K 460
Abstract: UN2116 UN2216 UNR2116 UNR2216 XN04316 XN4316
Text: Composite Transistors XN04316 XN4316 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • UNR2216 (UN2216) + UNR2116 (UN2116)
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XN04316
XN4316)
UNR2216
UN2216)
UNR2116
UN2116)
K 460
UN2116
UN2216
UNR2116
UNR2216
XN04316
XN4316
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04216 Silicon NPN epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Basic Part Number • UNR2216 x 2 Parameter
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2002/95/EC)
XP04216
UNR2216
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UNR2216
Abstract: XP04216
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04216 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number • UNR2216 x 2 Parameter
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2002/95/EC)
XP04216
UNR2216
UNR2216
XP04216
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UNR2216
Abstract: XP04216
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04216 Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • UNR2216 x 2 • Code SMini6-G1 • Pin Name 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
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2002/95/EC)
XP04216
UNR2216
UNR2216
XP04216
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04316G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP04316G
UNR2216
UNR2116
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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UN2216
Abstract: UNR2216 XN04216 XN4216
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04216 (XN4216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number
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2002/95/EC)
XN04216
XN4216)
UN2216
UNR2216
XN04216
XN4216
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04316 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 M Di ain sc te on na tin nc ue e/ d • Features 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05
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2002/95/EC)
UP04316
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216 (XN6216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des
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2002/95/EC)
XN06216
XN6216)
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UN2216
Abstract: UNR2216 XP04216 XP4216
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04216 (XP4216) Silicon NPN epitaxial planar type 0.2±0.05 6 Unit: mm (0.425) For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP04216
XP4216)
UN2216
UNR2216
XP04216
XP4216
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04316 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 • Features 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package
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UP04316
UNR2216
UNR2116
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01216 (XN1216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 0.4±0.2 • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)
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2002/95/EC)
XN01216
XN1216)
UNR2216
UN2216)
|
|
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UNR2216
Abstract: XP06216
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06216 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
XP06216
UNR2216
UNR2216
XP06216
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UN2216
Abstract: UNR2216 XN02216 XN2216
Text: Composite Transistors XN02216 XN2216 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 2 1 (0.65) 0.30+0.10 –0.05 1.1+0.2 –0.1 Parameter Collector-base voltage (Emitter open)
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XN02216
XN2216)
SC-74A
UN2216
UNR2216
XN02216
XN2216
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UNR2116
Abstract: UNR2216 XN04316G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04316G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) M Di ain sc te on na tin nc ue e/ d For switching/digital circuits • Features ue
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2002/95/EC)
XN04316G
UNR2116
UNR2216
XN04316G
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UN2216
Abstract: UNR2216 XP06216 XP6216
Text: Composite Transistors XP06216 XP6216 Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
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XP06216
XP6216)
UN2216
UNR2216
XP06216
XP6216
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UNR2216
Abstract: XN06216G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216G Silicon NPN epitaxial planar type For switching/digital circuits • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo
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2002/95/EC)
XN06216G
UNR2216
XN06216G
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UNR2216
Abstract: XN04216G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04216G Silicon NPN epitaxial planar type For switching circuits/digital circuits • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo
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2002/95/EC)
XN04216G
UNR2216
XN04216G
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XP01216
Abstract: UNR2216
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01216 Silicon NPN epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)
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2002/95/EC)
XP01216
UNR2216
XP01216
UNR2216
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UNR2210
Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou
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2002/95/EC)
UNR221x
UN221x
UNR2210
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
UNR2216
UNR2217
UNR2218
UNR2219
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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UNR2210
Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and
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2002/95/EC)
UNR221x
UN221x
UNR2210
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
UNR2216
UNR2217
UNR2218
UNR2219
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