IS29F010-70PL
Abstract: IS29F010
Text: IS29F010 IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory PRELIMINARY OCTOBER 1998 FEATURES • High-performance CMOS – 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply – 5V ± 10% for Read, Program, and Erase
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IS29F010
32-pin
IS29F010
IS29F010-45PLI
IS29F010-45TI
IS29F010-55PLI
IS29F010-70PL
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AS29F010
Abstract: Flash 32-PIN 5962-9669002HYA as29f010cw-70
Text: FLASH AS29F010 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMO- 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690 NC A16 A15 A12 A7
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AS29F010
32-PIN
MIL-STD-883
16Kbyte
AS29F010
Flash
5962-9669002HYA
as29f010cw-70
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EN29LV512
Abstract: No abstract text available
Text: EN29LV512 EN29LV512 da0. 512 Kbit 64K x 8-bit Uniform Sector, CMOS 3.0 Volt-only Flash Memory FEATURES • High performance program/erase speed - Byte program time: 8µs typical - Sector erase time: 500ms typical • Single power supply operation - Full voltage range: 2.7-3.6 volt read and write
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EN29LV512
500ms
512Kbit
EN29LV512
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atmel 8086
Abstract: 49f020 m29F DATASHEET AM29F002 002N AT49 SST39SF010A SST39SF020A SST39SF040 SST39VF020
Text: Designing In SST’s Multi-Purpose Flash 39 Series Byte-wide Products Designing In SST’s Multi-Purpose Flash (39 Series) Byte-wide Products Application Note April 2003 INTRODUCTION This application note introduces the SST 39 series - SST’s mainstream Multi-Purpose Flash (MPF) product line. It
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Am29F
SST39VF080
AT49LV008A-based
S72014-03-000
atmel 8086
49f020
m29F DATASHEET
AM29F002
002N
AT49
SST39SF010A
SST39SF020A
SST39SF040
SST39VF020
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Untitled
Abstract: No abstract text available
Text: EN29LV010 EN29LV010 da0. 1 Megabit 128K x 8-bit Uniform Sector, CMOS 3.0 Volt-only Flash Memory FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read
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EN29LV010
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cFeon
Abstract: cfeon 32 EN29LV010
Text: EN29LV010 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV010
cFeon
cfeon 32
EN29LV010
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M6MGB/T166S4BWG
Abstract: M6MGT166S4
Text: MITSUBISHI LSIs M6MGB/T166S4BWG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip
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M6MGB/T166S4BWG
216-BIT
16-BIT
304-BIT
144-WORD
16-BIT)
M6MGB/T166S4BWG
16M-bits
72-pin
M6MGT166S4
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smd a5
Abstract: AS29F010D
Text: FLASH AS29F010 Austin Semiconductor, Inc. 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690
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MIL-STD-883
AS29F010
32-PIN
16Kbyte
impleme5962-9669004HYA
5962-9669003HYA
5962-9669002HYA
5962-9669001HYA
smd a5
AS29F010D
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32-PIN
Abstract: AS29F010
Text: FLASH AS29F010 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMO- 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690 NC A16 A15 A12 A7
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AS29F010
32-PIN
MIL-STD-883
16Kbyte
secto62-9669004HUA
5962-9669003HUA
5962-9669002HUA
5962-9669001HUA
AS29F010
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NEXFLASH
Abstract: NX29F010 NX29F010-90W AM29F010 NXPF001F-0600 nx29f01090p NX29F010-45W NX29F010-55W NX29F010-70W
Text: NX29F010 1M-BIT 128K x 8-bit CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY JUNE 2000 FEATURES • Ultra-fast Performance – 35, 45, 55, 70, and 90 ns max. access times • Temperature Ranges – Commercial 0oc-70oc – Industrial -40oc-85oc • Single 5V-only Power Supply
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NX29F010
0oc-70oc
-40oc-85oc
32-pin
AM29F010
NX29F010
NXPF001F-0600
NEXFLASH
NX29F010-90W
AM29F010
NXPF001F-0600
nx29f01090p
NX29F010-45W
NX29F010-55W
NX29F010-70W
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EN29LV010
Abstract: No abstract text available
Text: EN29LV010 EN29LV010 da0. 1 Megabit 128K x 8-bit Uniform Sector, CMOS 3.0 Volt-only Flash Memory FEATURES • High performance program/erase speed - Byte program time: 8µs typical - Sector erase time: 500ms typical • Single power supply operation - Full voltage range: 2.7-3.6 volt read and write
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EN29LV010
500ms
EN29LV010
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EON SILICON DEVICES
Abstract: 555H EN29F010
Text: EN29F010 EN29F010 1 Megabit 128K x 8-bit 5V Flash Memory FEATURES • JEDEC Standard program and erase commands • 5.0V operation for read/write/erase operations • JEDEC standard DATA polling and toggle bits feature • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns
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EN29F010
16Kbytes
32-Pin
EON SILICON DEVICES
555H
EN29F010
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Stacked Chip Scale Package
Abstract: T166S2BWG 98000H-9FFFFH MITSUBISHI GATE ARRAY
Text: MITSUBISHI LSIs M6MGB/T166S2BWG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip
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M6MGB/T166S2BWG
216-BIT
16-BIT
152-BIT
072-WORD
16-BIT)
M6MGB/T166S2BWG
16M-bits
72-pin
