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    TP10N Search Results

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    STMicroelectronics STP10NM60N

    MOSFET N-CH 600V 10A TO220AB
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    DigiKey STP10NM60N Tube 1,658 1
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    STMicroelectronics STP10NM60N 1,765 1
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    TME STP10NM60N 1
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    STMicroelectronics STP10NK70ZFP

    MOSFET N-CH 700V 8.6A TO220FP
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    Mouser Electronics STP10NK70ZFP 883
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    STMicroelectronics STP10N95K5

    MOSFET N-CH 950V 8A TO220
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    DigiKey STP10N95K5 Tube 980 1
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    STMicroelectronics STP10NK80Z

    MOSFET N-CH 800V 9A TO220AB
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    DigiKey STP10NK80Z Tube 968 1
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    Mouser Electronics STP10NK80Z 2,878
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    Newark STP10NK80Z Bulk 1,522 1
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    STMicroelectronics STP10NK80Z 2,878 1
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    TME STP10NK80Z 158 1
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    STMicroelectronics STP10NK80ZFP

    MOSFET N-CH 800V 9A TO220FP
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    DigiKey STP10NK80ZFP Tube 967 1
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    Mouser Electronics STP10NK80ZFP 522
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    STMicroelectronics STP10NK80ZFP 522 1
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    TME STP10NK80ZFP 185 1
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    TP10N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TER22

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-222 R7 AHA 1/12/04 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency


    Original
    PDF SS-222 TER22

    tdr22

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-222 R5 AHA 6/30/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency


    Original
    PDF SS-222 tdr22

    TDR15

    Abstract: TD18N TD68N TP82N TP68N
    Text: MHL multilayer ceramic inductor features inductors • Monolithic structure provides high reliability in a wide temperature and humidity range • High quality ceramic material and unique manufacturing process provides high Q at high frequency • Standard EIA packages: 1E, 1J, 2A


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating


    Original
    PDF MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-203 R4 AHA 02/05/04 Thin Film Chip Inductors Type KL73 0402 CERTIFIED 1. Scope This specification applies to Thin Film Chip Inductors KL73 1E size produced by KOA Corporation. 2. Type Designation The type designation shall be the following form:


    Original
    PDF SS-203

    KL731H

    Abstract: TP33N KL731E
    Text: KL73 thin film inductor features Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating


    Original
    PDF MIL-STD-202, KL731H TP33N KL731E

    Untitled

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-222 R9 AHA 2/09/05 Multilayer Ceramic Inductors Type MHL CERTIFIED CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency


    Original
    PDF SS-222 Dimensions039

    Untitled

    Abstract: No abstract text available
    Text: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B


    Original
    PDF MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-222 R6 AHA 9/29/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency


    Original
    PDF SS-222

    Untitled

    Abstract: No abstract text available
    Text: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B


    Original
    PDF MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: ¿ 5 SGS-THOMSON ¡mera « 7 TP10NA40 s t p i 0NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TP10NA40 S TP10N A40FI V dss RDS on Id 400 V 400 V < 0.55 Q. < 0.55 Q. 10 A 6 A • TYPICAL RDS(on) = 0.46 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING


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    PDF STP10NA40 0NA40FI TP10NA40 TP10N A40FI STP10NA40/FI ISQWATT220

    TP10N

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP10N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP10N40E TMOS E-FET™ High Energy Power FET N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to


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    PDF MTP10N40E/D TP10N40E 21A-06 TP10N

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ TP10NB20 TP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET V TYPE S TP10N B20 TP10N B20FP • . . . . dss 200 V 200 V R D S(on) Id < 0.4 0 Q. < 0.4 0 Cl 10 A 6 A TYPICAL RDS(on) = 0.3 EXTREMELY HIGH dv/dt CAPABILITY


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    PDF STP10NB20 STP10NB20FP TP10N STP10N B20FP STP10NB20/FP O-22QFP

    MTP10N10E

    Abstract: 221A-06 AN569
    Text: MOTOROLA O rder this docum ent by M TP10N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP10N10E TMOS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T his ad van ced “E” series o f T M O S po w e r M O SFETs is desig ned


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    PDF MTP10N10E/D 21A-06 MTP10N10E 221A-06 AN569

    Untitled

    Abstract: No abstract text available
    Text: TP10NB50 TP10NB50FP N - CHANNEL 500V - 0.55Î2 - 10.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE V dss R D S on Id S TP10N B50 S TP10N B50FP 500 V 500 V < 0.6 0 Q. < 0.6 0 Q. 1 0.6 A 1 0.6 A • . . . . TYPICAL RDS(on) = 0.55 £1 EXTREMELY HIGH dv/dt CAPABILITY


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    PDF STP10NB50 STP10NB50FP O-220/TO-220FP TP10N B50FP

    P50N05

    Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
    Text: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2


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    PDF BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A TP50N06E MTP50M P50N05 P50N06 P50N05 p50n06 TP3055EL tp50n05e MTP36N06E

    IGT4E10

    Abstract: 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A
    Text: THOMSO N/ DISTRIBUTOR SflE D TCSK ^□2 b ñ7 3 □0 QS 714 Insulated-Gate Bipolar Transistors IGBTs N-Channel Enhancement-Mode Conductivity Modulated Power Field-Effect Transistors—IGBTs Optimized for Switching Applications Package M axim um Ratings BV c e s


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    PDF 0QS714 O-204AA O-218AC O-220AB 2N6975 2N6977 IGTM10N40 IGTM10N40A IGTM20N40 IGTM20N40A IGT4E10 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A

    MTP8N10

    Abstract: mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1


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    PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP8N10 mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    TP10N15L

    Abstract: 10N12L 10N15L TO-220AB Package P10N15L TP10N12L TP10N12 158SC
    Text: MOTOROLA SC IME D XSTRS/R F I fc.3 t,?a54 QG1 QD3 ci 0 1 7V 3 7 -1 / MOTOROLA • SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L MTP10IM12L M T P 10N 15L Designer's Data Sheet Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate TMOS


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    PDF 1X440 TQ-204AA 21A-04 O-220AB TP10N15L 10N12L 10N15L TO-220AB Package P10N15L TP10N12L TP10N12 158SC

    TP10N10

    Abstract: mtp10n08 10n08 mtp10n10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S T M O S P O W E R FETs 10 A M P E R E S T h e se T M O S P o w e r FETs are d e s ig n e d fo r m e d iu m v o lta g e ,


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    PDF MTP10IM08, TP10N10 mtp10n08 10n08 mtp10n10

    TP10N25

    Abstract: No abstract text available
    Text: MOTOROLA SC CXSTRS/R F bftE D • b3fc.7ES4 GO' i f l TBl 557 « M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t Tran sistor N-Channel Enhancement M ode Silicon Gate TMOS POWER FET 10 AMPERES RDS on) = 0 « OHM


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    PDF 21A-06 O-220AB) Y145M 221D-02 O-220 Y145M, 314B03 O-220) TP10N25

    floating-gate

    Abstract: DEB141
    Text: Order this document by EB141/D MOTOROLA SEMICONDUCTOR ENGINEERING BULLETIN EB141 Boost M O SFETs Drive Current in Solid State A C Relay By Kim Gauen Senior Applications Engineer, Discrete Applications Lab Because M O SF E T s are voltage controlled, they're usu­


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    PDF EB141/D EB141 2S167T floating-gate DEB141