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    A 720 TRANSISTOR Search Results

    A 720 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    A 720 TRANSISTOR Price and Stock

    Microchip Technology Inc MSC360SMA120B

    MOSFET - N-Channel - SiCFET (Silicon Carbide) - 1200V - 360m Ohms Rds On - TO-247-4 Package - Through Hole.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MSC360SMA120B
    • 1 -
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    • 100 $5.64
    • 1000 $5.14
    • 10000 $5.14
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    Diotec Semiconductor AG DIW120SIC023-AQ

    SiC MOSFET - TO-247-3L - N - 130A - 1200V - 0.023Ω
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com DIW120SIC023-AQ
    • 1 $189.24
    • 10 $189.24
    • 100 $189.24
    • 1000 $58.62
    • 10000 $58.62
    		Buy Now

    A 720 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLUU669 – January 2012 QFN-Packaged bq24165/166/167EVM-720 Evaluation Modules The bq24165/166/167EVM-720 evaluation module is a complete charger module for evaluating a compact, flexible, high-efficiency, USB-friendly, switch-mode, charge-management solution for single-cell,


    Original     		PDF SLUU669 bq24165/166/167EVM-720 bq2416x bq24165/166/167EVM

    Untitled

    Abstract: No abstract text available
    Text: – T H E C H A L L E N G E R I N B U I L D I N G A U T O M A T I O N R E G I N – T H E C H A L L E N G E R I N B U I L D I N G A U T O M A T I O N Box 116, S-428 22 Kållered, Phone: +46 31 720 02 00 [email protected] Sweden Fax: +46 31 720 02 50 www.regin.se


    Original     		PDF S-428 PRODCAT2013 HDT3200

    Untitled

    Abstract: No abstract text available
    Text: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3565

    Untitled

    Abstract: No abstract text available
    Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3798

    Untitled

    Abstract: No abstract text available
    Text: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3742

    2SK3566

    Abstract: No abstract text available
    Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3566 2SK3566

    Untitled

    Abstract: No abstract text available
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3473

    transistor K3564

    Abstract: No abstract text available
    Text: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3564 transistor K3564

    LXY Series

    Abstract: mitsubishi microcomputers 4-bit 20P2N-A M34250E2FP M34250E2-XXXFP M34250M2 M34250M2-XXXFP PU01 f1813
    Text: MITSUBISHI MICROCOMPUTERS 4250 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4250 Group is a 4-bit single-chip microcomputer designed with CMOS technology. Its CPU is that of the 720 series using a simple instruction set. The computer is equipped with one 8-bit


    Original     		PDF KI-9711 LXY Series mitsubishi microcomputers 4-bit 20P2N-A M34250E2FP M34250E2-XXXFP M34250M2 M34250M2-XXXFP PU01 f1813

    BD722

    Abstract: BD720 B0719 BD440 BD719 BD724 BD726 transistor 3bs NPN, Si, POWER TRANSISTOR, PLASTIC
    Text: BD720 BD722 BD724 BD726 J SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a S O T3 2 plastic envelope intended fo r use in audio output and general purpose am plifier applications. BD 720 is equivalent to BD 440. NPN complements are B D 719; 721; 723 and


    OCR Scan     		PDF BD720 BD722 BD724 BD726 BD440. BD719; BD724. bd722 B0719 BD440 BD719 BD726 transistor 3bs NPN, Si, POWER TRANSISTOR, PLASTIC

    cq24-000

    Abstract: Q24060 98l18
    Text: Sfe- -<•' m2 DEVICE SPECIFICATION SERIES BiCMOS LOGIC ARRAYS Q24000 DESCRIPTION The AMCC Q24000 Series of BiCMOS logic arrays is comprised of six products with densities ranging from 720 to 13440 equivalent gates including a structured array with a high performance Phase-Locked Loop*.


    OCR Scan     		PDF Q24000 Q24000 A7D1320-0892 755-AMCC cq24-000 Q24060 98l18

    Application of irf 720

    Abstract: irf ballast IRF 720 IRF722FI
    Text: SCS-THOMSON IRF 720/FI-721/FI IRF 722/FI-723/FI * it,. M»IHi gTïïMSD(g§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS ^DS(on IRF720 IRF720FI 400 V 400 V 1.8 fi 1.8 0 'd " 3.3 A 2.5 A IRF721 IRF721FI 350 V 350 V 1.8 n 1.8 fi 3.3 A 2.5 A


    OCR Scan     		PDF 720/FI-721/FI 722/FI-723/FI IRF720 IRF720FI IRF721 IRF721FI IRF722 IRF722FI IRF723 IRF723FI Application of irf 720 irf ballast IRF 720

    J722

    Abstract: IRF722FI 721F 723 voltage regulator internal diagram IRF720 IRF720FI IRF721 IRF721FI IRF722 IRF723
    Text: 3DE D • 7^537 DQER7ÖC 1 S ■ ' ' T 73 c^ - \ \ / w T SGS-THOMSON S g S-THOMSON ' IRF 720/FI-721/FI IRF 722/FI-723/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vqss ^DS on IRF720 IRF720FI 400 V 400 V 1.8 fi 1.8 fi 3.3 A 2.5 A IRF721 IRF721FI


