SGA-2286
Abstract: DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier
Text: Product Description Stanford Microdevices SGA-2286 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-2286
SGA-2286
DC-3500
EDS-100625
DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier
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SGA-2263
Abstract: A22 T transistor transistor data cd
Text: Product Description Stanford Microdevices SGA-2263 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-2263
SGA-2263
DC-3500
EDS-100626
A22 T transistor
transistor data cd
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Catalog Sensors for Process Applications
Abstract: NCB1.5-8GM25-N0 5M
Text: FACTORY AUTOMATION CATALOG SENSORS FOR PROCESS APPLICATIONS 1FQQFSM 'VDIT°6OCFBUBCMFGPSRVBMJUZBOEDIPJDF 8F BSF B MFBEJOH NBOVGBDUVSFS PG JOEVTUSJBM TFOTPST BOE TFOTPS TZTUFNT
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199003130E
Catalog Sensors for Process Applications
NCB1.5-8GM25-N0 5M
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triac ansteuerung
Abstract: M2545A mov 250 ac m5957 DOLD vde 0435 IEC 947-5-1 iec 947.5 iec 947.5.1 relais 275 m595
Text: Installations- / Steuerungstechnik Koppelrelais IK 3070, Koppelrelaissystem I_ 3070 Eingangskoppelrelais - Ausgangskoppelrelais 0213986 • nach IEC/EN 61 810-1 • Relais-, Triac- oder Transistorausgang • sichere Trennung nach VDE 0106 Teil 101 bei Geräten mit
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D-78114
triac ansteuerung
M2545A
mov 250 ac
m5957
DOLD vde 0435
IEC 947-5-1
iec 947.5
iec 947.5.1
relais 275
m595
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SMFV008
Abstract: No abstract text available
Text: Back SmartMediaTM SMFV008 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 10ms Max. → 4ms(Max.) 2. Changed Valid Block Number : 1004(Min.) → 1014(Min.)
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SMFV008
SMFV008
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rba9
Abstract: SMFV008
Text: SmartMediaTM SMFV008 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 10ms Max. → 4ms(Max.) 2. Changed Valid Block Number : 1004(Min.) → 1014(Min.)
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SMFV008
SMFV008
rba9
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Untitled
Abstract: No abstract text available
Text: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • IEEE802.11b/g/n WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems
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RF5125
IEEE802
11b/g/n
RF5125
203mm
330mm
025mm
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400F
Abstract: KM29V64000T
Text: KM29V64000T FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS Parameter : 10ms Max. → 4ms(Max.). 2. Removed reverse type package.
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KM29V64000T
400F
KM29V64000T
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KM29U64000IT
Abstract: KM29U64000T 400F
Text: KM29U64000T, KM29U64000IT FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to cha nge the
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KM29U64000T,
KM29U64000IT
KM29U64000IT
KM29U64000T
400F
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K1S2816BCM
Abstract: K1S2816BCM-I
Text: K1S2816BCM UtRAM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design Target April 12, 2004 Preliminary 0.1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE 1 (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter
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K1S2816BCM
8Mx16
K1S2816BCM
K1S2816BCM-I
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K9F6408U0B-TCB0
Abstract: 400F K9F6408U0B K9F6408U0B-TIB0
Text: K9F6408U0B-TCB0, K9F6408U0B-TIB0 Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark July 17th 2000 Preliminary 0.0 Initial issue. 1. Changed endurance : 1 million -> 100K program/erase cycles
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K9F6408U0B-TCB0,
K9F6408U0B-TIB0
K9F6408U0B-TCB0
400F
K9F6408U0B
K9F6408U0B-TIB0
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AN8472SA
Abstract: BC417 A22 T transistor BC114
Text: ICs for Compact Disc/CD-ROM Player AN8472SA Spindle motor driver IC for optical disk • Overview Unit: mm 11.0±0.3 32 17 ■ Applications 0.65 +0.10 0.3 –0.05 Seating plane 8.1±0.3 +0.10 0.2–0.05 1.5±0.2 6.1±0.3 0.625 16 0.65±0.10 1 0.1±0.1 • 3-phase full-wave 120° duty factor system
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AN8472SA
AN8472SA
BC417
A22 T transistor
BC114
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smartmedia ecc
Abstract: No abstract text available
Text: Advanced Information SmartMediaTM K9S6408V0B-SSB0 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History 0.0 Initial issue Draft Date Remark July 17th 2000 Preliminary Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9S6408V0B-SSB0
smartmedia ecc
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Untitled
Abstract: No abstract text available
Text: K1S28161CM UtRAM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design Target April 12, 2004 Preliminary 0.1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE 1 (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter
