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    Amphenol Corporation CAA00HSCA0A1200

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    Amphenol Corporation CAA00HSCA0A1290

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    Amphenol Corporation CAA00HSCA0A1250

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    Amphenol Corporation CAA00HSCA0A1225

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    A0A12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    45VM32160D

    Abstract: No abstract text available
    Text: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		PDF IS42/45VM32160D 32Bits IS42/45VM32160D -40oC 16Mx32 IS42VM32160D-6BLI IS42VM32160D-75BLI 90-ball 45VM32160D

    W9825G6JH

    Abstract: A-04 w9825g6jh-6l w9825g6jh-6
    Text: W9825G6JH 4 M  4 BANKS  16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


    Original     		PDF W9825G6JH A-04 w9825g6jh-6l w9825g6jh-6

    MT90812AL1

    Abstract: TGE-5 EB32
    Text: MT90812 Integrated Digital Switch IDX Advance Information Mar 2011 Features • • • • • • • • • • • • • • • • • • MT90812AP MT90812AL MT90812APR MT90812AP1 MT90812AL1 MT90812APR1 192 channel x 192 channel non-blocking switching


    Original     		PDF MT90812 -27dB, MT90812AL1 TGE-5 EB32

    AS4SD32M16

    Abstract: No abstract text available
    Text: SDRAM AS4SD32M16 512Mb: 32 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 32 Meg x 16 (8 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive


    Original     		PDF AS4SD32M16 512Mb: 192-cycle -40oC -55oC 125oC AS4SD32M16

    Untitled

    Abstract: No abstract text available
    Text: SDRAM AS4SD2M32 512K x 32 x 4 Banks 64-Mb PIN ASSIGNMENT (Top View) Synchronous SDRAM 86-Pin TSOPII FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 512K x 32 x 4 banks • Fully synchronous; all signals registered on positive


    Original     		PDF AS4SD2M32 64-Mb) 133MHz TSOPII-86LD -40oC -55oC 125oC AS4SD2M32

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm


    Original     		PDF AS4DDR232M72PBG 32Mx72 AS4DDR232M72PBG

    Untitled

    Abstract: No abstract text available
    Text: SDRAM AS4SD8M16 128 Mb: 8 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • • • • • • • • • • • • • • Full Military temp (-55°C to 125°C) processing available Copper lead frame option for enhanced reliability


    Original     		PDF AS4SD8M16 096-cycle -40oC -55oC 125oC AS4SD8M16

    ci str 9656

    Abstract: DSP56200 1311 srz cir 2262 af digital signal processing roman kuc manual so real time application and product for fir 102 m x1 y1 80386 programmers manual Motorola DSP56200 PT 2262 DATASHEET
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSP56100 16-BIT DIGITAL SIGNAL PROCESSOR FAMILY MANUAL Motorola, Inc. Semiconductor Products Sector DSP Division 6501 William Cannon Drive, West Austin, Texas 78735-8598 For More Information On This Product,


    Original     		PDF DSP56100 16-BIT DSP56100FM/AD ci str 9656 DSP56200 1311 srz cir 2262 af digital signal processing roman kuc manual so real time application and product for fir 102 m x1 y1 80386 programmers manual Motorola DSP56200 PT 2262 DATASHEET

    DDR266

    Abstract: No abstract text available
    Text: DDR SDRAM stacked 1Gb B-die x4/x8 DDR SDRAM Stacked 1Gb B-die DDR SDRAM Specification (x4/x8) Revision 1.1 Rev. 1.1 August. 2003 DDR SDRAM stacked 1Gb B-die (x4/x8) DDR SDRAM st. 1Gb B-die Revision History Revision 0.0 (May, 2003) - First version for internal review.


    Original     		PDF

    80C51

    Abstract: 80C52 PDIL40 PLCC44 TS80C51U2 TS83C51U2 TS87C51U2 VQFP44 16kx8 ram
    Text: TS80C51U2 TS83C51U2 TS87C51U2 Double UART 8-bit CMOS Microcontroller 1. Description TS80C51U2 is high performance CMOS ROM, OTP and EPROM versions of the 80C51 CMOS single chip 8-bit microcontroller. The TS80C51U2 retains all features of the 80C51 with extended ROM/EPROM capacity 16 Kbytes , 256 bytes


    Original     		PDF TS80C51U2 TS83C51U2 TS87C51U2 TS80C51U2 80C51 80C52 PDIL40 PLCC44 TS83C51U2 TS87C51U2 VQFP44 16kx8 ram

    DDR2-667

    Abstract: PC2-5300 SSTL-18
    Text: NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 32Mx16 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module • 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2 SDRAM • Performance:


    Original     		PDF NT256T64UH4A1FY 256MB: 240pin 32Mx16 240-pin 32Mx64 84-ball DDR2-667 PC2-5300 SSTL-18

    NT512T64U88A0BY-37B

    Abstract: NT512T64U88A0BY-5A NT1GT64U8HA0BY-37B NT512T64U88A0F PC2-3200 SSTL-18 4E543147543634553848413042592D35412020 NT512T64U88A
    Text: NT512T64U88A0F / NT512T64U88A0B / NT512T64U88A0BY Green NT1GT64U8HA0F / NT1GT64U8HA0B / NT1GT64U8HA0BY (Green) 512MB: 64M x 64 / 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 64Mx8 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module


    Original     		PDF NT512T64U88A0F NT512T64U88A0B NT512T64U88A0BY NT1GT64U8HA0F NT1GT64U8HA0B NT1GT64U8HA0BY 512MB: 240pin 64Mx8 240-pin NT512T64U88A0BY-37B NT512T64U88A0BY-5A NT1GT64U8HA0BY-37B PC2-3200 SSTL-18 4E543147543634553848413042592D35412020 NT512T64U88A

