 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for
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SN74F1016
16-BIT
SDFS093
SN74F1016DWRE4
SN74F1016
SN74F1016DW
SN74F1016DWE4
SN74F1016DWR
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Untitled
Abstract: No abstract text available
Text: SN74F1016 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS093 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for
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SN74F1016
16-BIT
SDFS093
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Untitled
Abstract: No abstract text available
Text: SN74F1016 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS093 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for
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SN74F1016
16-BIT
SDFS093
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Untitled
Abstract: No abstract text available
Text: SN74F1016 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS093 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for
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SN74F1016
16-BIT
SDFS093
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MC74VHC245 Octal Bus Transceiver The MC74VHC245 is an advanced high speed CMOS octal bus transceiver fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC245
MC74VHC245
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SN74F1018
Abstract: No abstract text available
Text: SN74F1018 18ĆBIT SCHOTTKY BARRIER DIODE RĆC BUSĆTERMINATION ARRAY SDFS094 − NOVEMBER 1992 − REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for
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SN74F1018
SDFS094
18-Bit
SN74F1018
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SN74F1018
Abstract: No abstract text available
Text: SN74F1018 18ĆBIT SCHOTTKY BARRIER DIODE RĆC BUSĆTERMINATION ARRAY SDFS094 − NOVEMBER 1992 − REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for
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SN74F1018
18BIT
SDFS094
18-Bit
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SN74F1018
Abstract: No abstract text available
Text: SN74F1018 18ĆBIT SCHOTTKY BARRIER DIODE RĆC BUSĆTERMINATION ARRAY SDFS094 − NOVEMBER 1992 − REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for
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SN74F1018
18BIT
SDFS094
18-Bit
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Untitled
Abstract: No abstract text available
Text: SN74F1016 16ĆBIT SCHOTTKY BARRIER DIODE RĆC BUSĆTERMINATION ARRAY SDFS093 − NOVEMBER 1992 − REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for
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SN74F1016
16BIT
SDFS093
16-Bit
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SN74F1018
Abstract: No abstract text available
Text: SN74F1018 18ĆBIT SCHOTTKY BARRIER DIODE RĆC BUSĆTERMINATION ARRAY SDFS094 − NOVEMBER 1992 − REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for
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SN74F1018
18BIT
SDFS094
18-Bit
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A7 diode schottky
Abstract: SHINDENGEN DIODE
Text: Surface Mounting Device •>a7 h * / \ ' ' J 7 2 V * - K Schottky Barrier Diode _ Single Diode OUTLINE DIMENSIONS DE3S6M 60V 3A •S M D • T j 15 0 r , •P 7 /f7 > ÿ iS li hhsm •S R B S • D C /D C n V A '- ^ •*S , y -A . OAMÜ • a « . Mfctem
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A7 diode schottky
Abstract: switching diode 16 array
Text: SN74F1016 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY S D FS 093 - N O V EM BE R 1992 - R EVISED DE CE M B E R 1993 • ■ I I | • Designed to Reduce Reflection Noise • Repetitive Peak Forward Current. . . 300 mA • 16-Bit Array Structure Suited for
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SN74F1016
16-BIT
SDFS093
A7 diode schottky
switching diode 16 array
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MDA2501
Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Text: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090
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1N5817
1N5618
1N5818
1N5819
1N5820
1N5821
MDA2501
pbl302
g1756
g1756 Diode
MDA2502
MDA970A6
MDA3510
MDA2500
MDA3502 Bridge rectifier
mda970a1
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74ls795
Abstract: 74LS796 74ls797
Text: M MOTOROLA SN54/74LS795 SN54/74LS796 SN54/74LS797 SN54/74LS798 TRI-STATE OCTAL BUFFERS The S N 54/74LS 795 thru S N 54/74LS 798 device types provide a second source for the 71 /8 1 LS95 thru 7 1 /8 1 LS98 series. These devices are octal low power Schottky versions of the 70/8095 thru 70/8098 3-STATE Hex
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OCR Scan
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54/74LS
LS795
LS797
LS796
LS798
LS798,
74ls795
74LS796
74ls797
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D180SC3M
Abstract: diode LT
Text: n iJ 7 s r -fT i-— K Schottky Barrier Diode Rectifier Module • O U T L IN E D180SC3M D IM E N S IO N S 3 -M 4 nuts 30V 180 A Ü18 Q S C 3 M U n it i mm ■ Æ fê ü R A T IN G S A b s o lu te M axim um R a tin g s IS B Item Operating Junction Temperature
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D180SC3M
100ns,
l/100
D180SC3M
diode LT
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S25SC6M
Abstract: No abstract text available
Text: vom sr-r*—K J V J -F Schottky Barrier Diode Twin Diode • O U T L IN E D IM E N S IO N S S25SC6M 60V 25A ■ fctëm R A T IN G S Absolute Maximum Ratings ~ ~ If s bE ^ S to ra g e Tem perature o i i l - — Conditions f it Unit 60 V 65 V 25 A 300 A V rm
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S25SC6M
S25SC6M
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