A12A 24 Search Results

A12A 24 Result Highlights (5)

Part	Manufacturer	Description
10127905-A12A20DLF	Amphenol Communications Solutions	HPCE VT Receptacle with enhanced walls 28P20S
10127905-A12A30DLF	Amphenol Communications Solutions	HPCE VT Receptacle with enhanced walls 28P30S
10127905-A12A20ALF	Amphenol Communications Solutions	HPCE VT Receptacle with enhanced walls 28P20S
10139140A12A20DHLF	Amphenol Communications Solutions	HPCE VT Receptacle 28P20S
10127905-A12A20CLF	Amphenol Communications Solutions	HPCE VT Receptacle with enhanced walls 28P20S

A12A 24 Price and Stock

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Inventus Power MWA150024A-12A Desktop AC Adapters 24V 6.3A 150W 7.56 x 2.45 x 1.52
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MWA150024A-12A		128			1 $71.32 10 $68.46 100 $64.93 1000 $64.93 10000 $64.93	Buy Now
Inventus Power MWA220024A-12A Desktop AC Adapters 220W 24V 9.2A - MED CLASS I
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MWA220024A-12A		35			1 $100.96 10 $95.25 100 $90.23 1000 $90.23 10000 $90.23	Buy Now
ADLINK Technology Inc XEON E5-2658 v2 2.40GHz FC-LGA12A CPU - Central Processing Units CPU, Xeon E5-2658 v2, 2.40GHz, 10-Core, 25MB SmartCache, Ivy Bridge EP, CM8063501293200 SR1A0, Step:M1, MM# 929993
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	XEON E5-2658 v2 2.40GHz FC-LGA12A					1 $2180.32 10 $2180.32 100 $2180.32 1000 $2180.32 10000 $2180.32	Get Quote
OTTO Engineering Inc HTWF-1A12A24A Industrial Hall Effect / Magnetic Sensors Thumbwheel +/- 30o 0.5-4.5VDC Pddl
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HTWF-1A12A24A					1 $119.95 10 $111.59 100 $97.08 1000 $97.08 10000 $97.08	Get Quote
Sager	HTWF-1A12A24A				3	1 - 10 $85 100 $72.22 1000 $63.31 10000 $63.31	Buy Now
PanJit Semiconductor P4SMA12AS_R1_00001 ESD Protection Diodes / TVS Diodes 400W,Transient Voltage Suppressors,SMA,10.2V,UNI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	P4SMA12AS_R1_00001					1 $0.3 10 $0.2 100 $0.135 1000 $0.098 10000 $0.074	Get Quote

