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    A13E IC Search Results

    A13E IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
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    A13E IC Price and Stock

    Abracon Corporation AMPDDFH-A13

    Frequency Selectable Mems Oscilator - XO (Standard) - 6.1298496MHz - ±25 ppm - 1.71V to 3.63V - 1.3mA (Typ) - 2.50 x 2.00mm - 4-VDFN.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com AMPDDFH-A13 280
    • 1 -
    • 10 -
    • 100 $2.23
    • 1000 $2.05
    • 10000 $1.9
    		Buy Now

    Abracon Corporation AMPDEFH-A13

    Frequency Selectable Mems Oscilator - XO (Standard) - 6.1298496MHz - ±25 ppm - 1.71V to 3.63V - 1.3mA (Typ) - 3.20 x 2.50mm - 4-VDFN.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com AMPDEFH-A13 220
    • 1 -
    • 10 -
    • 100 $0.74
    • 1000 $0.72
    • 10000 $0.65
    		Buy Now

    A13E IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    intel 8097 microcontroller

    Abstract: bbc 598 479 DIODE 8097 microcontroller architecture and details connector pinout intel 8096 microcontroller pot intel 8096 assembly language intel 8061 P82510 80C196KB hall ic a03e
    Text: EV80Cl96KB Evaluation Board User’s Manual bier Number 270738-( O] EV80C196KB Microcontroller Evaluation Board Release 001 February 20,1989 Copyright 1989, Intel Corporation Intel Corporation makes no warranty of any kind with regard to this material, including, but not limited


    Original     		PDF EV80Cl96KB EV80C196KB USA/297 intel 8097 microcontroller bbc 598 479 DIODE 8097 microcontroller architecture and details connector pinout intel 8096 microcontroller pot intel 8096 assembly language intel 8061 P82510 80C196KB hall ic a03e

    po109

    Abstract: amd fch 1334 193 ec5 CNT17 FRC5 TCS10 FR20 MB91191 MB91192 0047F
    Text: FUJITSU SEMICONDUCTOR CM71-10113-1E CONTROLLER MANUAL FR20 32-Bit Micro Controller MB91191/MB91192 Series Hardware Manual FR20 32-Bit Micro Controller MB91191/MB91192 Series Hardware Manual FUJITSU LIMITED PREFACE • Purpose of This Document and Intended Reader


    Original     		PDF CM71-10113-1E 32-Bit MB91191/MB91192 MB91191 MB91192. po109 amd fch 1334 193 ec5 CNT17 FRC5 TCS10 FR20 MB91192 0047F

    ALI M 3329 B1

    Abstract: PROCESSOR ALI 3329 R01DS0052EJ R01UH0033EJ ali m 3329 R5F562N8BDFP LGA-85 R5F56218 r5f56218bdfp ALI M 3329 d1
    Text: User’s Manual 32 Cover RX62N Group, RX621 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series Preliminary Specification This is a Preliminary specification and is subject to change. All information contained in these materials, including products and product specifications,


    Original     		PDF RX62N RX621 32-Bit RX600 R01UH0033EJ0130 ALI M 3329 B1 PROCESSOR ALI 3329 R01DS0052EJ R01UH0033EJ ali m 3329 R5F562N8BDFP LGA-85 R5F56218 r5f56218bdfp ALI M 3329 d1

    UDC 1200

    Abstract: TA 8275h 4019 data TTL 1980 131-6 bj 028 BCM 2836 RX62N 16-1-223 resistor DTC 164213 STPA2
    Text: User’s Manual 32 Cover RX62N Group, RX621 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series Preliminary Specification This is a Preliminary specification and is subject to change. All information contained in these materials, including products and product specifications,


    Original     		PDF RX62N RX621 32-Bit RX600 R01UH0033EJ0120 UDC 1200 TA 8275h 4019 data TTL 1980 131-6 bj 028 BCM 2836 16-1-223 resistor DTC 164213 STPA2

    REJ09B0435

    Abstract: 27611 power transistor transistor full 2000 to 2012 ta 8264h R5F56108 IR107 RX621 transistor 27611 transistor A 27611 3PA2-A2
    Text: User’s Manual 32 RX610 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original     		PDF RX610 32-Bit RX600 purchasing363, R01UH0032EJ0110 REJ09B0435 27611 power transistor transistor full 2000 to 2012 ta 8264h R5F56108 IR107 RX621 transistor 27611 transistor A 27611 3PA2-A2

    T605L

    Abstract: No abstract text available
    Text: HOLTEK H r 3 Series of Decoders Features • • • • • • • O perating voltage: 2.4V~12V Low power and high noise im m unity CM OS technology Low stan db y current C apable of decoding 18 bits of inform ation P a irs with H O L T E K ’s 3 18 series of encoders


