A14735EE2V0PL00 Search Results

LVDS to eDP

Abstract: CB10VX V30MZ VR41 nec cb core
Text: CB-10VX 0.25 µm Features >> 0.25 µm drawn, 0.18 µm effective Ti-Silicide CMOS process >> Extensive support of state-of-the-art cores and interfaces >> Available gate counts from 597k to 21.3 million gates >> Supports 1.8 V and 2.5 V core voltages >> Significant low power dissipation of