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    A11136 Search Results

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    A11136 Price and Stock

    LEDIL CA11136_LO2-W

    LENS CLEAR 44DEG WIDE ADH TAPE
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    DigiKey CA11136_LO2-W Bulk 90
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    Avnet Americas CA11136_LO2-W Reel 180
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    Mouser Electronics CA11136_LO2-W
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    Newark CA11136_LO2-W Bulk 180
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    Bristol Electronics CA11136_LO2-W 12 3
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    Avnet Silica CA11136_LO2-W 7 Weeks 180
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    EBV Elektronik CA11136_LO2-W 720 7 Weeks 180
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    New Advantage Corporation CA11136_LO2-W 540 1
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    A11136 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ta 8742 IC

    Abstract: A1113 55GN01FA
    Text: 55GN01FA 注文コード No. N A 1 1 1 3 三洋半導体データシート N 55GN01FA NPN エピタキシァルプレーナ型シリコントランジスタ UHF低雑音広帯域増幅用 特長 ・しゃ断周波数が高い:fT=5.5GHz typ。 ・高利得である


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    PDF 55GN01FA S21e2 400MHz S21e21 S21e22 A1113-6/6 ta 8742 IC A1113 55GN01FA

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1113A 55GN01FA RF Transistor http://onsemi.com 10V, 70mA, fT=5.5GHz, NPN Single SSFP Features • • • • High cut-off frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=11dB typ f=1GHz =19dB typ (f=400MHz) Ultrasmall package permitting applied sets to be small and slim


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    PDF ENA1113A 55GN01FA S21e2 400MHz) A1113-9/9

    Untitled

    Abstract: No abstract text available
    Text: 55GN01FA Ordering number : ENA1113A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features • • • • High cut-off frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=11dB typ f=1GHz


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    PDF 55GN01FA ENA1113A 400MHz) A1113-9/9

    IC 8256

    Abstract: A1113
    Text: 55GN01FA Ordering number : ENA1113 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features • • • • High cut-off frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =11dB typ f=1GHz .


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    PDF ENA1113 55GN01FA S21e2 400MHz) A1113-8/8 IC 8256 A1113

    A11141

    Abstract: LA6542 ch34on
    Text: Ordering number : EN5717 LA6542M Monolithic Linear IC LA6542M 4-Channel Bridge BTL Driver for CD-ROM Overview Package Dimensions The LA6542M is a 4-channel bridge (BTL) driver developed for CD-ROM applications. unit: mm 3204-MFP36SLF [LA6542] 19 • Integrated muting circuit


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    PDF EN5717 LA6542M LA6542M 3204-MFP36SLF LA6542] MFP36SLF A11141 LA6542 ch34on

    LA6542M

    Abstract: S2-24V
    Text: Ordering number : EN5717 LA6542M Monolithic Linear IC LA6542M 4-Channel Bridge BTL Driver for CD-ROM Overview Package Dimensions The LA6542M is a 4-channel bridge (BTL) driver developed for CD-ROM applications. unit: mm 3204-MFP36SLF [LA6542] 19 • Integrated muting circuit


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    PDF EN5717 LA6542M LA6542M 3204-MFP36SLF LA6542] MFP36SLF S2-24V

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN5717 LA6542M Monolithic Linear IC LA6542M 4-Channel Bridge BTL Driver for CD-ROM Overview Package Dimensions The LA6542M is a 4-channel bridge (BTL) driver developed for CD-ROM applications. unit: mm 3204-MFP36SLF [LA6542] 19 • Integrated muting circuit


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    PDF EN5717 LA6542M LA6542M 3204-MFP36SLF LA6542] MFP36SLF

    55GN01FA-TL-H

    Abstract: 7308 IC
    Text: 55GN01FA Ordering number : ENA1113A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features • • • • High cut-off frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=11dB typ f=1GHz


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    PDF ENA1113A 55GN01FA S21e2 400MHz) A1113-9/9 55GN01FA-TL-H 7308 IC

    a1113

    Abstract: application of ic 7489 55GN01FA
    Text: 55GN01FA Ordering number : ENA1113 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features • • • • High cut-off frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =11dB typ f=1GHz .


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    PDF 55GN01FA ENA1113 S21e2 400MHz) A1113-8/8 a1113 application of ic 7489 55GN01FA

    STT-106

    Abstract: No abstract text available
    Text: REV. S ta tu s A. Electrical specifications @ 25 ° C ISSUE 1 8 /8 /9 5 TS CD O 1. Leakage Inductance; 200 ^ H MAX 2. DC Resistance; Primary ( 1 - 2 ) 7.0 Q MAX Secondary ( 3 - 4 ) 7.0 0 MAX Tertiary ( 5 - 6 ) 7.0 Q MAX 3. Primary ET-constant; 2 8 0 V - f i s MIN


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    PDF P-A1-11369 ACAD\MXFMR\A1113691 STT-106

    STT-104

    Abstract: trigger transformer
    Text: REV. S ta tu s A. Electrical specifications @ 25 ° C ISSUE 1 8 /8 /9 5 TS o 1. Leakage Inductance; 25 /iH MAX 2. DC Resistance; Primary ( 1 - 2 ) 2.5 Q MAX Secondary ( 3 - 4 ) 2.5 0 MAX Tertiary ( 5 - 6 ) 2.5 Q MAX 3. Primary ET-constant; 9 0 V - ^ s MIN


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    PDF P-A1-11368 ACAD\MXFMR\A1113681 STT-104 trigger transformer

    Untitled

    Abstract: No abstract text available
    Text: REV. Statu s REVISION 0 8 / 0 4 / 9 6 TS REVISION A UPDATED TO NEW LABEL 1 2 / 0 6 / 9 5 TS REVISION B NEW FORMAT 0 7 / 1 7 / 9 6 TS V E R Y LOW PR O F ILE DRY S U P E R IO R P E R M E A B IL IT Y C O U P L IN G TE LE C O M M U N IC A TIO N TRANSFO RM ER W ITH


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    PDF

    CSA-C22

    Abstract: T1104 K 190.41 microtran
    Text: REV. S t a t u s REVISION 0 8 /0 4 /9 6 TS REVISION A UPDATED TO NEW LABEL 1 2 /0 6 /9 5 TS REVISION B NEW FORMAT 0 7 /1 7 /9 6 TS VERY LOW PROFILE DRY COUPLING TELECOMMUNICATION TRANSFORMER WITH SUPERIOR PERMEABILITY A. Electrical Specifications 25' C


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    PDF E138028 T1104 CSA-C22 T1104 K 190.41 microtran