Untitled
Abstract: No abstract text available
Text: HM62W1664H Series HM62W1864H Series P r e lim in a r y 65536-word x 16/18-bit High Speed CMOS Static RAM T h e H M 6 2 W 1 6 6 4 H /H M 6 2 W 1 8 6 4 H is an asyncronous 3.3 V operation high speed static RAM organized as 64 kword x 16/18 bit. It realize h ig h sp eed access tim e 2 5 /3 0 /3 5 /4 5 ns w ith
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HM62W1664H
HM62W1864H
65536-word
16/18-bit
1664H
1864H
400-mil
44-pin
1664HJP-25
1664Hto
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ATT3000
Abstract: ATT3020
Text: AT&T Data Sheet July 1992 Microelectronics ATT3000 Series Field-Programmable Gate Arrays FEATURES • High Performance— up to 150 MHz Toggle Rates • User-Programmable Gate Array • I/O functions • Digital logic functions • Interconnections • Flexible array architecture
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ATT3000
XC3000
ATT3020
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lh531
Abstract: LH531000B LH531000BN-S LH531000B-S
Text: L H ^ I n n O R l v / V * v u v - C ^ CMOS 1M 128K x 8 w _ 3 V-D rive M a sk-P ro g ram m a ble ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using
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LH531000B-S
28-pin,
450-mil
LH531000B-S
28-pin
LH531000B
lh531
LH531000BN-S
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Untitled
Abstract: No abstract text available
Text: H M 6 2 W 1 6 6 4 H S e r ie s H M 6 2 W 1 8 6 4 H S e r ie s 65536-w ord x Preliminary 16/18-b it High Speed C M O S Static RAM The H M 6 2 W I6 6 4 H /H M 6 2 W I8 6 4 U is an asynchronous 3.3 V o p e ra tio n high speed static R A M organized as 64 kword x 16/18 bit. It realize
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65536-w
16/18-b
1864H
400-mil
44-pin
TSOP-11
HM62W1664H/HM62W1864H
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Untitled
Abstract: No abstract text available
Text: ADV MI CRO ME MO R Y MÖE D D5S7SSÖ ÜD30b37 5 • AMDM T—46—1 3-25 Am27X040 4 Megabit (524,288 x 8-Bit) CMOS ExpressROM Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS ■ As an OTP EPROM alternative: - Factory optimized programming
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D30b37
Am27X040
0205-005A
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Untitled
Abstract: No abstract text available
Text: XC3000 Logic Celi “Array Family Product Specification FEATURES The LCA user logic functions and interconnections are determined by the configuration program data stored in internal static memory cells. The program can be loaded in any of several modes to accommodate various system
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XC3000
XC1736
XC2000
XC3000
XC3020-70PC68C
XC2018
XC3020
PGA68,
PGA84
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HM62W1664HUP-35
Abstract: No abstract text available
Text: HM62W1664H / HM62W1864H Series 65,536-word x 16/18-bit High Speed CMOS Static RAM HITACHI The H M 6 2 W 1 6 6 4 H /H M 6 2 W 1 8 6 4 H is an Ordering Information a s y n c h ro n o u s 3.3 V o p e ra tio n h ig h s p e e d sta tic R A M o r g a n i z e d a s 6 4 - k w o r d x 1 6 /1 8 - b i t. It
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HM62W1664H
HM62W1864H
536-word
16/18-bit
HM62W1664HJP-30
HM62W1664HJP-35
HM62W1664HJP-45
HM62W1664HUP-30
HM62W1664HUP-35
HM62W1664HUP-45
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Untitled
Abstract: No abstract text available
Text: CMOS 8M 1M x 8 MROM FEATURES • 1,048,576 words x 8 bit organization • Access time: 120 ns (MAX.) PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW 1 • 32 Zl Vcc A ^ IZ 2 31 Zl a 18 A1 5 C 3 30 □ A12IZ 4 29 □ A 14 A7C 5 28 Zl a 13 Aig IZ • Power consumption:
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32-pin,
600-mil
525-mil
400-mil
32-PIN
A12IZ
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614l
Abstract: BNXXX
Text: CMOS SyncBiFlFO WITH BUS-MATCHING AND BYTE SWAPPING 64 X 36 X 2 IDT723614 Integrated Device Technology, Inc. FEATURES: • Free-running CLKA and CLKB can be asynchronous or coincident simultaneous reading and writing of data on a single clock edge is permitted
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36-bits
18-bits
IDT723614
MO-136,
727-S11*
492-M
PSC-4036
614l
BNXXX
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HM658512LP-10V
Abstract: HM658512LP10
Text: HM658512 Series 524288-Word x 8-Bit High Speed Pseudo Static RAM Features Ordering Information • Single 5 V ±10% • Highspeed - Access time CE access time: 80/85/100/120 ns - Cycle time Random read/write cycle time: 130/160/190 ns • Low power - 250 mW typ active
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HM658512
524288-Word
32-pin
DP-32)
HM658512LP-8V
HM658512LP-10V
HM658512LP-12V
HM658512DP-8
HM658512DP-10
HM658512DP-12
HM658512LP-10V
HM658512LP10
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M6MGB/T160S2BVP 16,777,216-BIT 1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION FEATURES
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M6MGB/T160S2BVP
216-BIT
16-BIT
152-WORD
152-BIT
072-WORD
144-WORD
M6MGB/T160S2BVP
16M-bits
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