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    Y5117 Search Results

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    Y5117 Price and Stock

    Bel Power Solutions Y5117P

    DC DC CONVERTER 0.7-3.63V 62W
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    Infineon Technologies AG CY5117-1X07I

    INFINEON
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    ebm-papst R2E160-AY51-17

    AC BACKWARD-CURVED MOTORIZED IMP
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    DigiKey R2E160-AY51-17 Bulk 10
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    Avnet Americas R2E160-AY51-17 Bulk 19 Weeks 10
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    Mouser Electronics R2E160-AY51-17
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    Newark R2E160-AY51-17 Bulk 10
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    Master Electronics R2E160-AY51-17
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    Sager R2E160-AY51-17 1
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    SMC Corporation of America SS5Y51-17-DUZ01408

    17 STA MFLD ASSY, SY-1 SERIES | SMC Corporation SS5Y51-17-DUZ01408
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    RS SS5Y51-17-DUZ01408 Bulk 5 Weeks 1
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    SMC Corporation of America SS5Y51-17-DUB00074

    17 STA MANIFOLD W/ D-SUB, SY-1 SERIES | SMC Corporation SS5Y51-17-DUB00074
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    RS SS5Y51-17-DUB00074 Bulk 5 Weeks 1
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    Find more Y5117 price and stock on Findchips.com

    Y5117 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Y5117P Power-One Original PDF
    Y5117P Power-One DC DC Converters, Power Supplies - Board Mount, DC/DC CONVERT 0.7-3.63V 17A Original PDF
    Y5117PC Power-One 3.0V to 13.2V Input 0.7V to 3.63V Output Original PDF
    Y5117PC-T1 Power-One IC CONV DC-DC SNGL OUT STEP DOWN 3 TO 13.2VIN 25SIP T/R Original PDF
    Y5117PC-T2 Power-One IC CONV DC-DC SNGL OUT STEP DOWN 3 TO 13.2VIN 25SIP T/R Original PDF
    Y5117PG Power-One Original PDF
    Y5117P-T2 Power-One IC CONV DC-DC SNGL OUT STEP DOWN 3 TO 13.2VIN 25SIP T/R Original PDF
    Y5117P-T3 Power-One IC CONV DC-DC SNGL OUT STEP DOWN 3 TO 13.2VIN 25SIP T/R Original PDF
    Y5117XX-T1 Power-One 3.0V to 13.2V Input 0.7V to 3.63V Output Original PDF
    Y5117XX-T2 Power-One 3.0V to 13.2V Input 0.7V to 3.63V Output Original PDF

    Y5117 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PRESET 10Kohm

    Abstract: JESD-B103B Y5117PC
    Text: Y5117 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits  One part for different input and output voltage ranges  One part with up to 17A output  Reduces number of different parts in inventory  Compatible with conventional pick-and-place


    Original     		PDF Y5117 UL60950 10kOhm Y5117P MCD10186 18-Jun-10 PRESET 10Kohm JESD-B103B Y5117PC

    SR-332

    Abstract: Y5117P Y5117PC
    Text: Y5117 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits • One part for different input and output voltage ranges • One part with up to 17A output • Reduces number of different parts in inventory • Compatible with conventional pick-and-place


    Original     		PDF Y5117 Y5117P 10kOhm SR-332 Y5117P Y5117PC

    Untitled

    Abstract: No abstract text available
    Text: Y5117 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits • One part for different input and output voltage ranges • One part with up to 17A output • Reduces number of different parts in inventory • Compatible with conventional pick-and-place


    Original     		PDF Y5117 UL60950 10kOhm Y5117P

    PTC- 8100

    Abstract: No abstract text available
    Text: Y5117P 17A DC-DC POL Preliminary Data 3.0V to 13.2V Input • 0.7V to 3.6V Output Y5117P Member of the Family Industry First Vertical Surface Mount SIP Benefits • One part for different input & output voltage ranges • One part with up to 17A output • Reduces handling of multiple parts


    Original     		PDF Y5117P Y5117P 220uF ZGN27701L XMR037 XMR030 WWL201 Y-CTD227M10 Y-CNN475M25 WRM164 PTC- 8100

    B103

    Abstract: Y5117P 4.7uF 25V X7R C05C0
    Text: Y5117P 17A DC/DC Point of Load Converter 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Industry’s First Vertical Surface -Mount SIP Benefits • One part for different input & output voltage ranges • One part with up to 17A output • Reduces handling of multiple parts


    Original     		PDF Y5117P 220uF Y5117P B103 4.7uF 25V X7R C05C0

    Untitled

    Abstract: No abstract text available
    Text: Y5117P 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits • One part for different input and output voltage ranges • One part with up to 17A output • Reduces number of different parts in inventory • Compatible


    Original     		PDF Y5117P 13aluation 10kOhm Y5117P

    Untitled

    Abstract: No abstract text available
    Text: Y5117P 17A DC/DC Point of Load Converter 3.0V to 13.2V Input • 0.7V to 3.63V Output Preliminary Member of the Family Industry’s First Vertical Surface-Mount SIP Benefits • One part for different input & output voltage ranges • One part with up to 17A output


    Original     		PDF Y5117P 220uF Y5117P

    JESD-B103-B

    Abstract: 3 pin preset resistor 10k SR-332 Y5117P Y5117PC
    Text: Y5117 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits • One part for different input and output voltage ranges • One part with up to 17A output • Reduces number of different parts in inventory • Compatible with conventional pick-and-place


    Original     		PDF Y5117 Y5117P 10kOhm JESD-B103-B 3 pin preset resistor 10k SR-332 Y5117P Y5117PC