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A12A 24 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: XS1-A12A-128-FB217 Datasheet 2013/12/09 XMOS 2013, All Rights Reserved Document Number: X9253, XS1-A12A-128-FB217 Datasheet 1 Table of Contents 1 xCORE Multicore Microcontrollers . . 2 XS1-A12A-128-FB217 Features . . . 3 Pin Configuration . . . . . . . . . . .	Original	XS1-A12A-128-FB217 X9253,	PDF
A17a Abstract: diode A14A a43a SMA33CA A6.5CA SMA12CA a13a A45A A78A A18A marking Text: P4SMA series Compact Technology Peak power dissipation Breakdown Voltage Transient Voltage Suppressors 400W 5.0~ 190V SMA FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time	Original	2002/95/EC A17a diode A14A a43a SMA33CA A6.5CA SMA12CA a13a A45A A78A A18A marking	PDF
a13b 5 pin Abstract: A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin Text: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES IDTAMB0480 PRODUCT BRIEF FEATURES: DESCRIPTION: • • • • • The fully buffered dual in-line memory module FB-DIMM is the next	Original	IDTAMB0480 AMB0480xxRJ8 AMB0480xxRJ AMB0480xxRH8 AMB0480xxRH a13b 5 pin A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin	PDF
Untitled Abstract: No abstract text available Text: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES DESCRIPTION: FEATURES: Advanced Memory Buffer for Fully buffered DIMMs 3.2 and 4 Gbit/s serial speeds DDR2-533 and 667 DRAM	Original	IDTAMB0480 DDR2-533 AMB0480xxRJ8 AMB0480xxRJ AMB0480xxRH8 AMB0480xxRH	PDF
A13B Abstract: DQ17A-DQ0A A14B DQ4a DQ11A Text: July 2004 Preliminary Information AS9C25512M2018L 2.5V 512K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288 x 18 bits	Original	AS9C25512M2018L 19-bit A13B DQ17A-DQ0A A14B DQ4a DQ11A	PDF
203d6 Abstract: No abstract text available Text: Bowmar/lHfhite 128K x 8 BIT SRAM C8-M128 SERIES Technology PIN DIAGRAM NC □ 1 A16 C 2 A14 □ A12 □ A7 32 3 V c c 31 □ A 15 3 30 3 N C 4 24 □ W E c 5 6 28 3 A 13 27 □ A 8 A6 c A5 c A4 A3 c 8 c 9 c 10 A1 □ 11 AD □ 12 21 DO □ 13 20 3 D6 D1 □	OCR Scan	C8-M128 120nS 15A14 12A10-- 203d6	PDF
Untitled Abstract: No abstract text available Text: 3ÔE D MICRON TECHNOLOGY INC blllSM'l QGQ3G2Q 1 • MRN r - % - n - ìz aìa r CACHE DATA STATIC RAM DUAL 4Kx 18 SRAM, SINGLE 8Kx 18 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES PIN ASSIG N M EN T Top View • Automatic WRITE cycle completion • Operates as two 4K x 18 SRAMs with common	OCR Scan	33MHz 25MHz	PDF
A91A Abstract: A18A a39a mur 4520 A30A A11A a68a a75a btp 506 A36A Text: TPSMA6.8 THRU TPSMA43A AUTOMOTIVE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6 . 8 - 4 3 . 0 Volts 400 Watt Peak Pulse Power_ _FEATURES D O -2 1 4 A C — ' t I .0 7 8 1 .3 8 . 0 9 0 ( 2 .2 9 ) V L -_ _ J	OCR Scan	TPSMA43A A91A A18A a39a mur 4520 A30A A11A a68a a75a btp 506 A36A	PDF
DUP1 Abstract: No abstract text available Text: FIJCRON TECHNOLOGY INC MICRON SSE T> • blllSMT DD037M3 DT4 ■ URN M T56C 2818 8 K x 18, DUAL 4 K x 18 C A CH E DATA SRAM ■ - ; CACHE DATA -0 4 - q q a i i	OCR Scan	DD037M3 8Kx18 66MHz b00D37S2 DUP1	PDF
mt90c Abstract: MT56C0816EJ-25 mt56c0816 Text: MICRON TECHNOLOGY INC SSE T> WÊ blllSHT 0 0 0 3 ^ 3 7HT B U R N MT56C0816 8K x 16, DUAL 4K x 16 CACHE DATA SRAM V H C Z R O N CACHE DATA SRAM SINGLE 8Kx 16 SRAM, DUAL4KX16 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 16 SRAMs with common	OCR Scan	MT56C0816 DUAL4KX16 52-Pin MT56CO016 mt90c MT56C0816EJ-25	PDF
Untitled Abstract: No abstract text available Text: M IC R O N * MT56C2818 8 K x 18, DUAL 4 K x 18 CACHE DATA SRAM CACHE DATA SRAM SINGLE 8Kx18 SRAM, DUAL 4KX18SRAM CONFIGURABLE CACHE DATA SRAM FEATURES PIN ASSIGNMENT Top View • A u tom atic W RITE cycle com pletion • O p erates a s tw o 4K x 18 SR A M s w ith com m on	OCR Scan	MT56C2818 8Kx18 4KX18SRAM	PDF
MARKING CODE LT DO-214AC Abstract: marking 15C SMA TVS IEC801-2 IEC801-4 P4SMA10CA P4SMA220CA p4sma75a Text: P4SMA6.8A thru P4SMA220CA 5YMSEMI semicomductor Surface Mount Transient Voltage Suppressors Peak Pulse Power 400W Breakdown Voltage 6.8 to 220V Features_ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ P la s tic pa cka g e has U n d e rw rite rs L a b o ra to ry F lam m a bility	OCR Scan	P4SMA220CA IEC801-2) IEC801-4) 10/1000us 10psec. 50mVpp MARKING CODE LT DO-214AC marking 15C SMA TVS IEC801-2 IEC801-4 P4SMA10CA P4SMA220CA p4sma75a	PDF
ATT7C314J Abstract: No abstract text available Text: iATsT Data Sheet November 1991 rMicroelectronics A TT7C 314J S ta tic , D u al-P o rt RAM 72K 8192 w ords x 9 b its Benefits Features • Full internal contention resolution transparent to the user ■ Word-size expansion capability ■ Parity bit available with 9-bit organization	OCR Scan	ATT7C31ample, ATT7C314J 68-Pin	PDF
Untitled Abstract: No abstract text available Text: QS88180, Q QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses QS88180 QS88160 FEATURES/BENEFITS • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables for byte/Word read/write 20ns/25 ns/30ns/35 ns Taa Available in 52-pin PLCC	OCR Scan	QS88180, QS88160 4Kx16/18 QS88180 4Kx18/16 20ns/25 ns/30ns/35 52-pin 16-bit	PDF

