A1241 TRANSISTOR Search Results

A1241 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

A1241 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor a1241 Abstract: a1241 A1241 transistor a1241 semiconductor transistor a1241 datasheet 2SA1241 2SC3076 a1241 pnp a124* transistor Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	PDF	2SA1241 2SC3076 transistor a1241 a1241 A1241 transistor a1241 semiconductor transistor a1241 datasheet 2SA1241 2SC3076 a1241 pnp a124* transistor
transistor a1241 Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	PDF	2SA1241 2SC3076 transistor a1241 a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076
Untitled Abstract: No abstract text available Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	PDF	2SA1241 2SC3076
transistor a1241 Abstract: a1241 transistor a1241 datasheet 2SA1241 2SC3076 a1241 semiconductor a124* transistor A12-41 Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) · Excellent switching time: tstg = 1.0 µs (typ.)	Original	PDF	2SA1241 2SC3076 transistor a1241 a1241 transistor a1241 datasheet 2SA1241 2SC3076 a1241 semiconductor a124* transistor A12-41
a1241 semiconductor Abstract: transistor a1241 a1241 Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	PDF	2SA1241 2SC3076 a1241 semiconductor transistor a1241 a1241
transistor a1241 Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 A1241 transistor A12-41 Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	PDF	2SA1241 2SC3076 transistor a1241 a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 A1241 transistor A12-41
Untitled Abstract: No abstract text available Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	PDF	2SA1241 2SC3076
transistor a1241 Abstract: a1241 semiconductor a1241 transistor a1241 datasheet 2SA1241 2SC3076 Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	PDF	2SA1241 2SC3076 transistor a1241 a1241 semiconductor a1241 transistor a1241 datasheet 2SA1241 2SC3076
Untitled Abstract: No abstract text available Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit：mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	PDF	2SA1241 2SC3076
transistor a1241 Abstract: transistor a1241 datasheet a1241 semiconductor a1241 transistor 2sa1241 2SA1241 2SC3076 Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit：mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	PDF	2SA1241 2SC3076 transistor a1241 transistor a1241 datasheet a1241 semiconductor a1241 transistor 2sa1241 2SA1241 2SC3076
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	PDF	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

45F122 Abstract: GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322 Text: 東芝半導体製品総覧表 2010 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	PDF	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 45F122 GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322
A1241 Abstract: c4684 2_s transistors c3072 B834 SA1357 c4793 Text: S urface Mo unt Device 4 Power Mold Transistors (D PACK) E lectrical C h a ra cte ristics {T a= 2 5°C ) A p plication T yp e No. VCEO (V) Ic (A) Pc (W ) Pc* (W ) Tj (°C) C o m plem en tary 2 S A 1225 D rive r stage. Pow er am plification. -160 -1.5 1.0	OCR Scan	PDF	A1241 2SD1221 2SC4681 2SC4685 c4684 2_s transistors c3072 B834 SA1357 c4793