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    A22 PACKAGE MARKING Search Results

    A22 PACKAGE MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    A22 PACKAGE MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: EN71GL128B0 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all


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    PDF EN71GL128B0 EN29GL128

    ENPSL32

    Abstract: EN29GL128 EN71GL128 cFeon Flash chip cFeon cFeon EN EN71GL EN71GL128B0 PSRAM top marking
    Text: EN71GL128B0 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all


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    PDF EN71GL128B0 ENPSL32 EN29GL128 EN71GL128 cFeon Flash chip cFeon cFeon EN EN71GL EN71GL128B0 PSRAM top marking

    EN71GL128

    Abstract: No abstract text available
    Text: EN71GL128B0 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all


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    PDF EN71GL128B0 EN29GL128 EN71GL128

    A22 SOT-23

    Abstract: A22 SOT23 RT9161 RT9161A marking a22
    Text: RT9161/A Preliminary 300/500mA Low Dropout Linear Voltage Regulator General Description The RT9161/A is a 300/500mA fixed output voltage low dropout linear regulator. Typical ground current is approximately 110µA, from zero to maximum loading conditions. Wide range of available output voltage fits


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    PDF RT9161/A 300/500mA RT9161/A OT-23 300mA) OT-89 OT-223 A22 SOT-23 A22 SOT23 RT9161 RT9161A marking a22

    23c128

    Abstract: 48-PIN
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD23C128040BL, 23C128080BL 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C128040BL and µPD23C128080BL are a 134,217,728 bits mask-programmable ROM. The word


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    PDF PD23C128040BL, 23C128080BL 128M-BIT 16M-WORD 16-BIT PD23C128040BL PD23C128080BL 44-pin 23c128 48-PIN

    23c128

    Abstract: 48-PIN
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C128040BL, 23C128080BL 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C128040BL and µPD23C128080BL are a 134,217,728 bits mask-programmable ROM. The word


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    PDF PD23C128040BL, 23C128080BL 128M-BIT 16M-WORD 16-BIT PD23C128040BL PD23C128080BL 44-pin 23c128 48-PIN

    23c128

    Abstract: 48-PIN
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD23C128040BL, 23C128080BL 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The μPD23C128040BL and μPD23C128080BL are a 134,217,728 bits mask-programmable ROM. The word


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    PDF PD23C128040BL, 23C128080BL 128M-BIT 16M-WORD 16-BIT PD23C128040BL PD23C128080BL 44-pin 23c128 48-PIN

    Untitled

    Abstract: No abstract text available
    Text: RT9166/A 300/600mA, Ultra-Fast Transient Response LDO Regulator General Description Features The RT9166/A series are CMOS low dropout regulators optimized for ultra-fast transient response. The devices are capable of supplying 300mA or 600mA of output current


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    PDF RT9166/A 300/600mA, RT9166/A 300mA 600mA 230mV 580mV

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128000BL 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) Description The µPD23C128000BL is a 134,217,728 bits mask-programmable ROM. The word organization is selectable


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    PDF PD23C128000BL 128M-BIT 16M-WORD 16-BIT PD23C128000BL 44-pin 48-pin

    Untitled

    Abstract: No abstract text available
    Text: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • IEEE802.11b/g/n WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems


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    PDF RF5125 IEEE802 11b/g/n RF5125 203mm 330mm 025mm

    44-PIN

    Abstract: 48-PIN
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128000BL 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) Description The µPD23C128000BL is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE


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    PDF PD23C128000BL 128M-BIT 16M-WORD 16-BIT PD23C128000BL 44-pin 48-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128000BL 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) Description The µPD23C128000BL is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE


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    PDF PD23C128000BL 128M-BIT 16M-WORD 16-BIT PD23C128000BL 44-pin 48-pin

    44-PIN

    Abstract: 48-PIN
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128000BL 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) Description The µPD23C128000BL is a 134,217,728 bits mask-programmable ROM. The word organization is selectable


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    PDF PD23C128000BL 128M-BIT 16M-WORD 16-BIT PD23C128000BL 44-pin 48-pin

    48-PIN

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128040L 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C128040L is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE


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    PDF PD23C128040L 128M-BIT 16M-WORD 16-BIT PD23C128040L 48-pin

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    48-PIN

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128040AL 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C128040AL is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE


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    PDF PD23C128040AL 128M-BIT 16M-WORD 16-BIT PD23C128040AL 48-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128040L 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C128040L is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE


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    PDF PD23C128040L 128M-BIT 16M-WORD 16-BIT PD23C128040L 48-pin

    Untitled

    Abstract: No abstract text available
    Text: OKI Semiconductor MR27V12852L 8M–Word x 16–Bit or 16M–Word × 8–Bit Page mode FEDR27V12852L-02-01 Issue Date: May 10, 2006 P2ROM FEATURES •8,388,608-word × 16-bit/16,777,216-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit


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    PDF MR27V12852L FEDR27V12852L-02-01 608-word 16-bit/16 216-word 16-Bit 16-word MR27V12852L-xxxTA 56-pin 56-P-1420-0

    48-PIN

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128000AL 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) Description The µPD23C128000AL is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE


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    PDF PD23C128000AL 128M-BIT 16M-WORD 16-BIT PD23C128000AL 48-pin

    48-PIN

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128000L 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) Description The µPD23C128000L is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE


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    PDF PD23C128000L 128M-BIT 16M-WORD 16-BIT PD23C128000L 48-pin

    MR27V12800J-XXXTY

    Abstract: MR27V12800J
    Text: FEDR27V12800J-02-05 OKI Semiconductor MR27V12800J 8M–Word x 16–Bit or 16M–Word × 8–Bit Issue Date: Jun. 4, 2003 P2ROM FEATURES •8,388,608-word × 16-bit/16,777,216-word × 8-bit electrically switchable configuration · 3.0 V to 3.6 V power supply


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    PDF FEDR27V12800J-02-05 MR27V12800J 608-word 16-bit/16 216-word MR27V12800J-xxxTN) MR27V12800J-xxxTNE) MR27V12800J-xxxTN, MR27V12800J-xxxTNE 48-pin MR27V12800J-XXXTY MR27V12800J

    MR27V12852L

    Abstract: 56TSOP MR27V12852
    Text: FEDR27V12852L-002-01 Issue Date: Oct 01, 2008 MR27V12852L 8M–Word x 16–Bit or 16M–Word × 8–Bit Page mode P2ROM FEATURES • 8,388,608-word × 16-bit/16,777,216-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit


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    PDF FEDR27V12852L-002-01 MR27V12852L 608-word 16-bit/16 216-word 16-Bit 16-word MR27V12852L-xxxTA 56-pin 56-P-1420-0 MR27V12852L 56TSOP MR27V12852