Untitled
Abstract: No abstract text available
Text: Very Low Power CMOS SRAM 2M X 8 bit BS62LV1600 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA Max. at 55ns
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BS62LV1600
115mA
R0201-BS62LV1600
220uA
100uA
110uA
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AS8S512K3
Abstract: No abstract text available
Text: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface
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AS8S2M32PEC
2Mx32
M0-47AE
AS8S2M32
AS8S2M32PEC
AS8S512K3
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AT49BV320D
Abstract: AT49BV320DT SA70 AT49BV
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3581D
AT49BV320D
AT49BV320DT
SA70
AT49BV
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M29W320DT
Abstract: M29W320D M29W320DB TFBGA48
Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns
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M29W320DT
M29W320DB
TSOP48
TFBGA63
TFBGA48
M29W320DT
M29W320D
M29W320DB
TFBGA48
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3582B
Abstract: AT49BV322D AT49BV322DT AT49BV
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3582B
AT49BV322D
AT49BV322DT
AT49BV
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LH28F320BFHE-PBTL80
Abstract: AP-007-SW-E
Text: Date 32M x16 Flash Memory LH28F320BFHE-PBTL80 Aug. 28. 2001 LHF32F12 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.
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LH28F320BFHE-PBTL80
LHF32F12
AP-001-SD-E
AP-006-PT-E
AP-007-SW-E
LH28F320BFHE-PBTL80
AP-007-SW-E
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FY520
Abstract: FW533 MT28F322D18
Text: ADVANCE 2 MEG x 16 BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa
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MT28F322D18FH
100ns
MT28F322D18FH
FY520
FW533
MT28F322D18
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M28W320BB
Abstract: M28W320BT
Text: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■
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M28W320BT
M28W320BB
100ns
TFBGA47
M28W320BB
M28W320BT
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DSP56854
Abstract: 56800E DSP56800E DSP56800ERM DSP56854E
Text: 56854 Data Sheet Technical Data 56800E 16-bit Digital Signal Controllers DSP56854 Rev. 6 01/2007 freescale.com 56854 General Description • 120 MIPS at 120MHz • Serial Port Interface SPI • 16K x 16-bit Program SRAM • 8-bit Parallel Host Interface
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56800E
16-bit
DSP56854
120MHz
DSP56854
56800E
DSP56800E
DSP56800ERM
DSP56854E
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9018
Abstract: AM29F016 EDI7F332MC
Text: EDI7F332MC 2Megx32 2Megx32 Flash Module The EDI7F332MC and EDI7F2332MC are organized as one and two banks of 2 meg x 32 respectively. The modules are based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. Both modules offer access times between 90 and
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EDI7F332MC
2Megx32
2Megx32
EDI7F332MC
EDI7F2332MC
AM29F016
150ns
EDI7F332MC-BNC
A0-A20
9018
AM29F016
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LH28F320BFHE-PBTLF1
Abstract: Flash Memory 32Mbit DQ15DQ0
Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLF1 Flash Memory 32Mbit 2Mbitx16 (Model Number: LHF32FF1 Lead-free (Pb-free) Spec. Issue Date: October 15, 2004 Spec No: EL16X114 LHF32FF1 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LH28F320BFHE-PBTLF1
32Mbit
2Mbitx16)
LHF32FF1
EL16X114
LH28F320BFHE-PBTLF1
Flash Memory 32Mbit
DQ15DQ0
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LH28F160S3NS-L10
Abstract: LHF16KA1
Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3NS-L10 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16KA1) Issue Date: March 16, 2001 sharp LHF16KA1 ●Handle this document carefully for it contains material protected by international copyright
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LH28F160S3NS-L10
LHF16KA1)
LHF16KA1
LH28F160S3NS-L10
LHF16KA1
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LH28F160S3HNS-L10A
Abstract: LHF16KAU
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3HNS-L10A Flash Memory 16M 2MB x 8 / 1MB × 16 (Model No.: LHF16KAU) Spec No.: EL138074 Issue Date: September 5, 2001 sharp LHF16KAU ●Handle this document carefully for it contains material protected by international copyright
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LH28F160S3HNS-L10A
LHF16KAU)
EL138074
LHF16KAU
LH28F160S3HNS-L10A
LHF16KAU
