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    A64 MARKING CODE Search Results

    A64 MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    A64 MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: POWER TYPE 金屬皮膜固定電阻器 RNU FIXED METAL FILM RESISTOR Standard Type 小型金屬皮膜固定電阻器 RNS FIXED METAL FILM RESISTOR (Small Type) •結構圖 Construction 1 端 2 瓷 棒 Ceramic base S1/2W Dark blue ；others Light blue, 3


    Original     		PDF than100

    Untitled

    Abstract: No abstract text available
    Text: POWER TYPE 氧化金屬膜電阻器 RSU METAL OXIDE FILM RESISTOR Standard Type 小型氧化金屬膜電阻器 RSS METAL OXIDE FILM RESISTOR (Small Type 超小型氧化金屬膜電阻器 RSP METAL OXIDE FILM RESISTOR (Super Small Type) •結構圖 Construction


    Original     		PDF 30min) than100â

    Untitled

    Abstract: No abstract text available
    Text: POWER TYPE RSU 氧化金屬膜電阻器 RSS 小型氧化金屬膜電阻器 RSP 超小型氧化金屬膜電阻器 METAL OXIDE FILM RESISTOR Standard Type METAL OXIDE FILM RESISTOR (Small Type) METAL OXIDE FILM RESISTOR (Super Small Type) •結構圖 Construction


    Original     		PDF 30min) than100Î

    Untitled

    Abstract: No abstract text available
    Text: DISCHARGE PATH RESISTOR RMU 金屬釉電阻器 RMS 小型金屬釉電阻器 RMH 大型金屬釉電阻器 METAL GLAZE RESISTOR Standard Type METAL GLAZE RESISTOR (Small Type) METAL GLAZE RESISTOR (Large-scale Type) •結構圖 Construction 塗裝顏色： Coating Color


    Original     		PDF

    A64Z

    Abstract: SGA-6489 SGA-6489 A64Z MARKING A64 SOT-89 sga6489 a64 marking code 5.1 amplifier schematic A64 marking amplifier marking A64 SGA6489Z
    Text: SGA-6489 Z SGA-6489(Z) Low Noise, High Gain SiGe HBT DC to 3500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SGA-6489 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and


    Original     		PDF SGA-6489 3500MHz, OT-89 SGA6489 SGA6489Z SGA-6489 SGA-6489Z A64Z SGA-6489 A64Z MARKING A64 SOT-89 a64 marking code 5.1 amplifier schematic A64 marking amplifier marking A64

    Untitled

    Abstract: No abstract text available
    Text: SGA-6489 Z SGA-6489(Z) Low Noise, High Gain SiGe HBT DC to 3500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features The SGA-6489 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and


    Original     		PDF SGA-6489 3500MHz, OT-89 SGA6489 SGA6489Z SGA-6489 SGA-6489Z

    Device marking code B12 B13 B14 B15 B16

    Abstract: MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B
    Text: 32MB SO-RIMMTM Module with 128/144 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC


    Original     		PDF 128Mb 144Mb HS032N02E HS032N02D HS032N02C HS032N02B HS032E02E HS032E02D HS032E02C HS032E02B Device marking code B12 B13 B14 B15 B16 MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B

    marking code B49

    Abstract: MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking
    Text: 256MB SO-RIMMTM Module with 256/288 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 256Mb / 288Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC


    Original     		PDF 256MB 288Mb HS256N08E HS256N08D HS256N08C HS256N08B HS256E08E HS256E08D HS256E08C marking code B49 MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking

    Untitled

    Abstract: No abstract text available
    Text: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V


    Original     		PDF MS18R3266AH0 288Mbit 32Mx18) 576Mb 32K/32ms

    MARKING CODE B82

    Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
    Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0


    Original     		PDF MR18R162WAG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms MARKING CODE B82 a87 marking Marking b66 marking a86 MARKING B83 marking a75

    a80 marking code

    Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
    Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR18R162WDG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms a80 marking code MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84

    a74 marking code

    Abstract: MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode
    Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR18R162WDG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms a74 marking code MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode

    HYR163249G-653

    Abstract: HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON
    Text: HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,


