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    A2XD Price and Stock

    APEM Inc KG412A2XDA26X6

    SWITCH ROCKER DPST 15A 12V
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    DigiKey KG412A2XDA26X6 Bulk 38 1
    • 1 $23.48
    • 10 $20.255
    • 100 $17.4631
    • 1000 $15.73582
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    Mouser Electronics KG412A2XDA26X6
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    Newark KG412A2XDA26X6 Bulk 3 1
    • 1 $21.47
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    RS KG412A2XDA26X6 Bulk 8 Weeks 40
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    • 100 $20.64
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    Master Electronics KG412A2XDA26X6
    • 1 $38.9
    • 10 $24.32
    • 100 $18.88
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    CTS Corporation 445A2XD14M31818

    CRYSTAL 14.31818MHZ 18PF SMD
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    DigiKey 445A2XD14M31818 Reel 1,000
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    Avnet Americas 445A2XD14M31818 Reel 8 Weeks 1,000
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    Mouser Electronics 445A2XD14M31818
    • 1 $0.68
    • 10 $0.596
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    Avnet Abacus 445A2XD14M31818 Reel 10 Weeks 1,000
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    CTS Corporation 445A2XD27M00000

    CRYSTAL 27.0000MHZ 18PF SMD
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    DigiKey 445A2XD27M00000 Reel 1,000
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    Avnet Americas 445A2XD27M00000 Reel 8 Weeks 1,000
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    Mouser Electronics 445A2XD27M00000
    • 1 $0.68
    • 10 $0.596
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    Avnet Abacus 445A2XD27M00000 Reel 10 Weeks 1,000
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    CTS Corporation 445A2XD24M00000

    CRYSTAL 24.0000MHZ 18PF SMD
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    DigiKey 445A2XD24M00000 Reel 1,000
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    Avnet Americas 445A2XD24M00000 Reel 8 Weeks 1,000
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    Mouser Electronics 445A2XD24M00000
    • 1 $0.68
    • 10 $0.596
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    Avnet Abacus 445A2XD24M00000 Reel 10 Weeks 1,000
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    CTS Corporation 445A2XD24M57600

    CRYSTAL 24.5760MHZ 18PF SMD
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    DigiKey 445A2XD24M57600 Reel 1,000
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    • 1000 $0.46824
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    Avnet Americas 445A2XD24M57600 Reel 8 Weeks 1,000
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    Mouser Electronics 445A2XD24M57600
    • 1 $0.68
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    • 10000 $0.349
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    Avnet Abacus 445A2XD24M57600 Reel 10 Weeks 1,000
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    A2XD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    zck m1

    Abstract: SIEMENS BST ABIAP zck d15 D1113 SIEMENS BST h 05 90 SIEMENS SCR BST smd marking mop smd marking T22 Siemens pulse sequence
    Text: SIEM ENS HYB 39S13620TQ-6/-7/-8 Overview • Special Mode Registers High Performance: -6 -7 -7 -8 Units fc K 166 125 125 125 MHz latency 3 2 3 3 - ÍCK3 6 8 7 8 ns ^AC3 5.5 5.5 5.5 6 Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability


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    PDF 39S13620TQ-6/-7/-8 cycles/32 39S16320TQ 023Sb05 zck m1 SIEMENS BST ABIAP zck d15 D1113 SIEMENS BST h 05 90 SIEMENS SCR BST smd marking mop smd marking T22 Siemens pulse sequence

    d4564841

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.


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    PDF 64M-bit uPD4564441 864-bit 54-pin d4564841

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.


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    PDF 64M-bit uPD4564441 864-bit 54-pin M12621EJBV0DS00

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HYB 39S13620TQ-6/-7/-8 Overview • Special Mode Registers High Performance: -6 -7 -7 -8 Units fcK 166 125 125 125 MHz latency 3 2 3 3 - tcKS 6 8 7 8 ns {AC3 5.5 5.5 5.5 6 ns Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability


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    PDF 39S13620TQ-6/-7/-8 cycles/32

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: Multiple Burst Read with Single W rite Operation -8 -8B -10 Units 125 100 100 MHz fCK3 8 10 10 ns Data M ask for Read/W rite control fAC3 6 6 7 ns Data M ask for byte control


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    PDF 39S256400/800/160T 0235b05 39S256400/80Q/160AT A53SbDS D1113G0

    d4516161

    Abstract: MPD4516421
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description T he /¿PD4516421, 451 6821, 4516161 are high-speed 16,777,216 -bit s y nchrono us dyna m ic random -access m em o ries, org a n ize d a s 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524 ,288 x 16 x 2 w ord x bit * ban k}, respectively.


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    PDF uPD4516421 uPD4516821 uPD4516161 16M-bit PD4516421, 44-pin 50-pin VP15-107-2 IR35-107-2 d4516161 MPD4516421

    Untitled

    Abstract: No abstract text available
    Text: ^ 1-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-W 0RDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM


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    PDF TC59LM814/06CFT TC59LM814CFT 304-words TC59LM806CFT TC59LM614/06CFT-50

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.


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    PDF uPD45128441 uPD45128841 uPD45128163 128M-bit 728-bit 54-pin 12650EJ9V0D PD45128441, uPD45128xxx

    SMD marking s07

    Abstract: smd marking YB smd marking T22 smd code Yj 33 1t211 39S16400 JEM AC3 ml 721 T1-1 P-TSOPII-44 SP 1191
    Text: SIEM EN S 16 MBit Synchronous DRAM • HYB 39S16400/800/160CT-8/-10 High Performance: /c K M A X ?CK3 -8 -10 Units 125 100 MHz 8 10 ns ! AC3 6 7 ?CK2 10 12 ns ?AC2 6 8 ns ns • Multiple Burst Read with Single Write Operation • Autom atic and Controlled Precharge


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    PDF 39S16400/800/160CT-8/-10 fl235b05 SMD marking s07 smd marking YB smd marking T22 smd code Yj 33 1t211 39S16400 JEM AC3 ml 721 T1-1 P-TSOPII-44 SP 1191

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD45128441,45128841,45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.


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    PDF //PD45128441 128M-bit uPD45128441 728-bit 54-pin 12650EJ80D

    A91A

    Abstract: pd45256 toyo uPD45256441G5-A10B-9JF uPD45256841G5-A10B-9JF AYAA
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT jUPD45256441,45256841,45256163 256M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45256441, 45256841, 45256163 are high-speed 268,435,456 bit synchronous dynamic random-access memories, organized as 16,777,216x4x4, 8,388,608x8x4, 4,194,304x16x4 word x bit x bank , respectively.


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    PDF uPD45256441 uPD45256841 uPD45256163 256M-bit 216x4x4, 608x8x4, 304x16x4 54-pin M13394EJ3V0DS00 A91A pd45256 toyo uPD45256441G5-A10B-9JF uPD45256841G5-A10B-9JF AYAA