UNR2112
Abstract: XP06112
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06112 Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number • UNR2112 x 2 Parameter
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XP06112
UNR2112
UNR2112
XP06112
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ft 103
Abstract: LD-5461BS 1414C BTA136 D1555 TLP434A UN2112 UN2212 UNR2112 UNR2212
Text: Composite Transistors XN04312 XN4312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • UNR2212 (UN2212) + UNR2112 (UN2112)
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XN04312
XN4312)
UNR2212
UN2212)
UNR2112
UN2112)
ft 103
LD-5461BS
1414C
BTA136
D1555
TLP434A
UN2112
UN2212
UNR2112
UNR2212
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PDF
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UNR2112
Abstract: XP06112
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06112 Silicon PNP epitaxial planar type For digital circuits • Package ■ Features • UNR2112 x 2 • Code SMini6-G1 • Pin Name 1: Emitter (Tr1) 2:Emitter (Tr2) 3:Base (Tr2)
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XP06112
UNR2112
UNR2112
XP06112
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SSMini6-F1 Package
Abstract: UNR2112 UP04112
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04112 Silicon PNP epitaxial planar type For digital circuits 4 M Di ain sc te on na tin nc ue e/ d 5° (0.20) UNR2112 x 2 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 ue
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2002/95/EC)
UP04112
UNR2112
SSMini6-F1 Package
UNR2112
UP04112
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unr211
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)
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2002/95/EC)
UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
unr211
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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PDF
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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UN2112
Abstract: UN2212 UNR2112 UNR2212 XN0A312 XN1A312
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0A312 (XN1A312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 1 (0.65) 0.30+0.10
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XN0A312
XN1A312)
UN2112
UN2212
UNR2112
UNR2212
XN0A312
XN1A312
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XN4112
Abstract: UN2112 UNR2112 XN04112
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04112 (XN4112) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number
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2002/95/EC)
XN04112
XN4112)
XN4112
UN2112
UNR2112
XN04112
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XN04312
Abstract: UN2112 UN2212 UNR2112 UNR2212 XN4312
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04312 (XN4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05
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2002/95/EC)
XN04312
XN4312)
UNR2212
UN2212)
UNR2112
UN2112)
XN04312
UN2112
UN2212
UNR2112
UNR2212
XN4312
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04112 Silicon PNP epitaxial planar type For digital circuits 5 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP04112
UNR2112
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 M Di ain sc te on na tin nc ue e/ d • Features ■ Basic Part Number Rating Unit
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2002/95/EC)
UP04312
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04312 (XN4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)
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2002/95/EC)
XN04312
XN4312)
UNR2212
UN2212)
UNR2112
UN2112)
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|
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UP04112
Abstract: UNR2112
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04112 Silicon PNP epitaxial planar type For digital circuits 5 4 1.20±0.05 Two elements incorporated into one package (Transistors with built-in resistor) SSMini type package, reduction of the mounting area and assembly cost
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UP04112
UNR2112
UP04112
UNR2112
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UN2112
Abstract: UN2212 UNR2112 UNR2212 XP04312 XP4312
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04312 (XP4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP04312
XP4312)
UNR2212
UN2212)
UNR2112
UN2112)
UN2112
UN2212
UNR2112
UNR2212
XP04312
XP4312
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PDF
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XP06112 XP6112 Silicon PNP epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
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XP06112
XP6112)
UNR2112
UN2112)
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04112 (XP4112) Silicon PNP epitaxial planar type 0.2±0.05 6 Unit: mm (0.425) For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP04112
XP4112)
UNR2112
UN2112)
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PDF
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UNR2112
Abstract: UNR2212 UP04312
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits M Di ain sc te on na tin nc ue e/ d Collector-base voltage
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UP04312
UNR2112
UNR2212
UP04312
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UNR2110
Abstract: UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud
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UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
UNR2119
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PDF
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UNR2119
Abstract: UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118
Text: Transistors with built-in Resistor UNR211x Series UN211x Series Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2119
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
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PDF
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UN2112
Abstract: UN2212 UNR2112 UNR2212 XP04312 XP4312
Text: Composite Transistors XP04312 XP4312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor)
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XP04312
XP4312)
UNR2212
UN2212)
UNR2112
UN2112)
UN2112
UN2212
UNR2112
UNR2212
XP04312
XP4312
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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PDF
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN06112 XN6112 Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 1.1+0.2 –0.1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO
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XN06112
XN6112)
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