d 009 401 04
Abstract: GWL8R000
Text: ENGINEERING BULLETIN Sprague-Goodman SG-207E Supercedes SG-207D MICROWAVE SAPPHIRE PISTONCAP TRIMMER CAPACITORS FEATURES • • • • Sapphire dielectric Very high Q at UHF and microwave frequencies Subminiature – smallest PISTONCAP® types Choice of 2 configurations and 6 mounting styles
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SG-207E
SG-207D
MIL-C-14409D
GNN1R200
GNN1R250
GWN2R500
GWN2R550
GWN4R500
GWN4R550
GWN8R000
d 009 401 04
GWL8R000
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d 009 401 04
Abstract: GUF1R200 GUF1R250 GWF2R500 GWF2R550 GWF4R500 GWF4R550 GWF8R000 GNV1R250 GUN1R250
Text: ENGINEERING BULLETIN Sprague-Goodman SG-207F Supercedes SG-207E MICROWAVE SAPPHIRE PISTONCAP TRIMMER CAPACITORS FEATURES • • • • Sapphire dielectric Very high Q at UHF and microwave frequencies Subminiature – smallest PISTONCAP® types Choice of 2 configurations and 6 mounting styles
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SG-207F
SG-207E
MIL-C-14409D
RatR550
GNN2R500
GNN2R550
GWN4R500
GWN4R550
GNN4R500
GNN4R550
d 009 401 04
GUF1R200
GUF1R250
GWF2R500
GWF2R550
GWF4R500
GWF4R550
GWF8R000
GNV1R250
GUN1R250
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C TV memory ic programme
Abstract: mitsubishi memory card busy 60 MF88M1-GMCAVXX 001FFFFH
Text: MITSUBISHI MEMORY CARD PRELIMINARY FLASH MEMORY CARDS MF82M1-GMCAVXX 8/16-bit Data Bus MF84M1-GMCAVXX Flash Memory Card MF88M1-GMCAVXX MF816M-GMCAVXX MF820M-GMCAVXX MF832M-GMCAVXX Connector Type MF82M1-GNCAVXX Two- piece 68-pin MF84M1-GNCAVXX MF88M1-GNCAVXX
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8/16-bit
MF82M1-GMCAVXX
MF84M1-GMCAVXX
MF88M1-GMCAVXX
MF816M-GMCAVXX
MF820M-GMCAVXX
MF832M-GMCAVXX
MF82M1-GNCAVXX
MF84M1-GNCAVXX
MF88M1-GNCAVXX
C TV memory ic programme
mitsubishi memory card busy 60
001FFFFH
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C TV memory ic programme
Abstract: d1340 MF816M-GMCAVXX MF816M-GNCAVXX MF820M-GMCAVXX MF820M-GNCAVXX MF82M1-GMCAVXX MF82M1-GNCAVXX mitsubishi memory card busy 60 MF84M1-GMCAVXX
Text: MITSUBISHI MEMORY CARD FLASH MEMORY CARDS MF82M1-GMCAVXX 8/16-bit Data Bus MF84M1-GMCAVXX MF88M1-GMCAVXX Flash Memory Card MF816M-GMCAVXX MF820M-GMCAVXX MF832M-GMCAVXX Connector Type MF82M1-GNCAVXX MF84M1-GNCAVXX Two- piece 68-pin MF88M1-GNCAVXX MF816M-GNCAVXX
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MF82M1-GMCAVXX
8/16-bit
MF84M1-GMCAVXX
MF88M1-GMCAVXX
MF816M-GMCAVXX
MF820M-GMCAVXX
MF832M-GMCAVXX
MF82M1-GNCAVXX
MF84M1-GNCAVXX
68-pin
C TV memory ic programme
d1340
MF816M-GMCAVXX
MF816M-GNCAVXX
MF820M-GMCAVXX
MF820M-GNCAVXX
MF82M1-GMCAVXX
MF82M1-GNCAVXX
mitsubishi memory card busy 60
MF84M1-GMCAVXX
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A5 GNC
Abstract: CY62128BLL-70ZRC CY62128B CY62128BLL-55SC CY62128BLL-55SI 0/mosfet A5 GNC
Text: CY62128B MoBL 128K x 8 Static RAM and three-state drivers. This device has an automatic power-down feature that reduces power consumption by more than 75% when deselected. 1CY62128B MoBL™ Features • 4.5V–5.5V operation • CMOS for optimum speed/power
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CY62128B
1CY62128B
A5 GNC
CY62128BLL-70ZRC
CY62128BLL-55SC
CY62128BLL-55SI
0/mosfet A5 GNC
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A5 GNC
Abstract: 62128b-55 CY62128BLL CY62128B CY62128BLL-55SC CY62128BLL-55SI CY62128BLL-55ZI 62128B-70 62128b70
Text: CY62128B MoBL 128K x 8 Static RAM Features automatic power-down feature that reduces consumption by more than 75% when deselected. • 4.5V – 5.5V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 82.5 mW (max.) (15 mA)
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CY62128B
CY62128B
CY62128BLL-55ZC,
CY62128BLL-55ZAC,
CY62128BLL-55ZRC,
CY62128BLL-70ZAC,
CY62128BLL-70ZRI,
CY62128BLL-70ZRC
A5 GNC
62128b-55
CY62128BLL
CY62128BLL-55SC
CY62128BLL-55SI
CY62128BLL-55ZI
62128B-70
62128b70
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A5 GNC
Abstract: No abstract text available
