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    A 27631 TRANSISTOR Search Results

    A 27631 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A 27631 TRANSISTOR Datasheets Context Search

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    A 27631 transistor

    Abstract: 27631 A 27631 AP 27631 2763 LA 4224 2SC4224
    Text: Ordering number: EN 2763 h SAW O No.2763 2SC4224 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications i Features . High breakdown voltage, high reliability . Fast switching speed tf:0.1us typ . Wide ASO . Adoption of MBIT process


    OCR Scan     		PDF 2SC4224 PWg30Ops A 27631 transistor 27631 A 27631 AP 27631 2763 LA 4224 2SC4224