UPG103P Search Results

UPG103P Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UPG103P		NEC	Gallium arsenide integrated circuit		Original	PDF
UPG103P		NEC	Low Noise Wideband Amplifier		Scan	PDF

UPG103P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
UPG103A Abstract: uPG103 UPG103B UPG103P TCB 44 Text: SEC LOW NOISE WIDE-BAND AMPLIFIER UPG103A UPG103B UPG103P FEATURES DESCRIPTION • ULTRA WIDE-BAND: 50 MHz to 3 GHz The UPG103 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. The device is most suitable for the IF stage of microwave communication	OCR Scan	PDF	UPG103A UPG103B UPG103P UPG103 UPG103P TCB 44
Untitled Abstract: No abstract text available Text: NEC LOW NOISE WIDE-BAND AMPLIFIER UPG103A UPG103B UPG103P FEATURES DESCRIPTION • ULTRA WIDE-BAND: 50 MHz to 3 GHz The UPG103 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. The device is most suitable for the IF stage of microwave communication	OCR Scan	PDF	UPG103A UPG103B UPG103P UPG103 UPG103P, UPG103A, UPG103B,
Untitled Abstract: No abstract text available Text: LOW NOISE WIDE-BAND AMPLIFIER UPG103B UPG103P EQUIVALENT CIRCUIT FEATURES_ • ULTRA WIDE-BAND: 50 MHz to 3 GHz • LOW NOISE: 4 dB TYP at f = 1 GHz vdd • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 i l • HERMETICALLY SEALED PACKAGES ASSURE	OCR Scan	PDF	UPG103B UPG103P UPG103 UPG103P, UPG103B.
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	PDF	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
prescaler 120 ghz Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V	OCR Scan	PDF