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Panduit Corp H1B1B1A0A10AJA0 NEMA 5-15P, 15 AMP, SINGLE PH, 1
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DigiKey	H1B1B1A0A10AJA0	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Warrick 26B1A0A10 LEVEL CONTROL, 26B1A0-A-10 , 26 SERIES \| Warrick (Gems Sensors) 26B1A0A10
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RS	26B1A0A10	Bulk		5 Weeks	1	1 $268.29 10 $268.29 100 $268.29 1000 $268.29 10000 $268.29	Get Quote
Ewellix MAX10-A300495A0A100-000 Electric Linear Actuator, Matrix Series \| Ewellix MAX10-A300495A0A100-000
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RS	MAX10-A300495A0A100-000	Bulk		11 Weeks	1	1 $383.03 10 $383.03 100 $383.03 1000 $383.03 10000 $383.03	Get Quote
Ewellix MAX30-A300515A0A100-000 Electric Linear Actuator, Matrix Series \| Ewellix MAX30-A300515A0A100-000
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RS	MAX30-A300515A0A100-000	Bulk		11 Weeks	1	1 $387.87 10 $387.87 100 $387.87 1000 $387.87 10000 $387.87	Get Quote
Ewellix MAX31-A050265A0A100-000 Electric Linear Actuator, Matrix Series \| Ewellix MAX31-A050265A0A100-000
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RS	MAX31-A050265A0A100-000	Bulk		11 Weeks	1	1 $459.31 10 $459.31 100 $459.31 1000 $459.31 10000 $459.31	Get Quote

