2SD0814
Abstract: 2SD814 XN01507 XN1507
Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 5 2 Parameter (Ta=25˚C)
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XN01507
XN1507)
2SD0814
2SD814
XN01507
XN1507
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PDF
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 1.50+0.25 –0.05 3 Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.
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Original
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XN01507
XN1507)
2SD0814
2SD814)
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PDF
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2SD814
Abstract: XN1507
Text: Composite Transistors XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD814 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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Original
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XN1507
2SD814
2SD814
XN1507
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PDF
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2SD0814
Abstract: 2SD814 XN01507 XN1507
Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD0814(2SD814) x 2 elements +0.1 +0.2 1.1 -0.1
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Original
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XN01507
XN1507)
2SD0814
2SD814)
2SD814
XN01507
XN1507
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PDF
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2SD0814
Abstract: 2SD814 XN01507 XN1507
Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 5 2 1 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element Parameter 0 to 0.1 2SD0814(2SD814) x 2 elements ■ Absolute Maximum Ratings
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Original
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XN01507
XN1507)
2SD0814
2SD814)
2SD814
XN01507
XN1507
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PDF
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 1 • Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 150 V Rating Collector to emitter voltage
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Original
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XN01507
XN1507)
2SD0814
2SD814)
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PDF
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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OCR Scan
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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PDF
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5pin marking VJ
Abstract: marking AE 5pin AX05 N2211 9p marking 2SD601 Z 211H
Text: ^ S 5 S S í / ^ y*T — V Mini Type (5-pin) Package FET Transistors, FETs U n it : mm »•»fri i s-8:8t 0.6510.15 5 - M ( 5 îS i) /N " ^ - v ■>'■Ÿ < "J * T - X 7 ( i , S£#<D$ - m m v t m -E E } v n -S 3 - 4 b 7 > > * 2 4' a (7>a^-ib ft Jfc L t i l
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OCR Scan
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UN2215
2SD601
2SC3130
2SB709A
2SD601A
UN2112
UN2212
5pin marking VJ
marking AE 5pin
AX05
N2211
9p marking
Z 211H
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PDF
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