DSEP 12A
Abstract: ixys dsep A605
Text: DSEP 30-12A DSEP 30-12AR HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 1200 1200 Type A C DSEP 30-12A DSEP 30-12AR ISOPLUS 247TM TO-247 AD Version A Version AR C C A A C TAB TAB A = Anode, C = Cathode
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0-12A
30-12AR
247TM
O-247
DSEP 12A
ixys dsep
A605
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Untitled
Abstract: No abstract text available
Text: DSEP 15-12CR HiPerDynFREDTM Epitaxial Diode IFAV = 15 A VRRM = 1200 V trr = 20 ns with soft recovery Electrically Isolated Back Surface Preliminary Data VRSM VRRM V V 1200 1200 Type A C ISOPLUS 247TM C DSEP 15-12CR A Isolated back surface * A = Anode, C = Cathode
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15-12CR
247TM
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30-12CR
Abstract: No abstract text available
Text: DSEP 30-12CR Advanced Technical Information HiPerDynFREDTM IFAV = 30 A VRRM = 1200 V trr = 20 ns with soft recovery Electrically Isolated Back Surface VRSM VRRM V V 1200 1200 Type A C ISOPLUS 247TM C A Isolated back surface * DSEP 30-12CR A = Anode, C = Cathode
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30-12CR
247TM
247TM
30-12CR
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Untitled
Abstract: No abstract text available
Text: DSEC 16-12AS HiPerFREDTM Epitaxial Diode IFAV = 2x10 A VRRM = 1200 V trr = 40 ns with common cathode and soft recovery VRSM VRRM V V 1200 1200 Type A C A TO-263 AB A A DSEC 16-12AS C TAB A = Anode, C/TAB = Cathode Symbol Conditions Maximum Ratings IFRMS
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16-12AS
O-263
6-12A
20080811a
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Untitled
Abstract: No abstract text available
Text: DSEP 60-12A HiPerFREDTM Epitaxial Diode IFAV = 60 A VRRM = 1200 V trr = 40 ns with soft recovery Preliminary Data VRSM VRRM V V 1200 1200 Type A C TO-247 AD C DSEP 60-12A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings
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0-12A
O-247
D98004E
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Untitled
Abstract: No abstract text available
Text: DSEP 12-12A HiPerFREDTM Epitaxial Diode IFAV = 15 A VRRM = 1200 V trr = 40 ns with soft recovery Preliminary Data VRSM VRRM V V 1200 1200 Type A C TO-220 AC C DSEP 12-12A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings
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2-12A
O-220
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LC-1000-100
Abstract: LC8001
Text: DC Ammeter Shunts STD Accuracy ± 0.25% TYPE LC: 800 through 1200 Amperes TYPE LC: 50 mV Catalog AMP A Number LC-800-500 800 2.16 LC-1000-50 1000 2.16 LC-1200-50 1200 2.16 TYPE LC: 100 mV Catalog AMP A Number LC-800-1000 800 2.68 LC-1000-100 1000 2.68 LC-1200-100 1200 2.68
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LC-800-500
LC-1000-50
LC-1200-50
LC-800-1000
LC-1000-100
LC-1200-100
LC8001
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2x61-12A
Abstract: 60-12A
Text: DSEP 2x 60-12A HiPerFREDTM Epitaxial Diode IFAV = 2x 60 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 miniBLOC, SOT-227 B Type DSEP 2x 60-12A Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 80°C; rectangular, d = 0.5 100 60 A A
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0-12A
OT-227
torqu200
2x61-12A
2x61-12A
60-12A
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Untitled
Abstract: No abstract text available
Text: DSEP 29-12A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V Type C A TO-220 AC C 1200 1200 DSEP 29-12A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 115°C; rectangular, d = 0.5
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9-12A
O-220
20091012a
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dsep 12-12a
Abstract: 12-12a 1212a
Text: DSEP 12-12A HiPerFREDTM Epitaxial Diode IFAV = 15 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 Type A C TO-220 AC C DSEP 12-12A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 125°C; rectangular, d = 0.5
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2-12A
O-220
dsep 12-12a
12-12a
1212a
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DSEP 12A
Abstract: ixys dsep 8-12a ixys 8-12a 40 khz ultrasonic us-100 DSEP 8 12a diode 10a 600v
Text: DSEP 8-12A HiPerFREDTM Epitaxial Diode IFAV = 10 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 Type A C TO-220 AC C DSEP 8-12A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 115°C; rectangular, d = 0.5
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O-220
DSEP 12A
ixys dsep 8-12a
ixys 8-12a
40 khz ultrasonic us-100
DSEP 8 12a
diode 10a 600v
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Untitled
Abstract: No abstract text available
