B60 C160
Abstract: mitac mitac 6120 C285
Text: 1 2 3 4 5 6 7 8 PCCARD SOCKET A A 12 ACA[0.25] 12 ACD[0.15] ACA[0.25] U504 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 A32 A33 A34 A35 A36 A37 A38 A39 A40 A41 A42 A43 A44 A45 A46 A47
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ACD11
ACD12
ACD13
ACD14
ACD15
ACA10
ACA11
ACA17
ACA18
ACA13
B60 C160
mitac
mitac 6120
C285
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Untitled
Abstract: No abstract text available
Text: RT9161/A 300/500mA Low Dropout Linear Voltage Regulator General Description Features The RT9161/A is a 300/500mA fixed output voltage low dropout linear regulator. Typical ground current is approximately 110 A, from zero to maximum loading conditions. Wide range of available output voltage fits most
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RT9161/A
300/500mA
RT9161/A
OT-23
300mA)
OT-89
OT-223
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PAL Decoder 16L8
Abstract: 2N3904 A31 ICT-286-S-TG 2N3904 A30 ICT-286-STG ICT-203-S-TG NSH-36SB-S2-TG30 20000000-3FFFFFFF ICE-283-S-TG P1C30
Text: CHAPTER 10 DSP96002 APPLICATION DEVELOPMENT MODULE HARDWARE DESCRIPTION 10.1 BOARD ARCHITECTURE The DSP96002 ADM has various options to facilitate evaluation of the different features of the chip. These options are outlined in this chapter with a statement on the default factory jumpers the ADM will be shipped with.
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DSP96002
ADM96002
PAL Decoder 16L8
2N3904 A31
ICT-286-S-TG
2N3904 A30
ICT-286-STG
ICT-203-S-TG
NSH-36SB-S2-TG30
20000000-3FFFFFFF
ICE-283-S-TG
P1C30
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Untitled
Abstract: No abstract text available
Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits • Reduced Noise due to process improvement Monolithic Design High slew rate
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LSK489
25-year-old,
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A29 IC
Abstract: MARKING A29 A29 diode
Text: RT9167/A Low-Noise, Fixed Output Voltage,300mA/500mA LDO Regulator General Description Features The RT9167/A is a 300mA/500mA low dropout and low noise micropower regulator suitable for portable applications. The output voltages range from 1.5V to 5V in 100mV increments and 2% accuracy. The RT9167/A is
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RT9167/A
300mA/500mA
RT9167/A
100mV
DS9167/A-29
A29 IC
MARKING A29
A29 diode
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MACH465
Abstract: 85C30 MACH465-12 EZ-030 AM29030 D1667 29030 27C010 MACH220 MAX232
Text: Using a PC I Bus as the I /O Bus on an Am29030/040 M icroprocessor Design Application Note This application note describes how the Peripheral Component Interconnect (PCI) bus can be used as the I/O bus portion on a two-bus microcontroller design. Additionally, one
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Am29030/040
Am29030/040TM
32-bit
64-bit
Am186,
Am386,
Am486,
Am29000
MACH465
85C30
MACH465-12
EZ-030
AM29030
D1667
29030
27C010
MACH220
MAX232
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K9F4G08U0A-PCB0
Abstract: K9F4G08U0A K9F4G08U0A-P K9K8G08U1A K9K8G08U1A-I K9F4G08U0A-PCB uLGA K9F4G08U0A-I
Text: Preliminary FLASH MEMORY K9K8G08U1A K9F4G08U0A K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9K8G08U1A
K9F4G08U0A
K9XXG08UXA
K9F4G08U0A-PCB0
K9F4G08U0A
K9F4G08U0A-P
K9K8G08U1A
K9K8G08U1A-I
K9F4G08U0A-PCB
uLGA
K9F4G08U0A-I
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K9F4G08U0B
Abstract: K9F4G08U0B-PCB0 K9G4G08U0B Samsung k9f4g08u0b SAMSUNG 4gb NAND Flash Qualification Report K9F4G08U0B-I SAMSUNG NAND Flash Qualification Report K9G4G08B0B SAMSUNG 256Mb NAND Flash Qualification Reliability k9f4g08u0bpcb0
Text: Advance FLASH MEMORY K9K8G08U1B K9F4G08U0B K9F4G08B0B K9XXG08XXB INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9K8G08U1B
K9F4G08U0B
K9F4G08B0B
K9XXG08XXB
K9F4G08U0B-PCB0
K9G4G08U0B
Samsung k9f4g08u0b
SAMSUNG 4gb NAND Flash Qualification Report
K9F4G08U0B-I
SAMSUNG NAND Flash Qualification Report
K9G4G08B0B
SAMSUNG 256Mb NAND Flash Qualification Reliability
k9f4g08u0bpcb0
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K9F4G08U0M
Abstract: two-plane program nand
Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History Draft Date Remark 1. Initial issue 2. two-plane page program technical note is modified. p27, p35 3. Figure 17.(p37) is modified.
