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    Excelitas Technologies Corporation VTB8341H

    Diode, Photo, 920Nm, 60°; No. Of Pins:2Pins; Diode Case Style:Radial Leaded; Wavelength Of Peak Sensitivity:920Nm; Angle Of Half Sensitivity ±:60°; Dark Current:100Pa; Operating Temperature Min:-20°C; Operating Temperature Max:75°C Rohs Compliant: Yes |Excelitas Tech VTB8341H
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    VTB8341 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTB8341 PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB8341 EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB8341 EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB8341 EG&G Vactec VTB Process Photodiodes Scan PDF

    VTB8341 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB8341 PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes have very


    Original     		PDF VTB8341

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB8341H PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes have very


    Original     		PDF VTB8341H

    VTB8341H

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB8341H PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes have very


    Original     		PDF VTB8341H VTB8341H

    VTB8341

    Abstract: D320
    Text: VTB Process Photodiodes VTB8341 PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes have very


    Original     		PDF VTB8341 VTB8341 D320

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTB8440

    Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
    Text: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue


    Original     		PDF VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B

    VTP1220FBH

    Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
    Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0


    Original     		PDF 2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H

    Untitled

    Abstract: No abstract text available
    Text: VTB8341 VTB Process Photodiodes PACKAGE DIM ENSIONS inch mm 1.40 ( 3 5 .6 ) ( 3 .5 6 ) J .2 0 0 ( 5 .0 8 ) .2 6 2 ( 6 .6 5 ) NOM . -, .0 7 3 ( 1.8 5 ) 221 ( 5.611 .0 6 7 ( 1.7 0 ) Voc TC Voc Id R sh -20°C to 75°C Operating Temperature: -20°C to 75°C


    OCR Scan     		PDF VTB8341

    VTB8341

    Abstract: No abstract text available
    Text: VTB8341 VTB Process Photodiodes PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2l PRODUCT DESCRIPTION Planar silicon photodiode mounted on a tw o lead ceram ic substrate and coated with a thick layer of clear epoxy. These diodes offer very high shunt


    OCR Scan     		PDF VTB8341 VTB8341

    VTB8340

    Abstract: VTB8341
    Text: _ SbE D • 3 0 3 G b 0 T 0 0 0 1 0 S G bTfl IVCT V T B 8 3 4 0 , 8341 VTB Process Photodiodes Z 6 & 6 VACTE C T-41-51 PACKAGE DIMENSIONS inch mm CASE 11 PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy.


    OCR Scan     		PDF 0001QSQ VTB8340, T-41-51 VTB8340 VTB8341 28Circuit 100fc, 2850K 2x1012 VTB8340 VTB8341

    VTB8340

    Abstract: VTB8341
    Text: _ SbE D • aGBGbGT 0DD10SG VTB Process Photodiodes bT Ô I VCT V T B 8 3 4 0 , 8341 E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm 1 .4 0 ( 3 5 .6 ) M IN IM UM (3 .5 6 ) f .2 6 8 (6 .8 1 ) .2 6 2 ■0 7 3 ( 1 .8 5 ) .0 6 7 f 1 .7 0 1 CASE 11 PRODUCT DESCRIPTION


    OCR Scan     		PDF VTB8340, T-41-51 VTB8340 VTB8341 4x10-14 2x1012 7x1012 VTB8340 VTB8341