    OCR Scan     		PDF 720/FI-721/FI 722/FI-723/FI IRF720 IRF720FI IRF721 IRF721FI IRF722 IRF722FI IRF723 IRF723FI J722 721F 723 voltage regulator internal diagram

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT PART REV. NUMBER O E D - S T - 1 MLAR2 REV. A E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #1 OB RPR. & REDRAWN IN 3D. 5.30.03 ELECTRO-OPTICAL CHARACTERISTICS TA = 2 5 'C PARAMETER MIN TYP MAX UNITS SPECTRAL SENSITIVITY 720 940 1050


    OCR Scan     		PDF ia00ft

    a2725

    Abstract: No abstract text available
    Text: 720/25 HARRI D escription • W ide P rogram m ing R a n g e HA-2720/2725 programmable amplifiers are internally compensated monolithic devices offering a wide range of performance, that can be controlled by adjusting the circuits’ 'set' current Os e t - B y means of adjusting an


    OCR Scan     		PDF HA-2720/2725 HA-2720 x19mHs a2725

    Untitled

    Abstract: No abstract text available
    Text: • 4305271 0QS4513 720 ■ 3 3 H A R R HAS IS 2 6 8 9 7 P-Channel Enhancement-Mode Power MOS Field-Effect Transistors A u g u s t 1991 Features • N Package TO-204AA BOTTOM VIEW -1 2 A , -1 0 0 V * rD S on = 0 -3 n SOURCE • S O A is P o w e r-D is sip atio n Lim ited


    OCR Scan     		PDF 0QS4513 O-204AA 005451tj

    CA3039

    Abstract: 10 DC-1 diode CA3039M CA3039M96
    Text: HA RR IS S E M I C O N D S E C T O R blE D 43G2271 O D M b n i 720 IHAS CA3039 fUfU! H A R R IS S E M I C O N D U C T O R Diode Array March 1993 Features Description • Six Matched Diodes on a Common Substrate The CA3039 consists of six ultra-fast, low capacitance


    OCR Scan     		PDF 43D2271 CA3039 CA3039 M302271 10 DC-1 diode CA3039M CA3039M96

    mc10116

    Abstract: MC10116 application MC10124 application MC10125 application MC10125 MC10128 AN-720 MC10124 MC10129 MCI650
    Text: Order this document by AN720/D AN-720 Application Note c INTERFACING WITH MECL 10,000 INTEGRATED CIRCUITS Prepared b y Bill Blood A p p lic a tio n s Engineering c T his M ECL a rticle circu its describes used to some of in te rfa c e the w ith signals n o t m eeting M E C L in p u t or o u t­


    OCR Scan     		PDF AN720/D AN-720 mc10116 MC10116 application MC10124 application MC10125 application MC10125 MC10128 AN-720 MC10124 MC10129 MCI650

    HA2720

    Abstract: HA-2725 HA-2720 HA2725 ha1272 ha22720 transistor code 458 055 HA2-2720
    Text: 720/25 HARRI Description • Wide Programming Range H A -2 7 2 0 /2 7 2 5 prog ra m m a ble am plifiers are internally co m pe n sa te d m o n o lith ic device s o ffe rin g a w id e range of perform ance, th a t can be co ntro lle d b y a djusting the c irc u its ' 'set' c u rren t Is e t - B y m eans o f adju stin g an


    OCR Scan     		PDF 5KHzto10MHz HA-2720/2725 43D5S71 T-90-20 HA2720 HA-2725 HA-2720 HA2725 ha1272 ha22720 transistor code 458 055 HA2-2720

    B 722 P

    Abstract: BB 722 DC DC BB 722
    Text: SIEMENS NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance BF 720 BF722 • Complementary types: BF 721/723 PNP


    OCR Scan     		PDF BF722 Q62702-F1238 Q62702-F1306 OT-223 B 722 P BB 722 DC DC BB 722

    ABE 721

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon High-Voltage Transistors BF 720 BF 722 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 721/723 PNP


    OCR Scan     		PDF Q62702-F1238 Q62702-F1306 OT-223 A23SbGS ABE 721

    B 722 P

    Abstract: f1306
    Text: NPN Silicon High-Voltage Transistors BF 720; BF 722 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage Low capacitance Complementary types: BF 721/723 PNP Type M arking


    OCR Scan     		PDF F1238 Q62702 F1306 OT-223 OT-223 BF720 B 722 P f1306

    C2060

    Abstract: 2060D c3075
    Text: Photo Transistors T yp e No. TPS601A TPS603A TPS604 Features TO -18 with lens can <t>3 T0-18(with lenscanand base) Max mum Ratings (Ta= 25°C) Collector Emitter Voltage Collector Power Dissipation Operating Temperature (m W ) (V ) CC ) 40 150 —40~+125


    OCR Scan     		PDF TPS601A TPS603A TPS604 TPS605 TPS612 TPS613 TPS614 TPS615 TPS616 TPS617 C2060 2060D c3075

    Untitled

    Abstract: No abstract text available
    Text: 3SE D • 0231*320 G01b7b2 7 « S I P NPN Silicon High-Voltage Transistors BF 720; BF 722 _SIEMENS/ SPCL-, SEMICONDS T - 33- OS' Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage


    OCR Scan     		PDF G01b7b2 12-mm Q62702 F1238 OT-223 F1306 BF720 flS3b32Q Q01b7bS