Text: 28B MoBL CY62128B MoBL® 128K x 8 Static RAM Features power-down feature that reduces power consumption by more than 75% when deselected. • 4.5V–5.5V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 82.5 mW (max.) (15 mA)
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CY62128B
A5 GNC
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a5 gnc
Abstract: A1 GNC
Text: CY62128BN MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active
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CY62128BN
32-lead
32-lead
a5 gnc
A1 GNC
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CY62128BLL-55SI
Abstract: CY62128B CY62128BLL-70SI
Text: CY62128B MoBL 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges — Commercial: 0°C to 70°C The CY62128B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE1 ,
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CY62128B
CY62128B
CY62128BLL-55ZC,
CY62128BLL-55ZAC,
CY62128BLL-55ZRC,
CY62128BLL-70ZAC,
CY62128BLL-70ZRI,
CY62128BLL-70ZRC
CY62128BLL-55SI
CY62128BLL-70SI
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05300
Abstract: CY62128BLL-55SXI A5 GNC CY62128BLL-55SXC TSOP 87 CY62128B CY62128BLL-55ZXI
Text: CY62128B MoBL 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE1 , an active HIGH Chip Enable (CE2), an active LOW Output
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CY62128B
CY62128B
CY62128BLL-55ZC,
CY62128BLL-55ZAC,
CY62128BLL-55ZRC,
CY62128BLL-70ZAC,
CY62128BLL-70ZRI,
CY62128BLL-70ZRC
05300
CY62128BLL-55SXI
A5 GNC
CY62128BLL-55SXC
TSOP 87
CY62128BLL-55ZXI
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a5 gnc
Abstract: CY62128BLL-55SXC CY62128B CY62128BLL-55SC cy62128bll-55zc cy62128bll
Text: CY62128B MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges — Commercial: 0°C to 70°C The CY62128B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1),
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CY62128B
CY62128B
CY62128BLL-55ZC,
CY62128BLL-55ZAC,
CY62128BLL-55ZRC,
CY62128BLL-70ZAC,
CY62128BLL-70ZRI,
CY62128BLL-70ZRC
a5 gnc
CY62128BLL-55SXC
CY62128BLL-55SC
cy62128bll-55zc
cy62128bll
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A5 GNC
Abstract: CY62128B
Text: CY62128B MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges — Commercial: 0°C to 70°C The CY62128B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1),
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CY62128B
CY62128B
sta128K
CY62128BLL-55ZC,
CY62128BLL-55ZAC,
CY62128BLL-55ZRC,
CY62128BLL-70ZAC,
CY62128BLL-70ZRI,
CY62128BLL-70ZRC
A5 GNC
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CY62128BN
Abstract: CY62128BNLL-55SXI CY62128BNLL-55ZXI CY62128BNLL-70SXA
Text: CY62128BN MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active
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CY62128BN
CY62128BN
CY62128BNLL-55SXI
CY62128BNLL-55ZXI
CY62128BNLL-70SXA
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Untitled
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 001-06498 Spec Title: CY62128BN MOBL R 1-MBIT (128K X 8) STATIC RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62128BN MoBL 1-Mbit (128K x 8) Static RAM Functional Description[1] Features • Temperature Ranges
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CY62128BN
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CY62128BN
Abstract: CY62128BNLL-55SC CY62128BNLL-55SI CY62128BNLL-55SXC
Text: CY62128BN MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active
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PDF
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CY62128BN
CY62128BN
CY62128BNLL-55SC
CY62128BNLL-55SI
CY62128BNLL-55SXC
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A1 GNC
Abstract: tns capacitors
Text: K F B i MICRO »DEVICES RF2114 MEDIUM POWER LINEAR AMPLIFIER T y p ica l A p p lic a tio n s • Digital Communication Systems Portable Battery Powered Equipment • Spread Spectrum Communication Systems Commercial and Consumer Systems • Driver for Higher Power Linear Applications
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RF2114
RF2114
600MHz.
