Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A6G Silicon PNP epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features • Suitable for high-density mounting and downsizing of the equipment
|
Original
|
PDF
|
2002/95/EC)
UNR31A6G
|
NP041A6
Abstract: UNR31A6
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP041A6 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 4 2 1.00±0.05 UNR31A6 x 2 0.10 1.00±0.04 3 (0.35) (0.35) 0.10 1
|
Original
|
PDF
|
2002/95/EC)
NP041A6
UNR31A6
NP041A6
UNR31A6
|
NP041A6
Abstract: UNR31A6
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP041A6 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 4 0 to 0.02 2 3 (0.35) (0.35) 1.00±0.05 UNR31A6 x 2 Display at No.1 lead
|
Original
|
PDF
|
2002/95/EC)
NP041A6
UNR31A6
NP041A6
UNR31A6
|
NP041A6
Abstract: UNR31A6
Text: Composite Transistors NP041A6 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 4 2 3 0.35 (0.35) 1.00±0.05 UNR31A6 x 2 Display at No.1 lead +0.03 (0.10) 0.37 -0.02 Absolute Maximum Ratings Ta = 25°C
|
Original
|
PDF
|
NP041A6
UNR31A6
NP041A6
UNR31A6
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP041A6 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 4 2 3 (0.35) (0.35) 1.00±0.05 UNR31A6 x 2 Display at No.1 lead +0.03
|
Original
|
PDF
|
2002/95/EC)
NP041A6
UNR31A6
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A6 Silicon PNP epitaxial planar type Unit: mm 0.33+0.05 –0.02 For digital circuits 0.10+0.05 –0.02 1 0.23+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05
|
Original
|
PDF
|
2002/95/EC)
UNR31A6
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP041A6 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 1 Basic Part Number 2 0.10 3 (0.35) (0.35) 1.00±0.05 UNR31A6 x 2
|
Original
|
PDF
|
2002/95/EC)
NP041A6
UNR31A6
|
Untitled
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR31A6 Silicon PNP epitaxial planar type Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 For digital circuits 1 0.23+0.05 –0.02 2 0.40 (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C 0.15 min. 0.15 min.
|
Original
|
PDF
|
UNR31A6
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A6 Silicon PNP epitaxial planar type Unit: mm 0.33+0.05 –0.02 For digital circuits 0.10+0.05 –0.02 1 0.23+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05
|
Original
|
PDF
|
2002/95/EC)
UNR31A6
|
UNR31A6G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A6G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C
|
Original
|
PDF
|
2002/95/EC)
UNR31A6G
UNR31A6G
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A6 Silicon PNP epitaxial planar type Unit: mm 0.33+0.05 –0.02 For digital circuits 0.10+0.05 –0.02 1 0.23+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05
|
Original
|
PDF
|
2002/95/EC)
UNR31A6
|
UNR31A6G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A6G Silicon PNP epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: CN • Pin Name 1: Base 2: Emitter
|
Original
|
PDF
|
2002/95/EC)
UNR31A6G
UNR31A6G
|
UNR31A6
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR31A6 Silicon PNP epitaxial planar transistor Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 For digital circuits 1 0.23+0.05 –0.02 2 0.40 (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C 0.15 min.
|
Original
|
PDF
|
UNR31A6
UNR31A6
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP041A6 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 4 2 3 (0.35) (0.35) 1.00±0.05 UNR31A6 x 2 Display at No.1 lead +0.03
|
Original
|
PDF
|
2002/95/EC)
NP041A6
UNR31A6
|
|
|
UNR31A6
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A6 Silicon PNP epitaxial planar type Unit: mm 0.33+0.05 –0.02 For digital circuits 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02 (0.40) (0.40) 0.80±0.05
|
Original
|
PDF
|
2002/95/EC)
UNR31A6
UNR31A6
|
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PDF
|
PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
|
ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP043A6 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.03 0.12 -0.02 4 1.00±0.05 Parameter Symbol Collector-base voltage
|
Original
|
PDF
|
2002/95/EC)
NP043A6
|
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
|
NP043A6
Abstract: UNR31A6 UNR32A6
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP043A6 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.03 0.12 -0.02 4 2 (0.35) (0.35) • Basic Part Number
|
Original
|
PDF
|
2002/95/EC)
NP043A6
NP043A6
UNR31A6
UNR32A6
|
NP043A6
Abstract: UNR31A6 UNR32A6
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP043A6 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.03 0.12 -0.02 4 2 1.00±0.05 Parameter Symbol Rating
|
Original
|
PDF
|
2002/95/EC)
NP043A6
NP043A6
UNR31A6
UNR32A6
|
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
|
UNR31AB
Abstract: matsushita pnp UNR31A1 UNR31A2 UNR31A4 UNR31AD UNR31AE UNR31AM UNR31AN UNR31AT
Text: Sheet No. 1/6 DESIGNED CHECKED CHECKED APPROVED inaiMfê/Product Specification m ^ / T y p e Number: U N R 3 Q [ Ä ] [ [ ] o o [ l ] 1 1) 1) M 1) ~fz^OA£MXK v U D y V-y yi/7^9 /Si 1icon Transistors ÍSE'J/Type ffliË/AppI icat ion ífliíl/Structure °]S£ffl/Digital Circuit
|
OCR Scan
|
PDF
|
UNR31AÃ
UNR32A
UNR31AB
matsushita pnp
UNR31A1
UNR31A2
UNR31A4
UNR31AD
UNR31AE
UNR31AM
UNR31AN
UNR31AT
|
