Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    A 4X TRANSISTOR Search Results

    A 4X TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A 4X TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    QVE00033

    Abstract: No abstract text available
    Text: Transmissive Opto Sensors Surface Mount Switch 2 mm Gap Analog – High Resolution 0.016 (0.40) 0.079 (2.00) 0.159 (4.05) 0.099 (2.50) 0.020 (0.50) (4X) SECTION "A-A" 0.276 (7.00) 0.240 (6.10) "A" 0.146 (3.70) 0.213 (5.40) DIMPLE 0.010 (0.25) (4X) "A" 0.295 (7.50)


    Original     		PDF QVE00033 for120 QVE00033

    HL-94V-0

    Abstract: HL94V-0 QVE00033 slotted optical switch OPTICAL INTERRUPTER SWITCH
    Text: PHOTOTRANSISTOR OPTICAL SURFACE MOUNT INTERRUPTER SWITCH PRELIMINARY QVE00033 PACKAGE DIMENSIONS 0.016 0.40 center of light path 0.079 (2.00) 0.049 (1.25) 0.159 (4.05) 0.165 (4.2) 0.099 (2.50) 0.020 (0.50) (4X) SECTION "A-A" 0.276 (7.00) 0.240 (6.10) "A"


    Original     		PDF QVE00033 QVE00033 HL-94V-0 HL94V-0 slotted optical switch OPTICAL INTERRUPTER SWITCH

    AJT150

    Abstract: ASI10548
    Text: AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AJT150 is a common base RF power transistor primarily designed for pulsed avionics applications such as, mode-s TCAS and JTIDS. A 4x .062 x 45° 2xB C F E D G 2xR FEATURES:


    Original     		PDF AJT150 AJT150 ASI10548

    ASI10648

    Abstract: TVU020
    Text: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is Designed for PACKAGE STYLE .400 BAL FLG A FEATURES: A B FULL R 4X.060 R • Input Matching Network • • Omnigold Metalization System C E P D F H K MAXIMUM RATINGS 11.0 A VCBO 60 V


    Original     		PDF TVU020 TVU020 ASI10648 ASI10648

    Untitled

    Abstract: No abstract text available
    Text: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm


    Original     		PDF AJT015 AJT015

    AM82731-003

    Abstract: TRANSISTOR RF 1003 333p
    Text: AM82731-003 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2NL FLG The AM82731-003 is a Common Base Device Designed for Pulsed SBand Radar Pulse Driver Applications. A FEATURES INCLUDE: .025 x 45° 4x .062 x 45° 2X B • Input/Output Matching • Gold Metallization


    Original     		PDF AM82731-003 AM82731-003 TRANSISTOR RF 1003 333p

    AM82731-001

    Abstract: 395 transistor TRANSISTOR RF 1003 m 052
    Text: AM82731-001 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2NL FLG The AM82731-001 is a Common Base Device Designed for Pulsed SBand Radar Amplifier Applications. A FEATURES INCLUDE: .025 x 45° 4x .062 x 45° 2X B • Input/Output Matching • Gold Metallization


    Original     		PDF AM82731-001 AM82731-001 395 transistor TRANSISTOR RF 1003 m 052

    j48 transistor

    Abstract: TRANSISTOR j4 ASI10545 AJT015
    Text: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm


    Original     		PDF AJT015 AJT015 j48 transistor TRANSISTOR j4 ASI10545

    AVD400

    Abstract: ASI10567 818 transistor
    Text: AVD400 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVD400 is a silicon NPN power transistor, designed for high power and low duty cycle DME and IFF applications. A 4x .062 x 45° 2xB .040 x 45° C F E D G FEATURES: I


    Original     		PDF AVD400 AVD400 ASI10567 818 transistor

    AVF450

    Abstract: D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166
    Text: AVF450 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVF450 is a high power common base bipolar transistor. It is designed for pulse applications for TACAN in 1030-1-90 MHz band. A 4x .062 x 45° 2xB C F E D G I FEATURES:


    Original     		PDF AVF450 AVF450 ASI10575 D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166

    ARU300

    Abstract: ASI10549 AUR300
    Text: AUR300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR 300 is Designed for Class C UHF Radar Applications up to 500 MHz. PACKAGE STYLE .400 BAL FLG A A B FULL R FEATURES: 4X.060 R C • Internal Input Matching Network • PG = 9.5 dB at 300 W/500 MHz