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M29DW323D
Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns
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M29DW324DT
M29DW324DB
TSOP48
M29DW323D
TSOP48 outline
M29DW323DB
M29DW323DT
M29DW324D
M29DW324DB
M29DW324DT
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mobile circuit diagram
Abstract: No abstract text available
Text: Renesas LSIs M6MGB/T647M33KT 67,108,864-BIT 4,194,304-WORD BY 16-BIT CMOS FLASH MEMORY 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM & Stacked-µMCP (micro Multi Chip Package) Description The M6MGB/T647M33KT is a Stacked micro Multi Chip Package (S-µMCP) that contents 64M-bit Flash memory and
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M6MGB/T647M33KT
864-BIT
304-WORD
16-BIT)
432-BIT
152-WORD
M6MGB/T647M33KT
64M-bit
32M-bit
mobile circuit diagram
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M27W032
Abstract: No abstract text available
Text: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V
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M27W032
110ns
0020h
TSOP48
888Eh
M27W032
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M36DR432AD
Abstract: M36DR432BD
Text: M36DR432AD M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product FEATURES SUMMARY • Multiple Memory Product Figure 1. Package – 1 bank of 32 Mbit (2Mb x16) Flash Memory – 1 bank of 4 Mbit (256Kb x16) SRAM
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M36DR432AD
M36DR432BD
256Kb
100ns,
120ns
0020h
LFBGA66
M36DR432AD:
00A0h
M36DR432AD
M36DR432BD
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mx29lv320ttc
Abstract: MX29LV320T Q0-Q15 SA10
Text: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention
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MX29LV320T/B
32M-BIT
200nA
10-year
64K-Byte
FEB/10/2003
MAR/26/2003
APR/23/2003
JUL/04/2003
mx29lv320ttc
MX29LV320T
Q0-Q15
SA10
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NTP 7100
Abstract: AX88796L CS8900A LAN91C111 SMSCLAN91C111 ABDD intersil prism
Text: iChip TM iChip CO710AG iChip CO710AG-XM Data Sheet Ver. 1.00 International: Connect One Ltd. 2 Hanagar Street Kfar Saba 44425, Israel Tel: +972-9-766-0456 Fax: +972-9-766-0461 E-mail: [email protected] http://www.connectone.com Pub. No. 11-7100-03, Copyright August 2003
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CO710AG
CO710AG-XM
CO710AG
333MHz.
NTP 7100
AX88796L
CS8900A
LAN91C111
SMSCLAN91C111
ABDD
intersil prism
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lhmn5
Abstract: 2600T LH5332600T LH53 DA-14-L
Text: I LH53 3 2 6 00 T C O N T E N T 1 S 1 J. General Description P. 2 2. Features P. 2 3. Block Diagram P. 3 4. Pin Connections P. 4 5. Pin Description P. 4 6. Absolute Maximum Ratings P. 5 n t. Operating Ranges P. 5 8. D.C. Electrical Characteristics P. 5 9. A. C. Electrical Characteristics
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2600T
Q017174
LH5332600T
-1-A20
A0-A20
D0-D15
DG1717S
lhmn5
2600T
LH53
DA-14-L
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T1A16
Abstract: 29LV116
Text: A M D ÎI Am29LV116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and
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Am29LV116B
ar116B
T1A16
29LV116
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Untitled
Abstract: No abstract text available
Text: CONDENSED AMD£I AmMCLOOXA 2 or 4 Megabyte 3.0 Volt-only Flash Miniature Card DISTINCTIVE CHARACTERISTICS • 2 or 4 Mbytes of addressable Flash memory ■ 2.7 V to 3.6 V, single power supply operation — Write and read voltage: 3.0 V -10/+20% — No additional supply current required for VPP
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60-pad
100h-10Bh.
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Untitled
Abstract: No abstract text available
Text: / A M D il A m 2 9 L V 0 1 7 B 16 Megabit 2 M x 8-Bit CM O S 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • S in g le p o w e r s u p p ly o p e ra tio n ■ Embedded Algorithms — Full voltage range: 2.7 to 3.6 volt read and write
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16-038-TSOP-1
TSR040--40-Pin
16-038-TSOP-1
TSR040
Am29LV017B
FGC048--48-Ball
16-038-FGC-2
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Untitled
Abstract: No abstract text available
Text: Preliminary bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte gral control circuitry and lithium
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bq4017/bq4017Y
2048Kx8
bq4017
216-bit
bq4017
2048K
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