A1 GNC
tns capacitors
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Untitled
Abstract: No abstract text available
Text: HBLTEK f V H T1622 RAM Mapping 32x8 LCD Controller for I/O ^iC Features • • • • • • • • • • Operating voltage: 2.7V-5.2V Built-in RC oscillator 1/4 bias, 1/8 duty, frame frequency is 64Hz Max. 32x8 patterns, 8 commons, 32 segments Built-in internal resistor type bias generator
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PDF
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T1622
32kHz
HT1622
HT1622.
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A1 GNC
Abstract: BATWING sop-16
Text: RFH LINEAR POWER AMPLIFIER M IC R O « D E V IC E S • 6V DAMPS/AMPS Cellular Handsets Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Cellular Handsets Portable Battery Powered Equipment • 6V Japanese PDC-950 Cellular Handsets m ; Product Description
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OCR Scan
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PDF
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PDC-950
RF2108
RF2108
A1 GNC
BATWING sop-16
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5416283 2 6 2 ,1 4 4 -W o rd x 1 6 -B it M u ltip o rt D R A M DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and
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PDF
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MSM5416283
MSM5416283
144-word
16-bit
512-word
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A1 GNC
Abstract: d6508a DG50BA d6509 dg509a
Text: 19-0028; Rev 2; 2/96 M onolithic CMOS Analog M ultiplexors _ O m w iI D escription Both devices guarantee break-before-make switching. Maxim guarantees these muxes will not latch up if the power supplies are turned off with the input signals still
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PDF
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OG508A
DG509A
DG506A
DG509
DG508A/DG509A
DG508A/DG
DQS08A/DOS09A
A1 GNC
d6508a
DG50BA
d6509
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C8269
Abstract: 3.5 digits lcd display
Text: RCL Semiconductors Ltd. C9389E Touch Tone Calculator LSI GENERAL D E S C R IP T IO N C9389E is a CMOS LSI calculator chip with 8 digits arithmetic operations, single memory, extraction-of-square-root percentage calculation, auto power off and punctuation and touch tone
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PDF
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C9389E
C9389E.
C9389E
C8269
3.5 digits lcd display
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A1 GNC
Abstract: No abstract text available
Text: MOSEL MS318003 512K X 16,1 MEG X 8 CMOS Mask Programmable ROM FEATURES DESCRIPTION • Access time: 200ns max. The M O S E L M S 3 18 0 0 3 is a C M O S Sl-gate m ask-program mable static read only m em ory organized as 5 2 4 ,2 8 8 words by 16 bits, or 1,0 4 8,57 6 words by 8 bits.
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PID059
MS318003
P42-1
Q64-1
S318003-20PC
S318003-20Q
A1 GNC
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82c45
Abstract: No abstract text available
Text: UNITED MICROELECTRONICS 3QE ^3asass oooono t T - l S ‘3 l ~ O S T -£ 2 ~ 3 3 ~ ù 3 U M S 2 C 4 S 1 Parallel/A synchronous Communication Element Pin Configuration Features • IBM P C /A T com patible ■ U M 82 C 45 0 w ith on-board Centronix printer interface
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PDF
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82C452
82c45
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Relais ITT
Abstract: DIODE 5TE elektronik DDR bauelemente DDR VEB M ik ro e le k tro n ik VEB Kombinat Transistoren DDR TRANSISTOR KATALOG translog Kombinat VEB A 281
Text: KOMBINAT VEB ELEKTRO- APPARATE - WERKE BERLIN-TREPTOW O ursalog G Digitale Bausteine M odul 20 In h a ltsverzeich n is Seite Allgemeine Übersicht Konstruktiver und funktioneller Aufbau Systemparameter Zusammenschaltregeln Betriebsdaten ursamat Gefäßsystem
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PDF
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EEL52F
Relais ITT
DIODE 5TE
elektronik DDR
bauelemente DDR
VEB M ik ro e le k tro n ik
VEB Kombinat
Transistoren DDR
TRANSISTOR KATALOG
translog
Kombinat VEB A 281
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