TRANSISTOR A63
Abstract: No abstract text available
Text: Cascadable Amplifier 5 to 1000 MHz A63/ SMA63 V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) • HIGH GAIN: 16 dB (TYP.) Description The A63 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance
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SMA63
MIL-STD-883
SMA63
TRANSISTOR A63
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TRANSISTOR A63
Abstract: a63 TRANSISTOR SMA63 CA63
Text: A63 / SMA63 Cascadable Amplifier 5 to 1000 MHz Rev. V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) • HIGH GAIN: 16 dB (TYP.) Description The A63 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance
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SMA63
MIL-STD-883
TRANSISTOR A63
a63 TRANSISTOR
SMA63
CA63
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Untitled
Abstract: No abstract text available
Text: A63/SMA63 5 TO 1000 MHz CASCADABLE AMPLIFIER • LOW NOISE: 3.0 dB TYP. · MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) · HIGH GAIN: 16 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 12/00)* Characteristics Typical Frequency Small Signal Gain (min.)
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A63/SMA63
SMA63
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TRANSISTOR A63
Abstract: SMA63 diode a63 CA63 a63 TRANSISTOR
Text: A63/SMA63 5 TO 1000 MHz CASCADABLE AMPLIFIER • LOW NOISE: 3.0 dB TYP. · MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) · HIGH GAIN: 16 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 12/00)* Characteristics Typical Frequency Small Signal Gain (min.)
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A63/SMA63
SMA63
TRANSISTOR A63
SMA63
diode a63
CA63
a63 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: Product Description Stanford Microdevices SGA-6386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-6386
EDS-100614
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A6331
Abstract: No abstract text available
Text: Product Description Stanford Microdevices SGA-6389 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-6389
SGA-6389
DC-4500
EDS-100620
A6331
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TRANSISTOR A63
Abstract: 5894 A63 marking amplifier DC-3000 SGA-6386
Text: Product Description Stanford Microdevices SGA-6386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-6386
SGA-6386
DC-3000
EDS-100614
TRANSISTOR A63
5894
A63 marking amplifier
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TRANSISTOR A63
Abstract: EDS-100620 SGA-6389 a63 TRANSISTOR
Text: Product Description Stanford Microdevices SGA-6389 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-6389
SGA-6389
DC-4000
EDS-100620
TRANSISTOR A63
a63 TRANSISTOR
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philips 3h1 ferrite material
Abstract: ferroxcube handbook old ferrite ferroxcube Ee core 3H1 ferroxcube philips ferroxcube 4c65 ferroxcube 3E1 3h1 ferrite material philips 3f3 ferrite philips 3f3 ferrite toroid philips p14/8 3h1
Text: PRODUCT SELECTION GUIDE 2001 A Y AG E O C O M PA N Y List of contents page This Selection Guide offers an overview of the product ranges made by FERROXCUBE It contains short-form data for quick selection by development engineers and offers an overview for
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Selection Guide
Abstract: FERROXCUBE ferroxcube 31 toroid core SP 5001 IC INVERTER inverter ccfl SP 5001 IC INVERTER ferroxcube handbook old ferrite philips etd34 ferrite part number Rod 3B1 smooth l 7251 3.1 etd29 14 pin vertical bobbins
Text: PRODUCT SELECTION GUIDE 2003 A Y A G E O C O M P A N Y List of contents List of contents continued page page General introduction Application matrix 2 8 Power conversion and Signal processing Materials and applications Bobbins and accessories Integrated Inductive Components (IIC)
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EDS-100620
Abstract: No abstract text available
Text: Preliminary Product Description SGA-6389 Stanford Microdevices’ SGA-6389 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to
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SGA-6389
50-ohm
SGA-6389
DC-4000
EDS-100620
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TRANSISTOR A63
Abstract: sot23 A63 a63 TRANSISTOR MPSA63 MMBTA63 MPSA64 PZTA63
Text: MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.
