2SB0709A
Abstract: 2SB709A XN06401 XN6401 206F
Text: Composite Transistors XN06401 XN6401 Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10
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XN06401
XN6401)
2SB0709A
2SB709A
XN06401
XN6401
206F
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06401 (XN6401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
XN06401
XN6401)
2SB0709A
2SB709A)
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2SB0709A
Abstract: 2SB709A XN06401 XN6401
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06401 (XN6401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05
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2002/95/EC)
XN06401
XN6401)
2SB0709A
2SB709A
XN06401
XN6401
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2SB0709A
Abstract: 2SB709A XN06401 XN6401
Text: Composite Transistors XN06401 XN6401 Silicon PNP epitaxial planer transistor ● 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SB0709A(2SB709A) x 2 elements 0 to 0.1
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XN06401
XN6401)
2SB0709A
2SB709A)
2SB709A
XN06401
XN6401
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2SB0709A
Abstract: 2SB709A XN06401 XN6401
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06401 (XN6401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
XN06401
XN6401)
2SB0709A
2SB709A
XN06401
XN6401
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2SB0709A
Abstract: 2SB709A XN06401 XN6401
Text: Composite Transistors XN06401 XN6401 Silicon PNP epitaxial planer transistor Unit: mm For general amplification +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –60 V Rating Collector to emitter voltage of Emitter to base voltage
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XN06401
XN6401)
2SB0709A
2SB709A
XN06401
XN6401
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06401 (XN6401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des
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2002/95/EC)
XN06401
XN6401)
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2SB709A
Abstract: XN6401
Text: Composite Transistors XN6401 Silicon PNP epitaxial planer transistor Unit: mm For general amplification +0.2 2.8 –0.3 +0.25 3 Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO –60 V Rating Collector to emitter voltage of Emitter to base voltage
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XN6401
100Hz
10kHz
270Hz
2SB709A
XN6401
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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OCR Scan
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N12861
N13801
MN1381
N13811
N13821
N150402
15P0802
N150412
MN15151
MN152121
transistor a2160
transistor A1270
A1270 transistor
transistor 2sD 4515
1431T transistor
transistor A769
mini circuits 15542
A1270 Y
AN 5606K
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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gn2011
Abstract: XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT
Text: • z s K e m m m * — 5/ Mini Type 6 -p in P ackage Outline Transistors, Diodes $ .-M { 6 f t ? ) U n it i mm S E ^ O S - S I O S i) ¿ P li/ 'f y 'T -'y V -i'X T h 7 > y ' 7 J 2 m ? *k iL tm , - is . i f H ■ 43 f t I L * « T A B U S ' < 7 > r -
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OCR Scan
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tiA-Ac37'
MA334
MA345
MA551
MA704
MA152WA
MA152WK
MA153
MA151WA
MA151WK
gn2011
XN7602
MA151WK
UN2212
1Ft 6PIN
M2D Package
m2b 160 le 4
5P J TRANSISTOR MARKING
3pin 20100
9YDT
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