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Microchip Technology Inc UES1101 DIODE GEN PURP 50V 2A A AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UES1101	Bulk			100	1 - 10 - 100 $15.8701 1000 $15.8701 10000 $15.8701	Buy Now
Avnet Americas	UES1101	Reel		24 Weeks	100	1 - 10 - 100 $15.43716 1000 $14.37432 10000 $14.37432	Buy Now
	UES1101	Bulk		24 Weeks	100	1 - 10 - 100 $15.28692 1000 $14.22888 10000 $14.22888	Buy Now
Mouser Electronics	UES1101					1 - 10 - 100 $15.87 1000 $15.87 10000 $15.87	Get Quote
Newark	UES1101	Bulk			100	1 - 10 - 100 $15.87 1000 $15.26 10000 $15.26	Buy Now
Microchip Technology Inc	UES1101			24 Weeks		1 $17.09 10 $17.09 100 $17.09 1000 $17.09 10000 $17.09	Buy Now

Onlinecomponents.com	UES1101					1 - 10 - 100 $15.16 1000 $15.16 10000 $15.16	Buy Now
NAC	UES1101				20	1 $17.44 10 $17.44 100 $16.07 1000 $14.89 10000 $14.89	Buy Now
Master Electronics	UES1101					1 - 10 - 100 $15.16 1000 $15.16 10000 $15.16	Buy Now
Microchip Technology Inc UES1101SM DIODE GEN PURP 50V 2A A SQ-MELF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UES1101SM	Bulk			100	1 - 10 - 100 $21.5 1000 $21.5 10000 $21.5	Buy Now
Avnet Americas	UES1101SM	Bulk		24 Weeks	100	1 - 10 - 100 $20.70808 1000 $20.04648 10000 $20.04648	Buy Now
	UES1101SM	Reel		24 Weeks	100	1 - 10 - 100 $20.85832 1000 $20.19192 10000 $20.19192	Buy Now
Mouser Electronics	UES1101SM					1 - 10 - 100 $21.5 1000 $21.5 10000 $21.5	Get Quote
Newark	UES1101SM	Bulk			100	1 - 10 - 100 $21.5 1000 $20.68 10000 $20.68	Buy Now
Microchip Technology Inc	UES1101SM			24 Weeks		1 $23.15 10 $23.15 100 $23.15 1000 $23.15 10000 $23.15	Buy Now

NAC	UES1101SM				15	1 $23.63 10 $23.63 100 $21.76 1000 $20.17 10000 $20.17	Buy Now
Avnet Silica	UES1101SM			26 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	UES1101SM			25 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	UES1101SM					1 - 10 - 100 $20.53 1000 $20.53 10000 $20.53	Buy Now
Microchip Technology Inc UES1101SME3 DIODE GEN PURP 50V 2.5A A AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UES1101SME3	Bulk			100	1 - 10 - 100 $21.11 1000 $21.11 10000 $21.11	Buy Now
Avnet Americas	UES1101SME3	Bulk		24 Weeks	100	1 - 10 - 100 $20.31996 1000 $18.91932 10000 $18.91932	Buy Now
Newark	UES1101SME3	Bulk			100	1 - 10 - 100 $21.11 1000 $20.29 10000 $20.29	Buy Now
Microchip Technology Inc	UES1101SME3		290	24 Weeks		1 $22.73 10 $22.73 100 $22.73 1000 $22.73 10000 $22.73	Buy Now
NAC	UES1101SME3				15	1 $23.19 10 $23.19 100 $21.36 1000 $19.79 10000 $19.79	Buy Now

Master Electronics	UES1101SME3					1 - 10 - 100 $20.15 1000 $20.15 10000 $20.15	Buy Now
Microchip Technology Inc UES1101SM-TR DIODE GEN PURP 50V 2A A SQ-MELF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UES1101SM-TR	Reel			100	1 - 10 - 100 $21.65 1000 $21.65 10000 $21.65	Buy Now
Microchip Technology Inc UES1101SME3-TR DIODE GEN PURP 50V 2.5A A AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UES1101SME3-TR	Reel			100	1 - 10 - 100 $21.2701 1000 $21.2701 10000 $21.2701	Buy Now

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UES1101 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
UES1101	BKC International	2.5 Amp Voidless Fast Switching Rectifiers, Hard Glass Tungsten	Scan	PDF
UES1101	Microsemi	Rectifier	Scan	PDF
UES1101	Microsemi	Rectifiers, High Efficiency, 2.5A	Scan	PDF
UES1101	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
UES1101	Unitrode	International Semiconductor Data Book 1981	Scan	PDF