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A0A10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
4Mx4 DRAM Abstract: No abstract text available Text: PcRam TS4MDM32V60 Description Features The TS4MDM32V60 is a 4,194,304-word by 32-bit • 4,194,304-word by 32-bit organization. dynamic RAM module. This module consists of 8 pcs • Fast Page Mode Operation. 4Mx4-bit, 3.3 volt, fast page mode DRAMs in TSOP	Original	PDF	TS4MDM32V60 TS4MDM32V60 304-word 32-bit 32-bit 4Mx4 DRAM
simm EDO 72pin Abstract: No abstract text available Text: 72PIN EDO SIMM 32MB With 4Mx4 60ns TS8MED3260 Description Features The TS8MED3260 is a 8M by 32-bit dynamic RAM • Extended Data Out Mode operation module with 16 pcs of 4Mx4 DRAMs assembled on the • Single +5.0V ± 10% power supply. printed circuit board.	Original	PDF	72PIN TS8MED3260 TS8MED3260 32-bit simm EDO 72pin
IS42VS16100E Abstract: 42VS16100E IS42VS16100E-75BLI Text: IS42VS16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100, 83 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11	Original	PDF	IS42VS16100E 4000-mil 60-ball 400-mil IS42VS16100E 42VS16100E IS42VS16100E-75BLI
CMS3216LAF Abstract: CMS3216LAG CMS3216LAH Text: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions	Original	PDF	CMS3216LAx-75xx 2Mx16) CMS3216LAF CMS3216LAG CMS3216LAH
Untitled Abstract: No abstract text available Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8M362SSQ4-XX FAST PAGE MODE 8M X 36 DRAM SIMM, 2K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED8M362SSQ4-XX is a 8M bit X 36 Dynamic RAM high density memory module. The AVED Memory Products AVED8M362SSQ4-XX	Original	PDF	AVED8M362SSQ4-XX AVED8M362SSQ4-XX 24-pin 28-pin 72-pin
Untitled Abstract: No abstract text available Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8M322SSM4/LSM4 FAST PAGE MODE 8MX32 DRAM SIMM, 2K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED8M322SSM4/LSM4 is an 8M bit x 32 Dynamic RAM high density memory module. The AVED Memory Products AVED8M322SSM4/LSM4	Original	PDF	AVED8M322SSM4/LSM4 8MX32 AVED8M322SSM4/LSM4 24-pin 72-pin
Untitled Abstract: No abstract text available Text: SDRAM AS4SD2M32 512K x 32 x 4 Banks 64-Mb PIN ASSIGNMENT (Top View) Synchronous SDRAM 86-Pin TSOPII FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 512K x 32 x 4 banks • Fully synchronous; all signals registered on positive	Original	PDF	AS4SD2M32 64-Mb) 133MHz TSOPII-86LD -40oC -55oC 125oC AS4SD2M32
M29W320DT Abstract: M29W320D M29W320DB TFBGA48 Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns	Original	PDF	M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48
8051 microcontroller LED dot matrix Abstract: led display alarm clock 8051 microcontroller Digital Clock with Alarm Using PCF8583P and 8051 circuit diagram of bi colour led blinker PCF8575 PCF8577 PCA9518 z80 processor application traffic circuit p87c528 replacement ic software program pcf8583 Text: s bu I C2 a ria ld at se ria lc lo ck se Quarndon Electronics Quarndon Electronics Ltd. Slack Lane Derby DE22 3ED tel: 01332 332651 fax: 01332 360922 email: [email protected] website: www.quarndon.co.uk Contents 3 Philips Semiconductor I2C Devices 3 Typical I2C Product Characteristics	Original	PDF	PCA9518, 8051 microcontroller LED dot matrix led display alarm clock 8051 microcontroller Digital Clock with Alarm Using PCF8583P and 8051 circuit diagram of bi colour led blinker PCF8575 PCF8577 PCA9518 z80 processor application traffic circuit p87c528 replacement ic software program pcf8583
NT511740C0J Abstract: NT511740C0J-50 NT511740C0J-60 NT511740C0J-70 0J70 NT511740 Text: NT511740C0J 4,194,304-word x 4-bit Dynamic RAM : Fast Page Mode 1. DESCRIPTION The NT511740C0J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC’s CMOS silicon gate technology. The NT511740C0J achieves high integration , high-speed operation , and low-power	Original	PDF	NT511740C0J 304-word NT511740C0J 26/24-pin cycles/32 NT511740C0J-50 NT511740C0J-60 NT511740C0J-70 0J70 NT511740
09005aef811ce1d5 Abstract: MT48LC2M32B2 MT48LC2M32B2TG-7G Text: 64Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC2M32B2 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdramds FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock	Original	PDF	MT48LC2M32B2 PC100 096-cycle 09005aef811ce1fe/Source: 09005aef811ce1d5 64MSDRAMx32 09005aef811ce1d5 MT48LC2M32B2TG-7G
A1051 Abstract: No abstract text available Text: TMS27C291, TMS27C292 16.384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ-ONLY MEMORY SEPTEM BER 1986 —REVISED APRIL 1988 Organization . . . 2K x 8 J AND N PA C KA G E Pin Compatible with Existing 2K x 8 Bipolar/High-Speed CM OS EPROMs	OCR Scan	PDF	TMS27C291, TMS27C292 384-BIT TMS27PC291 27C/PC291-3 27C/PC291 27C/PC291-5 27C/PC291-35 27C/PC291-45 A1051
cq837 Abstract: No abstract text available Text: 4J« - »t TOSHIBA HYBRID D IG ITA L INTcGRATED CIRCUIT INTEGRATED CIRCUIT TO SHIBA THM 364080AS THM 364080ASG TECHNICAL DATA - 60. 70. 80, 10 - 60, 70, 80. 10 TENTATIVE DATA 4194,304 W O R D S X 36 BIT D YN AM IC RA M MODULE DESCRIPTION The THM364080AS/ASG is a 4,194,304 words by 36 bits dynamic RA M module which assembled 36	OCR Scan	PDF	364080AS 364080ASG THM364080AS/ASG TC514100ASJ 364080ASG A0-A10 THM36408QAS THM364080AS THM364080ASG cq837
TC5117800bnt-60 Abstract: TC5117800B Text: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,	OCR Scan	PDF	TC5117800BNJ/BNT-60/70 TC5117800BNT TC5117800bnt-60 TC5117800B

