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    A12W-K PIN OUT Search Results

    A12W-K PIN OUT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    A12W-K PIN OUT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a888 513

    Abstract: PHCR 359 IRPF 250 N RCD30 Hitachi DSA0093 SH7709 E555
    Text: SH7709 Hardware Manual ADE-602-123A Rev. 3.0 4/13/99 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the


    Original
    PDF SH7709 ADE-602-123A SH7709 FP-208C) a888 513 PHCR 359 IRPF 250 N RCD30 Hitachi DSA0093 E555

    0 221 122 379

    Abstract: Hitachi DSA00279
    Text: SH7709 Hardware Manual ADE-602-123B Rev. 3.0 4/14/99 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained


    Original
    PDF SH7709 ADE-602-123B FP-208C FP-208C) SH7709 0 221 122 379 Hitachi DSA00279

    Transistor mcr 22-8 413

    Abstract: a888 513 seven segment data sheet 10-pa5 bt 1488 IRPF 264 AMD PCMCIA Flash Memory Card diode marking code 4n pdcr 921 SH7000 SH7600
    Text: SH7709 Hardware Manual ADE-602-123 Rev. 2.0 3/13/98 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the


    Original
    PDF SH7709 ADE-602-123 FP-208C) Transistor mcr 22-8 413 a888 513 seven segment data sheet 10-pa5 bt 1488 IRPF 264 AMD PCMCIA Flash Memory Card diode marking code 4n pdcr 921 SH7000 SH7600

    HD6417709 SH3

    Abstract: HD6417709A HD6417707 hd6417709 SH7709A PHCR 359 a888 513 SH7707 EEPROM AMD 705 IRPF 250 N
    Text: SH7709 Hardware Manual ADE-602-123B Rev. 2.0 3/22/99 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained


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    PDF SH7709 ADE-602-123B 15-Mask HD6417709 SH3 HD6417709A HD6417707 hd6417709 SH7709A PHCR 359 a888 513 SH7707 EEPROM AMD 705 IRPF 250 N

    AEB DP1

    Abstract: 0588 82385 A12A D815
    Text: Q S88180, Q QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses QS88180 Q S 88160 Prelim inary FE A T U R E S /B E N E FIT S • • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables for byte/word read/write 20ns/25 ns/30ns/35 ns Taa commercial


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    PDF QS88180, QS88160 4Kx16/18 QS88180 QS88160 4Kx18/16 20ns/25 ns/30ns/35 ns/30ns/35/45 MIL-STD-883, AEB DP1 0588 82385 A12A D815

    Untitled

    Abstract: No abstract text available
    Text: QS88180, ô QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses QS88180 QS88160 Preliminary FEATURES/BENEFITS • • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables for byte/word read/write 20ns/25 ns/30ns/35 ns Taa commercial


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    PDF QS88180, QS88160 4Kx16/18 QS88180 4Kx18/16 20ns/25 ns/30ns/35 ns/30ns/35/45 MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: QS88180, Q QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses QS88180 QS88160 FEATURES/BENEFITS • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables for byte/Word read/write 20ns/25 ns/30ns/35 ns Taa Available in 52-pin PLCC


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    PDF QS88180, QS88160 4Kx16/18 QS88180 4Kx18/16 20ns/25 ns/30ns/35 52-pin 16-bit

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC IME D fallisi O G O i m b S T - ^ Z S - I Z DUAL 4 K x16 SRAM, SINGLE 8 K x 1 6 SRAM CACHE DATA STATIC RAM CONFIGURABLE CACHE DATA SRAM FEATURES PIN ASSIGNMENT Top View • Operates as two 4K x l 6 SRAMs with common addresses and data; also configurable as a single


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    PDF T-46-23-12 A0-A11 0001M2M

    A011 transistor

    Abstract: No abstract text available
    Text: QS88180, QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses Q 7 QS88180 Q S88160 Preliminary FEATURES/BENEFITS • • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables 1or byte/word read/write 20ns/25 ns/30ns/35 ns Taa commercial


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    PDF QS88180, QS88160 4Kx16/18 QS88180 S88160 4Kx18/16 20ns/25 ns/30ns/35 ns/30ns/35/45 MIL-STD-883, A011 transistor

    Untitled

    Abstract: No abstract text available
    Text: QS88180, Q QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses QS88180 QS88160 FEATURES/BENEFITS • Dual 4Kx18/16 allows 2-way set associative cache • Byte enables for byte/word read/write • 20ns/25 ns/30ns/35 ns Taa • Available in 52-pin PLCC


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    PDF QS88180, QS88160 4Kx16/18 QS88180 4Kx18/16 20ns/25 ns/30ns/35 52-pin 16-bit