UES1101 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UES1101 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current2.5 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time25n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage975m @I(FM) (A) (Test Condition)2.0	Original	UES1101 Voltage50 Time25n Voltage975m Current50u	PDF
ZENER A25 Abstract: No abstract text available Text: ISCFdÈÕ T Õ T( text/html About News Contact keyword search: UES1101SM (#16634 Package Division Scottsdale Datasheet (none) Mil-Spec Shipping (none) TR7\1500cntTR7 Qual Data Contact Microsemi Symbol Max IO 2.5 A Reverse Voltage Vrwm 50 V Max Forward Surge Current	Original	UES1101SM 100ns) TR7\1500cntTR7 ZENER A25	PDF
Untitled Abstract: No abstract text available Text: DIGITRON SEMICONDUCTORS UES1101 – UES1103 2.5A HIGH-EFFICIENCY RECTIFIERS MAXIMUM RATINGS Rating Symbol UES1101 UES1102 UES1103 Peak inverse voltage VR 50 100 150 Maximum average DC output at TL = 75°C, L = 3/8” IO 2.5 A Non-repetitive surge current at 8.3ms	Original	UES1101 UES1103 UES1102 MIL-PRF-19500,	PDF
SMD Transistors w04 sot-23 Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.	Original	represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355	PDF
1N5806 Abstract: 1N5802 CMR3U-01 CPD17 UES1101 UES1106 Text: PROCESS CPD17 Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 14 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization	Original	CPD17 1N5802 1N5806 UES1101 UES1106 CMR3U-01 22-March 1N5806 CPD17 UES1106	PDF
BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587	PDF
1N5806 Abstract: UES1101 mesa die 1N5802 CMR3U-01 CPD17 UES1106 Text: PROCESS CPD17 Central Ultra Fast Rectifier TM Semiconductor Corp. 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization	Original	CPD17 1N5802 1N5806 UES1101 UES1106 CMR3U-01 19-September 1N5806 mesa die CPD17 UES1106	PDF
MUR1560 equivalent Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in	Original	MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent	PDF
1n5822 trr Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay	Original	MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50	PDF
OZ 9983 Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —	Original	MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45	PDF
Diode 1N4007 DO-7 Rectifier Diode Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced	Original	MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode	PDF
CAT7105CA Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A	Original	5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al	PDF
stpr16 Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •	Original	MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode	PDF
BYV27-50 Abstract: BYV27-100 BYV27-150 UES1103 UES1101 UES1100 Text: RECTIFIERS High Efficiency, 2.5A UES1101 UES1102 UES1103 FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package BYV27-50 BYV27-100 BYV27-150 DESCRIPTION An axial leaded power rectifier useful in many switching applications.	OCR Scan	UES1101 UES1102 UES1103 BYV27-50 BYV27-100 BYV27-150 UES1X02 UES1103 BYV27-150 UES1100	PDF

BKC Semiconductors Abstract: DSAIH0002563 UES1101 Text: 2.5 Amp Voidless Fast Switching Rectifiers UES1101 thru UES1103 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.	OCR Scan	UES1101 UES1103 UES1101 UES1103 117H33 BKC Semiconductors DSAIH0002563	PDF
UES1102 Abstract: UES1101 DO-213AB UES1103 BKC Semiconductors Text: 2.5 Amp Voidless Fast Switching Rectifiers UES1101 thru Applications UES1103 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are irnportant. They ar$ i# a i tor use in industrial, aircraft or satellite p d v^ ^ yj^ lies.	OCR Scan	UES1101 UES1103 UES1101 UES1102 UES1103 LL-41 DO-213AB) DO-213AB BKC Semiconductors	PDF
BKC Semiconductors Abstract: No abstract text available Text: 2.5 Amp Voidless Fast UES1101 Switching Rectifiers thru UES1103 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.	OCR Scan	UES1101 UES1103 con33 UES1101 UES1102 LL-41 DO-213AB) BKC Semiconductors	PDF
UES1101SM Abstract: No abstract text available Text: SURFACE MOUNT RECTIFIERS UES1101SM UES1102SM UES1103SM High Efficiency, 4.0A FEATURES DESCRIPTION • Small Convenient Surface Mount Package For use in high frequency power switching circuits, the UES1101SM series is specifically designed for surface mount applications when board space and surface	OCR Scan	UES1101SM UES1102SM UES1103SM UES1101SM 25nSec) ES1101SM UES11Q2SM	PDF
Untitled Abstract: No abstract text available Text: UNITRODE CORP 9347963 T2 UNITRODE Ï F \| i 3 4 7 c t,3 0011370 D 92D CORP 11378 UES1101SM UES1102SM UES1103SM 7 -6 ì - 17 SURFACE MOUNT RECTIFIERS High Efficiency, 4.0A FEATURES DESCRIPTION • Small Convenient Surface Mount Package For use in high frequency power switching circuits, the U ES1 101SM series is	OCR Scan	i347c UES1101SM UES1102SM UES1103SM 101SM 25nSec) 101SM ES1102SM ES1103SM	PDF
Untitled Abstract: No abstract text available Text: UESI101 UES1102 UES1103 RECTIFIERS High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are	OCR Scan	UESI101 UES1102 UES1103 BYV27-50 BYV27-100 BYV27-150 UES1101 100ms	PDF
Untitled Abstract: No abstract text available Text: RECTIFIERS U ESI 101 UESI102 UES1103 High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in m any switching applications. Particularly suited where very fast recovery and low forward voltage are	OCR Scan	UESI102 UES1103 BYV27-50 BYV27-100 BYV27-150 UES1101 UES1102	PDF
UES1102 Abstract: unitrode BYV27-100 BYV27-150 UES1101 UES1101-UES1103 UES1103 BYV27 BYV27-50 UES1100 Text: RECTIFIERS BYV27-50 BYV27-100 BYV27-150 FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast	OCR Scan	BYV27-50 BYV27-100 BYV27-150 UES1103 UES1101 UES1102 unitrode UES1101-UES1103 UES1103 BYV27 UES1100	PDF
USD1120 Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702 Text: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >, mmm \ . iSA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A	OCR Scan	DO-41 O-220AC O-247 USD820 1N5817 1N5818 USD1120 USD1130 USD620 USD720 USD1120 USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702	PDF
2N2222A mps Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304 Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71	OCR Scan	1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304	PDF

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Microchip Technology Inc UES1101

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UES1101 Datasheets (5)

UES1101 Datasheets Context Search

Untitled

ZENER A25

Untitled

SMD Transistors w04 sot-23

1N5806

BC548 TRANSISTOR REPLACEMENT

1N5806

MUR1560 equivalent

1n5822 trr

OZ 9983

Diode 1N4007 DO-7 Rectifier Diode

CAT7105CA

stpr16

BYV27-50

BKC Semiconductors

UES1102

BKC Semiconductors

UES1101SM

Untitled

Untitled

Untitled

UES1102

USD1120

2N2222A mps