    Untitled

    Abstract: No abstract text available
    Text: Y5117 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits • One part for different input and output voltage ranges • One part with up to 17A output • Reduces number of different parts in inventory • Compatible with conventional pick-and-place


    Original     		PDF Y5117 Y5117P 10kOhm

    HY5117404a

    Abstract: KRAH
    Text: “H Y U N D A I ^Y5117404A, HY5116404A 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode


    OCR Scan     		PDF Y5117404A, HY5116404A HY5117404AJ HY5117404ASLJ HY5117404AT HY5117404ASLT HY5116404AJ HY5116404ASLJ HY5116404AT HY5116404ASLT HY5117404a KRAH

    HY5117404A

    Abstract: HY5117404Aj
    Text: HYUNDAI Y5117404A Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The Y5117404A utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117404A Y5117404A q0083 27BSC 1AD38-10-MAY95 5117404AJ HY5117404ASLJ HY5117404Aj

    jc 216 sc

    Abstract: 1MX1
    Text: Y5117100 Series •HYUNDAI 16Mx 1-bit C M O S DRAM DESCRIPTION The H Y5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The Y5117100 utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5117100 Y5117100 1AD04-20-MAR94 HY5117100JC Y5117100U HY5117100TC HY5117100LTC jc 216 sc 1MX1

    HYM536410CM

    Abstract: No abstract text available
    Text: -HYUNDAI - • HYM536410C M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410C M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM m odule consisting o f eight H Y5117400C in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    OCR Scan     		PDF HYM536410C 4Mx36 4Mx36-bit Y5117400C HY514100A HYM536410CM HYM536410CMG 72-Pin

    HY5117404

    Abstract: HYM532414A
    Text: «HYUNDAI HYM532414A M-Series 4Mx32-bit CMOS SDRAM MODULE with EXTENDED DATA OUT DESCRIPTION The H YM 532414A is a 4M x 32-bit EDO mode C M O S DRAM module consisting of eight H Y5117404A in 24/26 pin SOJ or TSO PII on a 72 pin glass-epoxy printed circuit board. 0.1* -and 0.01* «decoupling are


    OCR Scan     		PDF HYM532414A 4Mx32-bit 32414A 32-bit Y5117404A 532414AM/ASLM/ATM/ASLTM 532414AM 96C94 72pin HY5117404

    Untitled

    Abstract: No abstract text available
    Text: Y5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The Y5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The Y5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400A HY5117400A 117400A 1AD27-10-MAY9S HY5117400AJ HY5117400AT Y5117400ASLT HY5117400AR

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 1 7 1 0 0 SEMICONDUCTOR Series 16Mx 1-bit CM OS DRAM DESCRIPTION The Y5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The Y5117100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5117100 1AD04-10-APR93 HY5117100JC HY5117100UC HY5117100TC HY5117100LTC HY5117100RC

    1MX16BIT

    Abstract: 16MX1
    Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE


    OCR Scan     		PDF 256Kx4-bit, 1MX16BIT 16MX1

    PP-T20

    Abstract: HY5117400B bel power QBS
    Text: Y5117400B Series HYUNDAI 4M X 4-bit CM O S DRAM DESCRIPTION The Y5117400B is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The Y5117400B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400B HY5117400B Y5117400B 4b750fl 1AD46-00-MAY9S GG0457E HY5117400BJ HY5117400BSLJ PP-T20 bel power QBS

    HY5117400A

    Abstract: A1D10 HY5117400AJ60 HY5117400AJ 1AD27-10-MA HY5117400 AMO 0210 OH371
    Text: Y5117400A Series • H Y U N D A I 4M 4-bit CMOS DRAM X DESCRIPTION The Y5117400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he Y5117400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400A HY5117400A Y5117400A 1AD27-10-MA HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT A1D10 HY5117400AJ60 HY5117400 AMO 0210 OH371

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y M 5 6 4 4 1 4 A N - S e r i e s 4M X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM564414A is a 4M x 64-bit EDO m ode CMOS DRAM m odule consisting of sixteen Y5117404A in 24/28 pin SOJ o r TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.


    OCR Scan     		PDF 64-bit HYM564414A HY5117404A 16-bit HYM564414ANG/ATNG/ASLNG/ASLTNG 198-OmW DQ0-DQ63) 1EE15-10-JAN95

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260

    Untitled

    Abstract: No abstract text available
    Text: • ‘H Y U N D A I * Y5117800C,HY5116800C > 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynam ic RAM organized 2 ,0 9 7 ,1 5 2 x 8-bit configuration with Fast P age m ode C M O S DRA M s. Fast Page mode is a kind of page mode which is useful for the read operation. T h e circuit and process design allow this


    OCR Scan     		PDF HY5117800C HY5116800C

    rsst5

    Abstract: No abstract text available
    Text: “HYUNDAI Y5117404B Series 4M x 4-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The Y5117404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The Y5117404B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117404B Y5117404B 1AD45-00-MAY95 HY5117404BJ HY5117404BLJ HY5117404BAT HY5117404BSLT rsst5

    HY5117404A

    Abstract: HY5117404AJ60 HY5117404ASLT60 AMO 0210 1A038 VH77 AHC28 HY5117404 hy5117
    Text: “H Y U N D A I Y5117404A Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The Y5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The Y5117404A utilizes Hyundai’s CM OS silicon gate process technology as w ell as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117404A 1AD38-10-MAY95 0D45DG HY5117404AJ HY5117404ASLJ HY5117404AT HY5117404AJ60 HY5117404ASLT60 AMO 0210 1A038 VH77 AHC28 HY5117404 hy5117