    TC55187T

    Abstract: TC55187T-20 TC55187T-25
    Text: I TC 55187T—20, T C 5 5 1 8 7 T -2 5 , T C 5 5 1 8 7 T -3 0 2 - W A Y 4 ,0 9 6 W O R D S x 18 B IT S /8 ,1 9 2 W O R D S x 18 BITS C M O S STATIC CACHE D A T A R A M DESCRIPTION The TC55187T is a 147,456 bits high-speed static RAM which can be user-configured either as 2-way


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    PDF 55187T--20, TC55187T TC55187T--20, TC55187T-25, 55187T-30 QFJ52-- TC55187T-20 TC55187T-25

    82385

    Abstract: TW 8816 OS8818 8818 c5t transistor NX18 QS8816 DPO/DSA70000B
    Text: QUALITY SEMICONDUCTOR INC. High-Speed CMOS Dual 4KX16/18 SRAM with Latched Addresses Q X16 SRAM QS8816/7 x18 SRAM ^ I h c e in f o r m a t i o n FEATURES/BENEFITS Dual 4Kx18 allows 2-way set associative cache Latched and unlatched A12 versions 20ns/25 ns/35 ns Taa, 8 ns Toe


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    PDF 4KX16/18 QS8816/7 4Kx18 20ns/25 ns/35 52-pin 16-bit QS8816, QS8817, QS8818, 82385 TW 8816 OS8818 8818 c5t transistor NX18 QS8816 DPO/DSA70000B

    a12w

    Abstract: 74LS373 PIN CONFIGURATION AND SPECIFICATIONS
    Text: M IC R O N MT56C0818 DUAL 4 K x 1 8 SRAM, SINGLE 8K x 18 SRAM CACHE DATA SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 18 SRAM s with common ad dresses and data; also configurable as a single 8K x 18 SRAM • Built-in input ad dress latches


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    PDF MT56C0818 52-Pin MT56C0B18 a12w 74LS373 PIN CONFIGURATION AND SPECIFICATIONS

    LT 543 IC pin diagram

    Abstract: IC SRAM 8K X 8 microprocessor 80386 pin out diagram
    Text: M IC R O N 1 MT56C0818 8K x 18, DUAL 4K x 18 CACHE DATA SRAM T CACHE DATA SRAM SINGLE 8K x18 SRAM, DUAL4 K x 18 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 18 SRAMs with common addresses and data; also configurable as a single 8K x 18 SRAM


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    PDF MT56C0818 52-Pin MT56C081B LT 543 IC pin diagram IC SRAM 8K X 8 microprocessor 80386 pin out diagram

    pin diagram of IC 74LS373

    Abstract: No abstract text available
    Text: M IC R O N MT56C0816 CACHE DATA SRAM DUAL 4Kx16 SRAM, SINGLE 8Kx16 SRAM CONFIGURABLE CACHE DATA SR A M FEATURES • O perates as two 4K x 16 SRAM s with common ad dresses and data; also configurable as a single 8K x 16 SRAM • Built-in input ad dress latches


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    PDF MT56C0816 4Kx16 8Kx16 52-Pin MT56C pin diagram of IC 74LS373

    mt90c

    Abstract: MT56C0816EJ-25 mt56c0816
    Text: MICRON TECHNOLOGY INC SSE T> WÊ blllSHT 0 0 0 3 ^ 3 7HT B U R N MT56C0816 8K x 16, DUAL 4K x 16 CACHE DATA SRAM V H C Z R O N CACHE DATA SRAM SINGLE 8Kx 16 SRAM, DUAL4KX16 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 16 SRAMs with common


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    PDF MT56C0816 DUAL4KX16 52-Pin MT56CO016 mt90c MT56C0816EJ-25

    MT56C0816

    Abstract: AW 55 IC LT 5251 80386 cache
    Text: M in P n M * ^ MT56C0816 8K x 16, DUAL 4K x 16 CACHE DATA SRAM CACHE DATA SRAM SINGLE 8Kx 16 SRAM, DUAL 4Kx16 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 16 SRAMs with common addresses and data; also configurable as a single 8K x 16 SRAM


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    PDF MT56C0816 52-pin MT56C0816EJ-25 4Kx16 AW 55 IC LT 5251 80386 cache

    RAS 0510

    Abstract: CS9203-CL sine wave generator using ic 555 musical SYNTHESIZER schematic musical applications of microprocessor drum sound ic
    Text: ^ M m ^ æ êt a CS9203 « f j v Semiconductor Corporation Advanced Music Synthesizer Features General Description • Polyphonic up to 32 notes • Multi-timbral up to 32 simultaneous timbres • 15 built-in synthesis algorithms • On-chip high speed adder,


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    PDF CS9203 8Mx12 CS9203 25Mb32M 100-pin R254b3B4 RAS 0510 CS9203-CL sine wave generator using ic 555 musical SYNTHESIZER schematic musical applications of microprocessor drum sound ic

    rca thyristor manual

    Abstract: HN623258 101490
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j


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    PDF

    101490

    Abstract: P22n HM50464P-12 50464 ram
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY


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    PDF ADE-40 101490 P22n HM50464P-12 50464 ram