Untitled Abstract: No abstract text available Text: COMPONENT RESEARCH CO I bSE D • 5303^11 00DQ70? OTT ^ 1 2 Component Research METALLIZED POLYCARBONATE CAPACITOR J- f l- t S PRODUCT FEATURES { 7 i" y 1.0 /nF 30VDC ACTUAL SIZE CAPACITOR QUALIFIED TO MIL-C-83421/01 FAILURE RATE S. HERMETICALLY SEALED, HIGH RELIABILITY SCREENED FOR CRITICAL AEROSPACE APPLICATIONS.	OCR Scan	00DQ70? 30VDC MIL-C-83421/01 22VRMS 240VRMS 400Hz. 40KHz 30VDC 400VDC.	PDF
5DOF Abstract: A12U HY628400 HAB 20-S Text: HY628400 Series » H Y U N D A I 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit	OCR Scan	HY628400 512Kx 288x8-bits speed-55/70/85/100ns 00b353 1DE01 -11-MAY95 5DOF A12U HAB 20-S	PDF
Untitled Abstract: No abstract text available Text: QS88180, ô QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses QS88180 QS88160 Preliminary FEATURES/BENEFITS • • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables for byte/word read/write 20ns/25 ns/30ns/35 ns Taa commercial	OCR Scan	QS88180, QS88160 4Kx16/18 QS88180 4Kx18/16 20ns/25 ns/30ns/35 ns/30ns/35/45 MIL-STD-883,	PDF
R343C Abstract: MIL-STD-883 Method 1019 UT28F256 Text: Military Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Preliminary Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER May 1994 FEATURES □ Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmers	OCR Scan	UT28F256 140mA MIL-STD-883, MIL-I-38535 R343C MIL-STD-883 Method 1019	PDF
AEB DP1 Abstract: 0588 82385 A12A D815 Text: Q S88180, Q QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses QS88180 Q S 88160 Prelim inary FE A T U R E S /B E N E FIT S • • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables for byte/word read/write 20ns/25 ns/30ns/35 ns Taa commercial	OCR Scan	QS88180, QS88160 4Kx16/18 QS88180 QS88160 4Kx18/16 20ns/25 ns/30ns/35 ns/30ns/35/45 MIL-STD-883, AEB DP1 0588 82385 A12A D815	PDF
Untitled Abstract: No abstract text available Text: 4<ÌE D P r e v ie w • SöböMSb DDGlObl 5 h 5 ■ MMHS I H I I f T M S e p te m b e r 1 9 9 0 NATRA M H S HM 65688 DATASHEET 16kx4 ULTIMATE CMOS SRAM FEATURES ACCESS TIME MILITARY/INDUSTRIAL : 45/55 ns max COMMERCIAL : 35/45 ns (max) VERY LOW POWER CONSUMPTION	OCR Scan	16kx4	PDF
Untitled Abstract: No abstract text available Text: bEM'ìflSS 00SH2S3 MITSUBISHI LSIs 3D7 • M I T I M5M51008AP,FP,VP,RV-55L,-55LL 1048576-BIT 131072-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M 5 M 5 1 0 0 8 A P , FP, VP, RV are a 1 0 4 8 5 7 6 -b it CMOS PIN CONFIGURATION (TOP VIEW) static R A M organized as .131072 w ord by 8 - bit w hich are	OCR Scan	00SH2S3 M5M51008AP RV-55L -55LL 1048576-BIT 131072-WORD	PDF
A17a Abstract: HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A HY628400 tsop 338 IR 1A13 DA16 Text: HY628400 Series •HYUNDAI 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit	OCR Scan	HY628400 512KX 288x8-bits speed-55/70/85/100ns 1DE01 -11-MAY95 A17a HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A tsop 338 IR 1A13 DA16	PDF
A011 transistor Abstract: No abstract text available Text: QS88180, QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses Q 7 QS88180 Q S88160 Preliminary FEATURES/BENEFITS • • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables 1or byte/word read/write 20ns/25 ns/30ns/35 ns Taa commercial	OCR Scan	QS88180, QS88160 4Kx16/18 QS88180 S88160 4Kx18/16 20ns/25 ns/30ns/35 ns/30ns/35/45 MIL-STD-883, A011 transistor	PDF
F0016 Abstract: No abstract text available Text: “H Y U N D A I H Y 6 2 8 1 0 0 A S e r ie s 128K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit	OCR Scan	HY628100A HY628100AP HY628100ALP HY628100ALLP HY628100AG HY628100ALG HY628100ALLG HY628100AT1 F0016	PDF

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A12A 24 Search Results

A12A 24 Result Highlights (5)

A12A 24 Price and Stock

Inventus Power MWA150024A-12A

Inventus Power MWA220024A-12A

ADLINK Technology Inc XEON E5-2658 v2 2.40GHz FC-LGA12A

OTTO Engineering Inc HTWF-1A12A24A

PanJit Semiconductor P4SMA12AS_R1_00001

A12A 24 Datasheets Context Search

Untitled

A17a

a13b 5 pin

Untitled

A13B

203d6

Untitled

A91A

DUP1

mt90c

Untitled

MARKING CODE LT DO-214AC

ATT7C314J

Untitled

Untitled

5DOF

Untitled

R343C

AEB DP1

Untitled

Untitled

A17a

A011 transistor

F0016