Text: DSEP 29-12A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 Type A C TO-220 AC C DSEP 29-12A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 115°C; rectangular, d = 0.5
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9-12A
O-220
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Untitled
Abstract: No abstract text available
Text: DSEP 29-12A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V Type C A TO-220 AC C 1200 1200 DSEP 29-12A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 115°C; rectangular, d = 0.5
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9-12A
O-220
20091012a
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CLA 80 E 1200
Abstract: VG2B
Text: CLA 30 E 1200 HB V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 30 A 47 A Part number 2 CLA 30 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip
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O-247
60747and
20110209d
CLA 80 E 1200
VG2B
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DLA60I1200HA
Abstract: No abstract text available
Text: DLA 60 I 1200 HA tentative VRRM = I FAV = VF = Low Voltage Standard Rectifier Single Diode 1200 V 60 A 1V Part number DLA 60 I 1200 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current
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O-247
60747and
DLA60I1200HA
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IXSN55N120A
Abstract: on 3150
Text: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous
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55N120A
OT-227
IXSN55N120A
on 3150
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IXYS DS
Abstract: No abstract text available
Text: VUE 75-12NO7 ECO-PAC TM Threee Phase Rectifier Bridge IdAV = 74 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED Preliminary Data VRSM VRRM V V 1200 1200 D Typ VUE 75-12NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM
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75-12NO7
75-12NO7
55-12NO7
IXYS DS
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05464
Abstract: No abstract text available
Text: VUE 35-12NO7 ECO-PACTM Three Phase Rectifier Bridge IdAV = 40 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM V 1200 VRRM V 1200 Type D VUE 35-12NO7 A H N K Symbol Conditions IdAV IdAVM TC = 85°C, module IFSM TVJ = 45°C; VR = 0
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35-12NO7
26-12NO7
05464
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35-12NO7
Abstract: IXYS 30A diodes
Text: VUE 35-12NO7 ECO-PAC TM Three Phase Rectifier Bridge IdAV = 40 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ VUE 35-12NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM TVJ = 45°C VR = 0
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35-12NO7
26-12NO7
35-12NO7
IXYS 30A diodes
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Untitled
Abstract: No abstract text available
Text: DSEP 2x 25-12C HiPerDynFREDTM Epitaxial Diode IFAV = 2x 25 A VRRM = 1200 V trr = 20 ns with soft recovery Preliminary Data VRSM VRRM V V 1200 1200 miniBLOC, SOT-227 B Type DSEP 2x 25-12C Symbol Test Conditions IFRMS IFAVM IFRM TC = 70°C; rectangular, d = 0.5
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25-12C
OT-227
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DHG20I1200PA
Abstract: DHG20I1200HA
Text: DHG 20 I 1200 PA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1200 V 20 A 200 ns Part number DHG 20 I 1200 PA 3 1 Backside: cathode Features / Advantages: Applications:
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60747and
20110616a
DHG20I1200PA
DHG20I1200HA
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Untitled
Abstract: No abstract text available
Text: □IXYS DSEC 30-12A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Common Cathode and Soft Recovery V RSM V V RRM 2x15 A V RRM 1200 V t rr 40 ns TO -247 AD Type V 1200 1200 DSEC 30-12A A = Anode, C = Cathode, TAB = Cathode Symbol U rm s U avm
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0-12A
1500C
D2-31
D2-21
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Untitled
Abstract: No abstract text available
Text: OIXYS IGBT with Diode IXLK 35N120AU1 VCES = 1200 V = 58 A = 3.6 V C25 v CE sat High Short Circuit SOA Capability P re lim in a ry d a ta Symbol Test Conditions v CES v¥ T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 M il 1200 V cgr Maximum Ratings
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35N120AU1
O-264
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Untitled
Abstract: No abstract text available
Text: □IXYS IGBT Module VII100-12S4 Half-Bridge Configuration IC DC = 100 A V CES = 1200 V V CE(sat) = 3.4 V High Short Circuit SO A Capability Symbol Test Conditions Maximum Ratings V CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 MO 1200
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VII100-12S4
000E7SÃ
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