    Original     		PDF HYR16xx49G 128MB 128MB, HYR163249G-653 HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON

    b41 Marking

    Abstract: No abstract text available
    Text: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR18R162WEG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms b41 Marking

    transistor marking A21

    Abstract: a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48
    Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RDRAMs RIMM Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Datasheet * eliminate "Target" etc. Page 0 Version 1.1 July. 2002


    Original     		PDF MR18R162WAG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms transistor marking A21 a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48

    A74 marking

    Abstract: a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38
    Text: MS18R3266AH0 Preliminary Revision History Version 0.1 November 2003 - Preliminary - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Nov. 2003 MS18R3266AH0 Preliminary (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V


    Original     		PDF MS18R3266AH0 288Mbit 32Mx18) 576Mb 32K/32ms A74 marking a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38

    Untitled

    Abstract: No abstract text available
    Text: OPA381 OPA2381 SBOS313B − AUGUST 2004 − REVISED NOVEMBER 2004 Precision, Low Power, 18MHz Transimpedance Amplifier FEATURES DESCRIPTION D OVER 250kHz TRANSIMPEDANCE D D D D D D D D D D D D The OPA381 family of transimpedance amplifiers provides 18MHz of Gain Bandwidth GBW , with extremely high


    Original     		PDF OPA381 OPA2381 SBOS313B 18MHz 250kHz OPA381 18MHz 10nV/â

    a80 marking code

    Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
    Text: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR16R0828ER 128Mb 8Mx16) 16K/32ms a80 marking code marking A32 marking A86 marking code B38 samsung electronics logo

    Untitled

    Abstract: No abstract text available
    Text: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. - Add 1066MHz-35 binning


    Original     		PDF MS18R1622 256/288Mbit 1066MHz-35 16Mx18) 288Mb 16K/32ms

    marking B44

    Abstract: DH0 165
    Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(/4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


    Original     		PDF MS18R1622 256/288Mbit 16Mx18) 288Mb 16K/32ms marking B44 DH0 165

    Untitled

    Abstract: No abstract text available
    Text: MR16R0828DR T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb B-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828DR(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb D-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR16R0828DR 128Mb 8Mx16) 16K/32ms

    a74 marking code

    Abstract: A37 diode marking .A55 transistor marking A21 256-288 MBit Direct RDRAM MS18R1622AH0-CK8 MS18R1624AH0-CK8 a92 614
    Text: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver.(August 2001) 256/288Mbit A-die RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver.(December 2001) 288Mbit A-die SO-RIMM Datasheet. - Add 1066MHz-35 binning


    Original     		PDF MS18R1622 256/288Mbit 288Mbit 1066MHz-35 16Mx18) 288Mb 16K/32ms a74 marking code A37 diode marking .A55 transistor marking A21 256-288 MBit Direct RDRAM MS18R1622AH0-CK8 MS18R1624AH0-CK8 a92 614

    Untitled

    Abstract: No abstract text available
    Text: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver.(August 2001) 256/288Mbit A-die RIMM Module Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver.(December 2001) 288Mbit A-die SO-RIMM Module Datasheet.


    Original     		PDF MS18R1622 256/288Mbit 288Mbit 1066MHz-35 16Mx18) 288Mb 16K/32ms

    a80 marking code

    Abstract: a64 marking code B58 608 diode 910 b34 MS18R1622EH0-CM8 MS18R1622EH0-CT9 MS18R1624EH0-CM8 MS18R1624EH0-CT9 MS18R1628EH0-CT9 MS18R1622EH0-CK8
    Text: Preliminary MS18R1622 4/8 EH0 Revision History Version 0.1 (February 2004) - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Feb. 2004 Preliminary MS18R1622(4/8)EH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb E-die, 32s banks,16K/32ms Refresh, 2.5V


    Original     		PDF MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms a80 marking code a64 marking code B58 608 diode 910 b34 MS18R1622EH0-CM8 MS18R1622EH0-CT9 MS18R1624EH0-CM8 MS18R1624EH0-CT9 MS18R1628EH0-CT9 MS18R1622EH0-CK8