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White Electronic Designs Corp WED8L24514V10BC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	WED8L24514V10BC		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	WED8L24514V10BC		24			1 $100 10 $100 100 $80 1000 $80 10000 $80	Buy Now

WED8L24514V Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
WED8L24514V		White Electronic Designs	Asynchronous SRAM, 3.3V, 512Kx24		Original	PDF
WED8L24514V10BC		White Electronic Designs	Asynchronous SRAM, 3.3V, 512K x 24		Original	PDF
WED8L24514V12BC		White Electronic Designs	Asynchronous SRAM, 3.3V, 512K x 24		Original	PDF
WED8L24514V12BI		White Electronic Designs	Asynchronous SRAM, 3.3V, 512K x 24		Original	PDF
WED8L24514V15BC		White Electronic Designs	Asynchronous SRAM, 3.3V, 512K x 24		Original	PDF
WED8L24514V15BI		White Electronic Designs	Asynchronous SRAM, 3.3V, 512K x 24		Original	PDF

WED8L24514V Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: WED8L24514V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION  512Kx24 bit CMOS Static  Random Access Memory Array The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns	Original	PDF	WED8L24514V 512Kx24 512Kx24 WED8L24514VxxBC 512Kx8 WED8L24514V DSP5630x MO-163 WED8L24514V12BI WED8L24514V15BI
512kx8 Abstract: No abstract text available Text: WED8L24514V Asynchronous, 3.3V, 512Kx24 FEATURES 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24514V is ideal for creating a single	Original	PDF	WED8L24514V 512Kx24 512Kx24 MO-163) 14mmx22mm DSP5630xTM 512Kx8, WED8L24514V10BC WED8L24514V12BC WED8L24514V15BC 512kx8
Untitled Abstract: No abstract text available Text: WED8L24514V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V	Original	PDF	WED8L24514V 512Kx24 512Kx24 MO-163) 14mmx22mm DSP5630x 512Kx8, WED8L24514V10BC WED8L24514V12BC WED8L24514V15BC
ames 5 Abstract: WED8L24514V wed8l24514 Text: WED8L24514V Asynchronous SR AM, 3.3V SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION n 512Kx24 bit CMOS Static n Random Access Memory Array The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times, x24	Original	PDF	WED8L24514V 512Kx24 512Kx24 WED8L24514VxxBC 512Kx8 WED8L24514V DSP5630x WED8L24514V10BC WED8L24514V12BC ames 5 wed8l24514
29f040b Abstract: teradyne catalyst Stacked 4MB Flash and 1MB SRAM WED3C755E8MC FLF14 kyocera 128 cqfp CERAMIC QUAD FLATPACK CQFP 95613 hac 132 BAG PACKAGE TOP MARK tms320c6 Text: White Electronic Designs Table Of Contents Product Overview . 2 Commitment . 3	Original	PDF	DMD2006F 29f040b teradyne catalyst Stacked 4MB Flash and 1MB SRAM WED3C755E8MC FLF14 kyocera 128 cqfp CERAMIC QUAD FLATPACK CQFP 95613 hac 132 BAG PACKAGE TOP MARK tms320c6