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MPSA63
MMBTA63
PZTA63
OT-23
OT-223
MPSA64
MPSA63
MMBTA63
TRANSISTOR A63
sot23 A63
a63 TRANSISTOR
PZTA63
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a42e
Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
Text: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless
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OD-923
OT-923
OT-953
OD-523
OT-523
OT-563
OD-323
OT-323
OT-363
OD-123
a42e
IC 7410
sot-89 A63
CZT900K
npn 2907A
2222a
A77 SOT23
2222ae
A92E
3906 npn
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MPSA63
Abstract: TRANSISTOR A63 MMBTA63 MPSA64 PZTA63 Transistor MPSA63
Text: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MMBTA63
PZTA63
OT-23
OT-223
MPSA64
MPSA63
TRANSISTOR A63
MMBTA63
PZTA63
Transistor MPSA63
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TRANSISTOR A63
Abstract: No abstract text available
Text: WJ-A63/SMA63 5 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.0 dB TYP. MEDIUM THIRD ORDER I.R: +15 dBm (TYR) HIGH GAIN: 16 dB (TYP.) Specifications* Outline Drawings A63 0.460 r , (11.41) Guaranteed Typical
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WJ-A63/SMA63
50-ohm
TRANSISTOR A63
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pt 100 - to92
Abstract: pt 100 to92 MPS-A63 MPS-A64 MPSA63
Text: G Ql E SOLID STATE 3875081 G E SOLID STATE Signal Transistors_ DE § 3û750âl □G17tn G 01E 17990 1 D _ 2.7 MPS-A63, MPS-A64 Silicon Darlington Transistors TO-92 The GE/RCA MPS-A63 and A64 are planar epitaxial passivated PNP silicon Darlington transistors designed for preamplitier input applications where high im pedance is a
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MPS-A63,
MPS-A64
MPS-A63
MPS-A63
100mA
100kHz)
300ns
pt 100 - to92
pt 100 to92
MPS-A64
MPSA63
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WJ-A63
Abstract: bc 162 transistor Transistor BC 227 WJ-CA63 wjca63
Text: uuJ A63 / SMA63 5 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.0 dB TYP. MEDIUM THIRD ORDER I.R: +15 dBm (TYP.) HIGH GAIN: 16 dB (TYR) • ¡■ B B lM g g » » miKKKtM Specifications* Characteristics Outline Drawings
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SMA63
1-800-WJ1-4401
WJ-A63
bc 162 transistor
Transistor BC 227
WJ-CA63
wjca63
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2SC42
Abstract: 2SC4252 Transistor MAV 1 kps6
Text: TO SH IBA 2SC4252 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4252 Unit in mm TV TUNER, VHF OSCILLATOR APPLICATIONS COMMON COLLECTOR 2.1 ¿ 0 . 1 • Transition Frequency is High and Dependent on Current Excellently. 1 .25Ì0.1 in ID o MAXIMUM RATINGS (Ta = 25°C)
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2SC4252
2SC42
SC-70
2SC4252
Transistor MAV 1
kps6
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted
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MPSA63
MMBTA63
PZTA63
MPSA64
MPSA63
MMBTA63
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS T A = 25°C unless o th e rw ise noted
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MPSA63
MMBTA63
PZTA63
MPSA63
MMBTA63
PSA64
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TRANSISTOR A63
Abstract: sot23 A63 FAIRCHILD SOT-223 MARK MPSA64 MMBTA63 MPSA63 PZTA63
Text: S E M IC O N D U C T O R tm MMBTA63 SOT-23 PZTA63 B / PZTA63 TO-92 / MMBTA63 MPSA63 SOT-223 M a rk : 2U PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61.
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MPSA63
MMBTA63
OT-23
PZTA63
OT-223
MPSA64
TRANSISTOR A63
sot23 A63
FAIRCHILD SOT-223 MARK
MMBTA63
MPSA63
PZTA63
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a872 TRANSISTOR equivalent
Abstract: WJ-331240 WJ-A15 free transistor a7s wj331240 WJA9 WATKINS-JOHNSON CO WJA15 WJ PA15 A19F
Text: Application Information for Thin Film Cascadable Amplifiers INSIDE THE TO-8 AMPLIFIER: BASIC CIRCUIT CONCEPTS This discussion covers the basic circuit concept behind the cascadable amplifier and details some of the techniques that are used to maintain hardware stability in the
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HP340B
a872 TRANSISTOR equivalent
WJ-331240
WJ-A15
free transistor a7s
wj331240
WJA9
WATKINS-JOHNSON CO
WJA15
WJ PA15
A19F
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2SC4247
Abstract: No abstract text available
Text: TOSHIBA 2SC4247 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4247 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • 2.1 ±0.1 Transition Frequency is High and Dependent on Current Excellently. MAXIMUM RATINGS (Ta = 25°C)
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2SC4247
SC-70
2SC4247
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2u91
Abstract: MA62
Text: DEjb3b7B5M b4 M O T O R O L A SC Í X S T R S / R F> •*^ DDb7331 B | " T -29-29 .v. MOTOROLA M M A 6 2 v .*,^ j t M M A 6 3 W S E M I C O N D U C T P R S - -• -f-.P’i î . BOX 2Û912 • PHÖENIX, A R IZO N A 8503§ ; MEDIUM VOLTAGE PNP SILICON DARLINGTON TRANSISTORS
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DDb7331
2u91
MA62
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