    OCR Scan     		PDF HT651 HT658 PIC-12043T/PIC-12043C RE-99 T605L

    A13E

    Abstract: a13e ic
    Text: R E V IS IO N S ZONE D E S C R IP T IO N LTR H i R L D R A W ij c r R J l O B S O L E T E £ Z .& J L 1— • N e w W T H O U Ï P ts -2 f ie v / A .P —► } I L • Z .5 ’ 6 j~*-4 I ^ , A 5 TÆ 6 /n / 3 6 A D IZ 5 3 - Cp s - w - p y 1 * & + ' / / ’> w i -


    OCR Scan     		PDF 030CT01 0G3C-233-01 A13EslG 5823S5I A13E a13e ic

    Untitled

    Abstract: No abstract text available
    Text: EPSON P F 756-02 SRM20512LLMT85/10 512K-Bit Static RAM • Industrial Tem perature Range • L o w Supply C urrent •A c c e s s Time 85ns/100ns • 6 5 ,5 3 6 W ordsx8-bit Asynchronous I DESCRIPTION The SRM20512LLMT85/1O is a 65,536 wordsx8-bit asynchronous, static, random access memory on a monolithic


    OCR Scan     		PDF SRM20512LLMT85/10 512K-Bit 85ns/100ns SRM20512LLMT85/1O

    5 pin A13E

    Abstract: A12E 7C166 Cypress 7C166 7c164-15 7C164-12 7C164 a13e
    Text: CY7C164 CY7C166 Ì CYPRESS SEMICONDUCTOR 16Kx 4 Static RAM Features Functional Description • High speed — IS ns The CY7C164and CY7C166 are high-per­ formance CMOS static RAMs organized as 16,384 by 4 bits. Easy memory expan­ sion is provided by an active LOW chip en­


    OCR Scan     		PDF CY7C164 CY7C166 7C166) acY7C164-- CY7C164-- CY7C166-12PC 5 pin A13E A12E 7C166 Cypress 7C166 7c164-15 7C164-12 7C164 a13e

    Untitled

    Abstract: No abstract text available
    Text: Preliminary i w o a MX83L3810 c Mask ROM IB/16 Bit Output ORDER INFORMATION FEATURES • Bit organization 2M x 16 word mode) • Fast access time Random access: 120ns (max.) Operating: 40mA • Current Part No. Access Time Package MX23L3210MC-12 120ns 44 pin SOP


    OCR Scan     		PDF MX83L3810 IB/16 120ns MX23L3210MC-12 MX23L3210MC-15 150ns MX23L3210TC-12

    Untitled

    Abstract: No abstract text available
    Text: Tem ic HM 65789 MATRA MHS 16 K x 4 High Speed CMOS SRAM with Output Enable Introduction The HM 65789 is a high speed CMOS static RAM organized as 16384 x 4 bits. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 15 ns are available with maximum


    OCR Scan     		PDF 0DD5447

    A13E

    Abstract: orion unilab A11E unilab unilab 8620 A10E 5 pin A13E af toolkit A12E 8420 cpu
    Text: 17E D ZILOG INC •nfl4QM3 OOCHSSb 0 P r e lim in a r y P r o d u c t S p e c ific a tio n T M 9 - H - 0 7 Z86C27EAB E m u l a t io n A d a p t e r B o a r d May 1989 FEATURES • Z86C9708PSC 8 MHz ROM-less device. ■ On-board CPU Crystal and VideoL-Coscillatorcircuitsjumper selectable.


    OCR Scan     		PDF Z86C27EAB Z86C9708PSC 27C64/27C256 Z86C27 Z86C27EAB Z86C97 Z86C2708EAB A13E orion unilab A11E unilab unilab 8620 A10E 5 pin A13E af toolkit A12E 8420 cpu

    TSOP32-P-820-L

    Abstract: 5 pin A13E
    Text: OKI Semiconductor MSM82V1001LP 131,072-Word x 8-B it CMOS STATIC RAM DESCRIPTION The MSM52V1001LP is a 131,072-word by 8-bit CMOS static RAM featuring 3.0 V to 3.6 V power supply operation in the range of -40 "C to 85,'C and direct LVCMOS input/output compatibility.


    OCR Scan     		PDF MSM82V1001LP 072-Word MSM52V1001LP MSM52V1001 TSOP32-P-820-L 5 pin A13E

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK5T81OOOATM/AYM/AM/ATN/AYN -10LLX/12LLX 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATM/AYM/AM/ATN/AYN is a high speed CMOS static RAM organized as 131072words by 8-bits. Special feature are low power consumption and high speed.