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K9K8G08U1M
K9F4G08U0M
K9F4G08U0M
two-plane program nand
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DIODE A34
Abstract: General Semiconductor diode ed 25 IR55 1405A 1403A a29 diode diode MARKING A33 diode a29 MARKING A29 MMBD1401
Text: MMBD1401A FAIRCHILD =Is/ll C O N D U C T O R i C O N N E C T IO N D IA G R A M S 1 1 j] 0 - 2 NC H 4 - A29 3 3 I j 1404A i — I3 1401^ 3 f JEL 140SA M ARKING S O T -2 3 M M BD1401A A29 M M BD1403A A32 M M BD1404A M M BD1405A A33 A34 V + + 1 2 * 1 Ì J 2
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MMBD1401A
OT-23
MMBD1404A
MMBD1403A
MMBD1405A
1403a
1405a
DIODE A34
General Semiconductor diode ed 25
IR55
1405A
1403A
a29 diode
diode MARKING A33
diode a29
MARKING A29
MMBD1401
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1404A
Abstract: No abstract text available
Text: MMBD1401A FAIRCHILD :m iü d n d u c t q r i C O N N E C T IO N 1401A I 7 1 2 NC 1403A 1 X T T 1 2 3 1 H « -" H «— A33 A34 J MARKING MMBD1401A A29 MMBD1404A MMBD1403A A32 MMBD1405A f 3 I 1404A SOT-23 D IA G R A M S 1405A 2 j High Voltage General Purpose Diode
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MMBD1401A
MMBD1401A
MMBD1404A
MMBD1403A
MMBD1405A
OT-23
1404A
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Untitled
Abstract: No abstract text available
Text: HOJA S IN E S C A L A •aic C\i vT A D im e n s io n fin a l Cable conectado 6,02^0,13 (.237 £.005) Terminated dim ension 6,02- 0,13 (.237^.005) t ,02 Ref. PLANO N° “H i 5,2 *7° La clavija acepta cabíeciita Oropel 0 0,7 4 -i- 0,99 úC29-r.039) en una c a m isa de 2 a29 i 0,25 x 4,83 t 0,25 ( .09 0±
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C29-r
-KG39
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BD1405A
Abstract: 1405A 1403A 404a
Text: MMBD1401A FAIRCHILD :m iü d n d u c t q r i C O N N E C T IO N 1401^ j ? 1 2 NC M M B D 1404A M M B D 1405A A33 A34 V 1 + 1 2 3 1 * M A R K IN G M M BD 1401A A29 M M BD 1403A A32 1403A ^ +* 3 I 1404A SOT-23 D IA G R A M S « 1405A * 2 J High Voltage General Purpose Diode
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MMBD1401A
MMBD1401A
OT-23
BD1405A
1405A
1403A
404a
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Untitled
Abstract: No abstract text available
Text: Q8mm Bezel LEDs T e c h n ica l Data Bezel Material Brass, mirror or black chromefinish Insert Material POM Ambient Temperature -40 deg.C. +85 deg.C Soldering Temperature 260 deg. C < 5 sec. w & Bezel Color SW 15 M 12xQ,75 chrome % Anode A\ o mat black SL
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Untitled
Abstract: No abstract text available
Text: Q u ic k S w itc h P ro d u c ts q s 34 x v h 245 3.3V 32-Bit Bus Switch , o r H o t S w a P Applications HotSwitch & U O O R IN C FEATURES/BENEFITS DESCRIPTION • The QS34XVH245 HotSwitch 32-bit bus switch is specially designed for hot-swapping environment.
