Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TSM35N10 Search Results

    SF Impression Pixel

    TSM35N10 Price and Stock

    Taiwan Semiconductor TSM35N10CP-ROG

    MOSFET N-CHANNEL 100V 32A TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSM35N10CP-ROG Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.68775
    		Buy Now
    TSM35N10CP-ROG Digi-Reel 1
    • 1 $1.98
    • 10 $1.98
    • 100 $1.98
    • 1000 $1.98
    • 10000 $1.98
    		Buy Now
    TSM35N10CP-ROG Cut Tape 1
    • 1 $1.98
    • 10 $1.98
    • 100 $1.98
    • 1000 $1.98
    • 10000 $1.98
    		Buy Now

    Taiwan Semiconductor TSM35N10CP ROG

    Transistor: N-MOSFET; unipolar; 100V; 4A; 53.3W; DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME TSM35N10CP ROG 1
    • 1 $1.25
    • 10 $1.13
    • 100 $0.9
    • 1000 $0.85
    • 10000 $0.85
    		Get Quote
    EBV Elektronik TSM35N10CP ROG 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    TSM35N10 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM35N10CP ROG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 100V 32A TO252 Original PDF

    TSM35N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100V N-Channel Power MOSFET 500A

    Abstract: MOSFET TO-252 TSM35N10
    Text: TSM35N10 100V N-Channel Power MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS (V) RDS(on)(mΩ) ID (A) 100 37 @ VGS =10V 32 Block Diagram Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.)


    Original     		PDF TSM35N10 O-252 TSM35N10CP 100V N-Channel Power MOSFET 500A MOSFET TO-252 TSM35N10

    N-Channel

    Abstract: MOSFET TO-252
    Text: TSM35N10 100V N-Channel Power MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS (V) RDS(on)(mΩ) ID (A) 100 37 @ VGS =10V 32 Block Diagram Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.)


    Original     		PDF TSM35N10 O-252 TSM35N10CP N-Channel MOSFET TO-252