Stacked Chip Scale Package
T166S2BWG
98000H-9FFFFH
MITSUBISHI GATE ARRAY
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Untitled
Abstract: No abstract text available
Text: NX29F010 NX29F010 1M-BIT 128K x 8-bit CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY NOVEMBER 1999 FEATURES • Ultra-fast Performance – 35, 45, 55, 70, and 90 ns max. access times • Temperature Ranges – Commercial 0oc-70oc – Industrial -40oc-85oc
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NX29F010
0oc-70oc
-40oc-85oc
32-pin
AM29F010
NXPF003C-1199
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ne 5555 timer
Abstract: NX29F010 AM29F010 NXPF001F-0600 NX29F010-45W NX29F010-55W NX29F010-70W NX29F010-90W
Text: NX29F010 1M-BIT 128K x 8-bit CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY JUNE 2000 FEATURES • Ultra-fast Performance – 35, 45, 55, 70, and 90 ns max. access times • Temperature Ranges – Commercial 0oc-70oc – Industrial -40oc-85oc • Single 5V-only Power Supply
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NX29F010
0oc-70oc
-40oc-85oc
32-pin
AM29F010
NX29F010
NXPF001F-0600
ne 5555 timer
AM29F010
NXPF001F-0600
NX29F010-45W
NX29F010-55W
NX29F010-70W
NX29F010-90W
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atmel 8086
Abstract: 49f020 Am29 Flash Family m29F DATASHEET sst 90 AT49 SST39SF010A SST39SF020A AM29F002 SST39VF010
Text: Designing In SST’s Multi-Purpose Flash 39 Series Byte-wide Products Application Note October 2005 Designing In SST’s Multi-Purpose Flash (39 Series) Byte-wide Products INTRODUCTION This application note introduces the SST 39 series - SST’s mainstream Multi-Purpose Flash (MPF) product line. It
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SST39VF080
AT49LV008A-based
S72014-04-000
atmel 8086
49f020
Am29 Flash Family
m29F DATASHEET
sst 90
AT49
SST39SF010A
SST39SF020A
AM29F002
SST39VF010
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Untitled
Abstract: No abstract text available
Text: EN29LV512 EN29LV512 da0.Kbit 64K x 8-bit Uniform Sector, 512 CMOS 3.0 Volt-only Flash Memory FEATURES • High performance program/erase speed - Byte program time: 8µs typical - Sector erase time: 500ms typical • Single power supply operation - Full voltage range: 2.7-3.6 volt read and write
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EN29LV512
500ms
32-pin
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NX29F010
Abstract: AM29F010 NXPF001F-0600 NX29F010-45W NX29F010-55W NX29F010-70W NX29F010-90W
Text: NX29F010 1M-BIT 128K x 8-bit CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY JUNE 2000 FEATURES • Ultra-fast Performance – 35, 45, 55, 70, and 90 ns max. access times • Temperature Ranges – Commercial 0oc-70oc – Industrial -40oc-85oc • Single 5V-only Power Supply
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NX29F010
0oc-70oc
-40oc-85oc
32-pin
AM29F010
NX29F010
NXPF001F-0600
AM29F010
NXPF001F-0600
NX29F010-45W
NX29F010-55W
NX29F010-70W
NX29F010-90W
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Am29F010 Rev. A
Abstract: No abstract text available
Text: AMDZ1 A m 29F 010A 1 Megabit 128 K x 8-blt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Embedded Algorithms — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements
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20-year
32-pin
Am29F010A
Am29F010 Rev. A
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Untitled
Abstract: No abstract text available
Text: ISSI IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory p r e l im in a r y O c t o b e r 1998 FEATURES • High-performance CMOS - 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply - 5V ± 10% for Read, Program, and Erase
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IS29F010
program32
PK13197T32
T004404
00G05fc
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IS29F010-70PL
Abstract: No abstract text available
Text: IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory p r e l im in a r y Oc t o b e r 1998 FEATURES • High-performance CMOS - 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply - 5V ± 10% for Read, Program, and Erase
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IS29F010
IS29F010-45PLI
IS29F010-45TI
IS29F010-55PLI
IS29F010-55TI
IS29F010-70PLI
IS29F010-70TI
IS29F010-90PLI
IS29F010-90TI
FL006-1A
IS29F010-70PL
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microchannel
Abstract: No abstract text available
Text: PIN CONFIGURATION FEATURES * * * * IBM Compatible ESDI Drive Interface Direct Connection to Micro Channel Bus Contains ESDI Drive Interface Logic 16-Bit DMA Transfers on Micro Channel at up to 5 Mbyte/sec IBM Register File Emulation Internal 26 Byte FIFO
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16-Bit
MSD95C01
DX8-15
microchannel
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Untitled
Abstract: No abstract text available
Text: AMDil A m 2 9 L V 0 1 0 B 1 Megabit 128 K x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Unlock Bypass Mode Program Command — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV010B
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Am2F010
Abstract: AM29F010 AM29F01055 am29f010-90 AM29F010-70 Am29F010 Rev A
Text: FINA AMDB Am29F010 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V +10% for read, erase, and program operations — Simplifies system-level power requirements
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Am29F010
Am2F010
AM29F01055
am29f010-90
AM29F010-70
Am29F010 Rev A
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