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    Abstract: No abstract text available
    Text: TOSHIBA {D IS CRET E/ OP TO } 9097250 TOSHIBA TT <DISCRETE/OPTO De | TDT7SS0 0017477 99D 17477 D T-W-X3 TLP580, TLP58I GaAlAs Infrared Emitting Diode & NPN Silicon Photo-Transisotr The TOSHIBA TLP580 and TLP581 consists of a gallium aluminum arsenide, infrared emitting diode coupled with a silicon photo transistor in a


    OCR Scan     		PDF TLP580, TLP58I TLP580 TLP581 1200Vdc 750Vac 900Vdc DIN40045 0D1747Ã

    TLP581

    Abstract: TLP580 100KC E67349 VDE0730-2P
    Text: TLP580, TLP58I G aAlAs I n frared Emi t t i n g Diode & N P N Silicon P hoto - T r a n s i s o t r The TOSHIBA TLP580 and TLP581 consists of a gallium aluminum arsenide, infrared emitting diode coupled with a silicon photo transistor in a dual in-line package. TLP580 is no-base internal connection for highEMI environments,


    OCR Scan     		PDF TLP580, TLP58 TLP580 TLP581 1200Vdc 750Vac 900Vdc DIN40045 100KC E67349 VDE0730-2P