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K1S28161CM
8Mx16
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Untitled
Abstract: No abstract text available
Text: K9F6408U0B-TCB0, K9F6408U0B-TIB0 Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark July 17th 2000 Preliminary 1. Changed endurance : 1 million -> 100K program/erase cycles
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K9F6408U0B-TCB0,
K9F6408U0B-TIB0
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K9F6408U0A-TCB0
Abstract: 400F K9F6408U0A K9F6408U0A-TIB0 KM29U64000AIT KM29U64000AT
Text: K9F6408U0A-TCB0, K9F6408U0A-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1. Revised real-time map-out algorithm refer to technical notes
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K9F6408U0A-TCB0,
K9F6408U0A-TIB0
KM29U64000AT
K9F6408U0A-TCB0
KM29U64000AIT
000us
500us
K9F6408U0A-TCB0
400F
K9F6408U0A
K9F6408U0A-TIB0
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KM29U64000IT
Abstract: KM29U64000T 400F K9F6408U0M-TCB0 K9F6408U0M-TIB0
Text: K9F6408U0M-TCB0, K9F6408U0M-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final 1.1 Data Sheet. 1999
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K9F6408U0M-TCB0,
K9F6408U0M-TIB0
KM29U64000T
K9F6408U0M-TCB0
KM29U64000IT
400F
K9F6408U0M-TCB0
K9F6408U0M-TIB0
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K9S2808V0C
Abstract: K9S6408V0C K9S5608V0X
Text: K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B SmartMediaTM Document Title SmartMediaTM Card Revision History Revision No Draft Date Remark 0.0 Initial issue July 17th 2000 0.1 1. Explain how pointer operation works in detail. 2. Updated operation for tRST timing
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K9S5608V0C/B
K9S2808V0C/B
K9S6408V0C/B
K9S2808V0C
K9S6408V0C
K9S5608V0X
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date code marking samsung
Abstract: digital VOICE RECORDER data sheet K9S6408V0A-SSB0 SmartMedia Logical Format K9S3208V0A K9S6408V0A SmartMediaTM Physical Format Specifications A22 T transistor
Text: SmartMediaTM K9S6408V0A-SSB0 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark 0.0 Initial issue April 10th 1999 Preliminary 0.1 1. Changed device name - SMFV008A -> K9S6408V0A-SSB0 Sep. 15th 1999 Preliminary
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K9S6408V0A-SSB0
SMFV008A
000us
500us
date code marking samsung
digital VOICE RECORDER data sheet
K9S6408V0A-SSB0
SmartMedia Logical Format
K9S3208V0A
K9S6408V0A
SmartMediaTM Physical Format Specifications
A22 T transistor
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Samsung 6v 6 pin camera
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9F6408U0A-TCB0, K9F6408U0A-TIB0 Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1. Revised real-time map-out algorithm refer to technical notes
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K9F6408U0A-TCB0,
K9F6408U0A-TIB0
KM29U64000AT
K9F6408U0A-TCB0
KM29U64000AIT
K9F6408U0A-TIB0
000us
500us
Samsung 6v 6 pin camera
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K9S6408V0B
Abstract: K9S6408V0B-SSB0
Text: Advanced Information SmartMediaTM K9S6408V0B-SSB0 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark Advanced Information 0.0 Initial issue July 17th 2000 0.1 1. Changed don’t care mode in address cycles
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K9S6408V0B-SSB0
K9S6408V0B
K9S6408V0B-SSB0
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transistor BC1
Abstract: compact disc dvd player circuit diagram TRANSISTOR a31 AN8472SA 11 pins dvd player motor cd-rom circuit diagram BC417
Text: ICs for Compact Disc/CD-ROM Player AN8472SA Spindle motor driver IC for optical disk • Overview Unit: mm 32 17 1 16 8.1±0.3 11.0±0.3 6.1±0.3 The AN8472SA is a high performance IC suited for driving a spindle motor of an optical disk such as CD-ROM, DVD etc. Small outline package can
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AN8472SA
AN8472SA
bui72SA
transistor BC1
compact disc dvd player circuit diagram
TRANSISTOR a31
11 pins dvd player motor
cd-rom circuit diagram
BC417
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A22 T transistor
Abstract: RS Components transistor t03
Text: RS Technical Library T03 Transistor Cover Dimensions RS Stock No 402-131 A22-4015 T 0 3 thin flange 1.375 34 .93 480 ( 12 . 19 ) 00 in oo d m CM RS Components shall not b e liable for any liability or loss of any nature (howsoever caused and whether or not due to RS components' negligence)
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A22-4015
A22 T transistor
RS Components
transistor t03
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14549F
Abstract: itt 946 946-5D itt 9094 ITT 946-1D dtl logic gates 9094-5d ITT 9097 5D ITT DTL 944-5D
Text: ITT Sem iconductors Integrated C irc u its -D T L D T L Series L o g ic Elem ents The D T L fam ily is a com prehensive set of silicon m onolithic logic elements designed to cover a wide range of military and industrial applications. The basis of the fam ily is a diode-transistor
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20MHz.
14549F
itt 946
946-5D
itt 9094
ITT 946-1D
dtl logic gates
9094-5d
ITT 9097 5D
ITT DTL
944-5D
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