    IS42S16160D

    Abstract: IS42S16160D-7TLI
    Text: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg 16Meg 256-MBIT 256Mb IS42S83200D IS42S16160D IS42S16160D-7TLI

    DDR2-400

    Abstract: DDR2-533 K4T56043QF K4T56083QF
    Text: 256MB, 512MB, Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 256Mb F-die 72-bit ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 DDR2 SDRAM 256MB, 512MB, Registered DIMMs DDR2 Registered DIMM Ordering Information


    Original     		PDF 256MB, 512MB, 240pin 256Mb 72-bit M393T3253FG0-CD5/CC 256MB 32Mx72 DDR2-400 DDR2-533 K4T56043QF K4T56083QF

    DDR400

    Abstract: K4H560838E M312L3223EG0-CCC M312L6420EG0-CCC
    Text: 256MB, 512MB, 1GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module DDR400 Module 60FBGA 184pin Registered Module based on 256Mb E-die (x4, x8) with 1,200mil Height Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB, 1GB Registered DIMM DDR SDRAM


    Original     		PDF 256MB, 512MB, DDR400 60FBGA) 184pin 256Mb 200mil K4H560838E M312L3223EG0-CCC M312L6420EG0-CCC

    K4H560838E

    Abstract: DDR333
    Text: 256MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb E-die with 64/72-bit ECC/Non ECC Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB Unbuffered DIMM DDR SDRAM Revision History Revision 1.0 April, 2003


    Original     		PDF 256MB, 512MB 184pin 256Mb 64/72-bit K4H560838E DDR333

    NT5TU128M8DE

    Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE
    Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6


    Original     		PDF NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TB256M4DE NT5TB128M8DE NT5TB64M16DG -37B/-37BI DDR2-533 DDR2-667 DDR2-800 NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE

    nt5tu128m8de-ac

    Abstract: NT5TU64M16DG-AD NT5TU128M8DE-AD NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TU64M16DG-3C Nanya NT5TU64M16DG
    Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG 1Gb DDR2 SDRAM Preliminary Edition Features CAS Latency and Frequency Speed Sorts -37B DDR2 -533 -3C DDR2 -667 -AD DDR2 -800 -AC DDR2 -800 Units Bin CL-tRCD-TRP 4-4-4 5-5-5 6-6-6 5-5-5 tck max. Clock Frequency 266


    Original     		PDF NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG nt5tu128m8de-ac NT5TU64M16DG-AD NT5TU128M8DE-AD NT5TU64M16DG NT5TU64M16DG-3C Nanya NT5TU64M16DG

    NT5TU32M16AG-37B

    Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
    Text: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8


    Original     		PDF NT5TU128M4AB/NT5TU128M4AE NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE NT5TU32M16AF/NT5TU32M16AG /NT5TU32M16AS 512Mb NT5TU32M16AG-37B NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af

    47c820

    Abstract: No abstract text available
    Text: TOSHIBA UC/UP 54E J> • TORTEMT 0 0 n 4 7 Q 524 « T O S S ' TOSHIBA TMP47P820 CMOS 4-BIT MICROCONTROLLER TMP47P820F The 47P820 is the OTP microcontroller with 64kbits PROM. For program operation, the programming is achieved by using with EPROM programmer (TMM2764AD type) and adapter socket (BM 1 112).


    OCR Scan     		PDF TMP47P820 TMP47P820F 47P820 64kbits TMM2764AD TMP47P820F 512x4-b QFP80 QFP80 SEG14--- 47c820

    E3235

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59WM815/07/03BFT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM


    OCR Scan     		PDF TC59WM815/07/03BFT-70 304-WORDSX4BANKSX16-BITS 608-WORDSX4BANKSX8-BITS 216-WORDSX4BANKSX4-BITS TC59WM815BFT TC59WM807BFT TC59WM803BFT E3235

    TMS320P17

    Abstract: d6151 filter lark eng 1D2T ltw 8 pin TMS320P14 TMS320LC15
    Text: TMS320C1X DIGITAL SIGNAL PROCESSORS J A N U A H Y 1 9 8 7 — R E V IS E D J U L Y 1991 • Performance Up to 8.77 MIPs Commercial and Military Versions Available • All TMS320C1x Devices are Object Code Compatible Operating Free-Air Temperature . . . 0°C to 70°C


    OCR Scan     		PDF TMS320C1X 144/256-Word TMS320E14/P14/E15/P15/E17/P17) TMS320P14/P15/P17) 64K-Word 32-Bit TMS320C10 200-ns TMS320C930) TMS320P17 d6151 filter lark eng 1D2T ltw 8 pin TMS320P14 TMS320LC15

    47C870N

    Abstract: No abstract text available
    Text: TOSHIBA TMP47P870 CMOS 4-BIT MICROCONTROLLER TMP47P870N The 47P870N is the system evaluation LSI of 47C670/870 with 64K bits one-time PROM. The 47P870 programs /verifies using an adapter socket to connect with PROM programmer, as it is in TMM2764D. In addition, the 47P870 and the 47C670/870 are pin compatible. The 47P870 operates as the same as


    OCR Scan     		PDF TMP47P870 TMP47P870N 47P870N 47C670/870 47P870 TMM2764D. 47C870N

    Untitled

    Abstract: No abstract text available
    Text: SN74BCT2160 8K X 4 2-WAY CACHE ADDRESS COWIPARATOR/DATA RAM D 3512, JU NE 1990 FM PACKAGE TOP VIEW LO ^ n w r o < < < < < < Fast Address to Match Time . . . 12 ns Max 2-Way Architecture Significantly Improves Hit Rate 4 * Implements LRU Replacement Algorithm


    OCR Scan     		PDF SN74BCT2160 T2160