Untitled Abstract: No abstract text available Text: TMS44100, TMS44100P 4194304-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS410F-SEPTEMBER 1989-REVISED DECEMBER 1992 Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS SD P AC K A G E t (TOP VIEW) DJ P A C K A G E t (TOP VIEW) Organization . . . 4194 304 x 1	OCR Scan	PDF	TMS44100, TMS44100P 4194304-BIT SMHS410F-SEPTEMBER 1989-REVISED TMS44100/P-60 TMS44100/P-70 TMS44100/P-80 A0-A10 TMS44100
tc5117400f Abstract: TC5117400J Text: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced	OCR Scan	PDF	TC5117400J/Z/FT-60/70 TC5117400J/Z/FT-60/70 TC5117400J/Z/FT. 1MX16 tc5117400f TC5117400J
Ks-7b Abstract: No abstract text available Text: TMS417800, TMS417800P 2 097152 WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M K S 7 8 0 -D E C E M B E R 1992 x 8 DE P AC K A G E t DZ P A C K AG E t TOP VIEW (TOP VIEW) * Performance Ranges: vcc[ 1o D Q 0[ 2 ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE	OCR Scan	PDF	TMS417800, TMS417800P 417800/P-60 417800/P-70 417800/P-80 TMS417800 Ks-7b
TC514100 Abstract: 514100A Text: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION THE TC514100A is the new generation dynamic RAM organized 4,194,304 word by 1 bit. The TC514410ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit	OCR Scan	PDF	--------------TC514100ASJ/AZ/AFT-60/70/80 TC514100A TC514410ASJ/AZ/AFT 300mil) TC51400/ASJ/A27AFT. TC514100 514100A
27c eeprom Abstract: 27C291 74TTL Text: 0^1755 DG77HS TMS27C291, TMS27C292 16,384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ ONLY MEMORY SEPTEMBER 1988-R EV ISED APRIL 1988 • Single 5-V Power Supply • Pin Compatible with Existing 2K x 8 BIpolar/High-Speed CMOS EPROMs	OCR Scan	PDF	DG77HS TMS27C291, TMS27C292 384-BIT TMS27PC291 1988-R 27C/PC291-3 27C292-3 27C/PC291 27c eeprom 27C291 74TTL
jeida dram 88 pin Abstract: STI324000C1 Text: STI324000C1 -X X V 88-PIN CARDS 4M X 32 DRAM Card FEATURES • GENERAL DESCRIPTION Performance range: ^RAC Wc *RC STI324000C1 -60V 60ns 15ns 110ns STI324000C1-70V 70ns 20ns 130ns The Simple Technology STI324000C1 is a 4M bil x 32 Dynamic RAM high density memory card. The Simple Technology	OCR Scan	PDF	STI324000C1 88-PIN 110ns 130ns STI324000C1-70V 24pin jeida dram 88 pin
Untitled Abstract: No abstract text available Text: HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JE D E C Standard, Unbuffered 8 Byte Dual In-Line Memory Module	OCR Scan	PDF	64-Bit 72-Bit 168pin HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 V1605/45GU-50/-60
TME 87 0D Abstract: No abstract text available Text: SIEMENS 3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60 HYM64V8045GU-50/-60 HYM72V8005GU-50/-60 HYM72V8045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect * 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module	OCR Scan	PDF	64-Bit 72-Bit 168pin HYM64V8005GU-50/-60 HYM64V8045GU-50/-60 HYM72V8005GU-50/-60 HYM72V8045GU-50/-60 DM168-13 TME 87 0D
Untitled Abstract: No abstract text available Text: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability	OCR Scan	PDF	STI368003 STI368003-60 STI368003-70 110ns 130ns 72-PIN STI368003 24pin 28-pin
Untitled Abstract: No abstract text available Text: SIEMENS 3.3V 8M x 64-Bit EOO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60/-70 HYM64V8045GU-50/-60/-70 HYM72V8005GU-50/-60/-70 HYM72 V8045G U-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information •	OCR Scan	PDF	64-Bit 72-Bit 168pin HYM64V8005GU-50/-60/-70 HYM64V8045GU-50/-60/-70 HYM72V8005GU-50/-60/-70 HYM72 V8045G U-50/-60/-70 V8005/45GU-50/-60/-70

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A0A10 Search Results

A0A10 Price and Stock

Panduit Corp H1B1B1A0A10AJA0

Warrick 26B1A0A10

Ewellix MAX10-A300495A0A100-000

Ewellix MAX30-A300515A0A100-000

Ewellix MAX31-A050265A0A100-000

A0A10 Datasheets Context Search

4Mx4 DRAM

simm EDO 72pin

IS42VS16100E

CMS3216LAF

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M29W320DT

8051 microcontroller LED dot matrix

NT511740C0J

09005aef811ce1d5

A1051

cq837

TC5117800bnt-60

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tc5117400f

Ks-7b

TC514100

27c eeprom

jeida dram 88 pin

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TME 87 0D

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