    OCR Scan     		PDF CXK5T81OOOATM/AYM/AM/ATN/AYN -10LLX/12LLX 131072-word CXK5T81 131072words -10LLX -12LLX

    2183A

    Abstract: No abstract text available
    Text: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V


    OCR Scan     		PDF KM68V1000C, KM68U1000C 128Kx8 KM68V1000C 32-SOP, 32-TSOP 32-sTSOP 2183A

    Untitled

    Abstract: No abstract text available
    Text: EPSON SRM20V1OOLLMT7 1M-Bit Static RAM • DESCRIPTION • • • • • Low Supply Voltage Wide Temperature Range Low Supply Current Access Time 70ns 2.7V 131 Wordsx8-Bit Asynchronous The SRM20V100LLMT7 is an 131,072 wordsx8-bit asynchronous, static, random access memory on a monolithic


    OCR Scan     		PDF SRM20V1OOLLMT7 SRM20V100LLMT7

    TC57H1025AD-55

    Abstract: No abstract text available
    Text: 1 M EG A BIT 65,536 W O R D x 16 BIT HIGH SPEED CMOS U.V. ERASABLE AND ELECTRICALLY PROGRAMM ABLE READ ONLY M E M O R Y DESCRIPTION The TC57H1025AD is a 65,536 word X 16 bit high speed CMOS ultraviolet light erasable and electrically programmable read only memory. The TC57H1025AD is JEDEC standard pin


    OCR Scan     		PDF TC57H1025AD 60mA/lMHz TC57H1025AD. TC57H1025AD-55 DIP40-G-600A TC57H1025AD-55

    Untitled

    Abstract: No abstract text available
    Text: EPSON SRM20V1OOLLMX7 1M-Bit Static RAM • DESCRIPTION • • • • • Low Supply Voltage Wide Temperature Range Low Supply Current Access Time 70ns 2.7V 131 Wordsx8-Bit Asynchronous The SRM20V100LLMX7 is an 131,072 wordsx8-bit asynchronous, static, random access memory on a monolithic


    OCR Scan     		PDF SRM20V1OOLLMX7 SRM20V100LLMX7

    KM6 II

    Abstract: KM68U4000A
    Text: KM6 1 6 U 4 0 0 0 A CMOS SRAM ELECTRONICS 256Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 256Kx16 • Power Supply Voltage KM68V4000A Family : 3.3 +/- 0.3V KM68U4000A Family : 3.0 +/- 0.3V


    OCR Scan     		PDF 256Kx16 256Kx16 KM68V4000A KM68U4000A 44-TSOP KM616V4000A KM616U4000A BBBBBBBB0B0B0B00B0B0B0 KM616U4000A KM6 II

    MC68HC11

    Abstract: MC68HC24 ADI1046R2 MC146805E2 MC68HC01 3ad4 3AD5 MC68HC24/D
    Text: Order this data sheet by MC68HC24/D MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M C68HC24 Advance Information Port Replacem ent Unit P R U The MC68HC24 is a peripheral device which replaces ports B and C of the MC68HC11 microcomputer (MCU). These ports are lost when the MCU is placed in the expanded or


    OCR Scan     		PDF MC68HC24/D MC68HC24 MC68HC11 A18615-2 MC68HC24/D ADI1046R2 MC146805E2 MC68HC01 3ad4 3AD5

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands


    OCR Scan     		PDF HY29F040 32-Pin P-121, T-121, R-121 P-12E,

    Untitled

    Abstract: No abstract text available
    Text: SN74ACT3638 512 x 32 x 2 C L O C K E D B I D I R E C T I O N A L FI RST-I N, F I R S T - O U T M E M O R Y S C A S 228C -JU N E 1 9 9 2 - REVISED SEPTEMBER 1995 F r e e - R u n n i n g C L K A and C L K B Can Be IRA, O R A , AEA , and A F A Flags A s y n c h r o n o u s or C o i n c i d e n t


    OCR Scan     		PDF SN74ACT3638

    A18E

    Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L A17OI
    Text: LH28F320S3-L/S3H-L PRELIMINARY SHARP LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F320S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide


    OCR Scan     		PDF F320S3- LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L H28F320S3XX-L11 LH28F320S3XX-L14 SSOP056-P-0600) FBGA080/064-P-0818) A18E 56-PIN LH28F320S3H-L LH28F320S3-L A17OI

    BFJ 64

    Abstract: No abstract text available
    Text: 32 0 S 5 - L _ S 5 H- L 7 / 1 5 / 9 8 7 : 5 7 PM P age 1 SHARP LH28F320S5-L/S5H-L LH28F320S5-L/S5H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION High performance read access time The LH 28F320S 5-L/S5H -L flash m em ories with


    OCR Scan     		PDF LH28F320S5-L/S5H-L 28F320S 28F320S5XX SSOP056-P-0600) FBGA080/064-P-0818) BFJ 64