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    BAR80

    Abstract: VSO05553
    Text: BAR80 Silicon RF Switching Diode 3  Design for use in shunt configuration 4  High shunt signal isolation  Low shunt insertion loss 2 1 VSO05553 Type Marking BAR80 AAs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original
    PDF BAR80 VSO05553 Aug-17-2001 100MHz EHD07010 EHD07009 BAR80 VSO05553

    VSO05553

    Abstract: marking BAr
    Text: BAR 81 Silicon RF Switching Diodes 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VSO05553 Type Marking BAR 81 BBs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol


    Original
    PDF VSO05553 Oct-05-1999 VSO05553 marking BAr

    VSO05553

    Abstract: No abstract text available
    Text: BAR 80 Silicon RF Switching Diode 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VSO05553 Type Marking BAR 80 AAs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol


    Original
    PDF VSO05553 Oct-05-1999 100MHz EHD07010 EHD07009 VSO05553

    marking BBs

    Abstract: BAR81 VSO05553
    Text: BAR81 Silicon RF Switching Diodes 3  Design for use in shunt configuration 4  High shunt signal isolation  Low shunt insertion loss 2 1 VSO05553 Type Marking BAR81 BBs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original
    PDF BAR81 VSO05553 Aug-21-2001 marking BBs BAR81 VSO05553