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32-Bit
QS34XVH245
200ps
MDSL-00273-02
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QS3R245
Abstract: millipaq package C2259 QS34XR245 QS34XR245Q3
Text: m QS34XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-pit Low Resistance MultiWidth pus Switches Q uality S em ic o n d u c to r , I n c . ADVANCE INFORMATION DESCRIPTION FEATURES/BENEFITS The QS34XR245 is a member of the M ultiW idth™ family of QuickSwitch devices and provides a set of
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32-pit
QS34XR245
QS34XR245Q3
32-bit
QS3R245
80-pin
AN-13)
QS34XR245
MDSL-00253-00
millipaq package
C2259
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Untitled
Abstract: No abstract text available
Text: 1 QuickSwitch Products qs 34xr 245 High-Speed CMOS QuickSwitch 3 2 ' B i t Low Resistance MultiWidth Bus Switches s™ ico n d u cio r,in c. FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5i2 bidirectional switches connect inputs
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QS34XR245Q3
32-bit
QS3R245
80-pin
QS34XR245
MDSL-00253-01
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Untitled
Abstract: No abstract text available
Text: 2049 SERIES □ m \r\ P.C.B. SOCKET 2.54mm 0.100" M ate ria l: Housing: 30% Glass filled PBT U L94V—0. Contacts: Phosphor Bronze. Plating: Gold plated: 5 / ! ' over 5 0 /x nickel. Tin plated: 150/i' over 70/i' nickel. E le c t r ic a l C h a r a c t e r is t ic s :
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150/i'
5000M
100mA
54mmX7
T017757
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millipaq package
Abstract: diode 439 b14 QS34X245 A6873 QS3245 QS34X2245
Text: H QuickSwitch Products q s 34X245 High-Speed CMOS qs34X2245 QuickSwitch 32-ßit MultiWidth ßus Switches S ™ ic o n d u c io r,In c . FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional switches connect inputs
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qss4X245
qs34x2245
QS34X245
32-bit
QS3245
QS34X2245
80-pin
AN-13)
AN-11)
006in.
millipaq package
diode 439 b14
A6873
QS3245
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Untitled
Abstract: No abstract text available
Text: 2049 SERIES □ m kn P.C.B. SOCKET 2.5 4 m m 0 .1 0 0 " M aterial: H ousing: 30% Glass filled PBT UL94V— 0. C o n ta cts: P hospho r Bronze. P lating: Gold plated: 5 /I' over 5 0 /x nickel. Tin plated: 15 0 /i' over 70¡i nickel. E le c tric a l C h a r a c t e r is t ic s :
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54mmX7
UL94V-0.
5000M
100mA
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diode A28
Abstract: No abstract text available
Text: High-Speed 3.3V CMOS Q Q uality qs 74lcx 4x 244 Buffer/Line Driver 1 u a li S e m ic o n d u c t o r . In c FEATURES/BENEFITS DESCRIPTION • • • • • • • The QS74LCX4X244 is a 32-bit buffer/line driver with three-state outputs that is ideal for driving high
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74lcx
32-bit
QS74LCX244
500mA
QS74LCX4X244
MDSL-00199-01
diode A28
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CHROME ART
Abstract: No abstract text available
Text: ELMA 0 8 mm Bezel LED’s Innovative Elm a Electronic Inc Office: 510 656 0606 Fax: 510 656 8008 E-M ail: sa;<n.@n ma com W eb: www.eim a.com in E l e c t r o n i c s Technical Data Bezel Matenal Brass, mirror or Back chrometinshed Bezel Material Brass, rucket-plated and mirror ctromgfinished
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POM/2672,
CHROME ART
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Untitled
Abstract: No abstract text available
Text: MENTOR 0 8 mm LED’s in Metallfassungen 0 8 mm Bezel LED’s Signaux LED 0 8 mm Technische Daten Technical Data Werkstoff, Fassung Bezel Material Messing, hochgl. oder schwarz verchromt/Brass, mirror or black chromefinished Werkstoff, Fassung 2672. Bezel Material
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POM/2672,
M12xQf75
2676e*
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67b9
Abstract: No abstract text available
Text: QS74LCX4XH244 High-Speed 3.3V C M O S 32-Bit Buffer/Line Driver with Bus Hold Q u a lity S em iconductor , In c . FEATURES/BENEFITS DESCRIPTION • 32-bit function compatible to QS74LCX244 • Bus hold feature holds last active state during 3-state operation
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32-Bit
QS74LCX4XH244
QS74LCX244
500mA
MDSL-00277-00
QS74LCX4XH244
QS74LCX
80-pin
32-Bit
67b9
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