    Original     		PDF AUR300 ARU300 ARU300 ASI10549 AUR300

    Untitled

    Abstract: No abstract text available
    Text: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The AUR 500 is designed for high peak power & low duty cycle applications, in the 400-500 MHz. A B C C FULL R 4X.060 R B E P D FEATURES: • Internal Input Matching Network


    Original     		PDF AUR500 ASI10550

    ic 210

    Abstract: ASI10549 AUR300
    Text: AUR300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR 300 is Designed for Class C UHF Radar Applications up to 500 MHz. PACKAGE STYLE .400 BAL FLG A A B FULL R FEATURES: 4X.060 R C • Internal Input Matching Network • PG = 9.5 dB at 300 W/500 MHz


    Original     		PDF AUR300 ic 210 ASI10549 AUR300

    AM1214-300

    Abstract: No abstract text available
    Text: AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base


    Original     		PDF AM1214-300 AM1214-300

    AM1214-300

    Abstract: No abstract text available
    Text: AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base


    Original     		PDF AM1214-300 AM1214-300

    Untitled

    Abstract: No abstract text available
    Text: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The AUR 500 is designed for high peak power & low duty cycle applications, in the 400-500 MHz. A B C C FULL R 4X.060 R B E P D FEATURES: • Internal Input Matching Network


    Original     		PDF AUR500 21EFERENCE AUR500

    AUR500

    Abstract: ASI10550
    Text: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR 500 is Designed for UHF Radar and Pulsed signal apps PACKAGE STYLE .400 BAL FLG A A B FEATURES: FULL R 4X.060 R • Input Matching Network • • Omnigold Metalization System C E P D F H K J


    Original     		PDF AUR500 ASI10550 AUR500 ASI10550

    AM81214-300

    Abstract: AM81214-30 k 118
    Text: AM81214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM81214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base


    Original     		PDF AM81214-300 AM81214-300 AM81214-30 k 118

    ASI10549

    Abstract: AUR300
    Text: AUR300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR 300 is Designed for PACKAGE STYLE .400 BAL FLG A A B FEATURES: FULL R 4X.060 R • Input Matching Network • • Omnigold Metalization System C E P D F H K J G I N MAXIMUM RATINGS L M 21.6 A


    Original     		PDF AUR300 ASI10549 ASI10549 AUR300

    D 1803 TRANSISTOR

    Abstract: 333 045 ALR175 transistor 1803
    Text: ALR175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI ALR175 is common Base transistor Designed for 1215 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D G FEATURES: L N 14 A PDISS 45 V TSTG -65 °C to +200 °C


    Original     		PDF ALR175 ALR175 D 1803 TRANSISTOR 333 045 transistor 1803

    ALR325

    Abstract: ASI10516
    Text: ALR325 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG A A 4x .062 x 45° DESCRIPTION: 2xB .040 x 45° C The ASI ALR325 is Designed for F E D G FEATURES: I • Input Matching Network • • Omnigold Metalization System L N 18.75 A 55 V VCC PDISS


    Original     		PDF ALR325 ALR325 CHARACTE03 ASI10516 ASI10516

    k 118

    Abstract: AJT150 ASI10548 a 4x transistor
    Text: AJT150 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG A DESCRIPTION: A 4x .062 x 45° 2xB The ASI AJT150 is Designed for .040 x 45° C F E D FEATURES: G • Input Matching Network • • Omnigold Metalization System I L N 10 A 60 V VCB VCE


    Original     		PDF AJT150 AJT150 ASI10548 k 118 ASI10548 a 4x transistor

    transistor 2x

    Abstract: 55JT 010US d 686
    Text: 2X 0 STYLE 1: PIN 1 = COLLECTOR 2X 2 = BASE (4X ) 3 = EMITTER (2X ) STYLE 2: PIN 1 = COLLECTOR (2X ) 2 = EMITTER (4X ) 3 = BASE (2X ) DIM MILLIMETER A 9.1 4 B 12.70 s 2X K TOL .13 .13 INCHES .360 .500 .03 .05 TOL .005 .005 +.001 -.002 .005 .005 .005 .005


    OCR Scan     		PDF

    70910

    Abstract: transistor cny CNY17F-1X E91231
    Text: ISOCOM COMPONENTS LTD HôfibSlO QQQOSSM 4 • ISO 45E D CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X is OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT DESCRIPTION The CNY 17 is a optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a


    OCR Scan     		PDF 46fibSlQ 17F-1X, 17F-2X, 17F-3X, 17F-4X IF-20mA) 70910 transistor cny CNY17F-1X E91231