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Amphenol PCD GCA3106TG2214SNB PLUG CRIMP 19 CONTACTS
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DigiKey	GCA3106TG2214SNB	Bag			10	1 - 10 $131.515 100 $131.515 1000 $131.515 10000 $131.515	Buy Now
Amphenol PCD GCB3106TG2214SNB PLUG CRIMP 19 CONTACTS
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DigiKey	GCB3106TG2214SNB	Bag			10	1 - 10 $109.752 100 $109.752 1000 $109.752 10000 $109.752	Buy Now
Amphenol PCD GCA3106TG2214SNBF1 PLUG CRIMP 19 CONTACTS
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DigiKey	GCA3106TG2214SNBF1	Bag			10	1 - 10 $130.964 100 $130.964 1000 $130.964 10000 $130.964	Buy Now
Amphenol PCD GCA3106TG2214SNBC3 PLUG CRIMP 19 CONTACTS
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DigiKey	GCA3106TG2214SNBC3	Bag			10	1 - 10 $123.863 100 $123.863 1000 $123.863 10000 $123.863	Buy Now
Amphenol PCD GCB3106TG2214SNBF8 CONNECTOR, CRIMP, 19 CONTACTS
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DigiKey	GCB3106TG2214SNBF8	Bag			10	1 - 10 $159.008 100 $159.008 1000 $159.008 10000 $159.008	Buy Now

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TG2214S Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TG2214S		Toshiba			Original	PDF
TG2214S		Toshiba	GaAs linear SPDT switch		Original	PDF
TG2214SG		Toshiba			Original	PDF

TG2214S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TG2214S TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2214S RF SPDT Switch Unit: mm Antenna switch for Bluetooth class 2, 3 Diversity antenna switching Filter switching for mobile communication Local signal switching Features • Low insertion Loss: LOSS = 0.35dB typ. @1.0 GHz	Original	PDF	TG2214S
TG2214S Abstract: No abstract text available Text: TG2214S TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2214S RF SPDT Switch Unit: mm Antenna switch for Bluetooth class 2, 3 Diversity antenna switching Filter switching for mobile communication Local signal switching Features • Low insertion Loss: LOSS = 0.35dB typ. @1.0 GHz	Original	PDF	TG2214S TG2214S
antenna diversity switch Abstract: TG2214S Text: TG2214S TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2214S RF SPDT Switch Unit: mm Antenna switch for Bluetooth class 2, 3 Diversity antenna switching Filter switching for mobile communication Local signal switching Features • Low insertion Loss: LOSS = 0.35dB typ. @1.0 GHz	Original	PDF	TG2214S antenna diversity switch TG2214S
TB62501F Abstract: TB62207BFG tb62506fg TA1319AP 10 Segment Displays tb62506 tb62501 TB62207 TB62503 TA78033LS Text: General-Purpose Linear ICs Operational Amplifier ICs & Comparator ICs z 118 Intelligent Power Devices IPDs z 121 Interface Drivers z 124 Motor Drivers z 129 Power Supply ICs z 132 Small-Signal MMICs (Radio-Frequency Cell Packs) z 141 117 Operational Amplifier ICs (Op Amp ICs) & Comparator ICs	Original	PDF	TA75S01F TG2214S TG2213S 12dBm TG2216TU 25dBm 14dBm TG2217CTB TB62501F TB62207BFG tb62506fg TA1319AP 10 Segment Displays tb62506 tb62501 TB62207 TB62503 TA78033LS
TOSHIBA RF Power Module S-AV24 Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192 Text: 高周波用半導体デバイスダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	PDF	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
MIG20J503L Abstract: LNA bluetooth TC59LM818DMB TG2210FT TG2211FT TG2213S TG2214S TG2216TU mig20j503h MIG15J503L Text: 東芝半導体情報誌アイ 2002年12月号 II N N FF O O RR M M AA TT II O ON N 1 米国サンディスクと90ナノメートルNAND型フラッシュメモリ・プロセス技術を共同開発 4Gb NAND型フラッシュメモリも開発当社はNAND型フラッシュメモリの供給能力増大と競争力強化を図るため、	Original	PDF	70nm55nm TC59LM818DMB 400MHz 13mFCRAM 400m2 200m2 MIG20J503L LNA bluetooth TC59LM818DMB TG2210FT TG2211FT TG2213S TG2214S TG2216TU mig20j503h MIG15J503L
3SK73 Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112 Text: 高周波用半導体デバイスパワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	PDF	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
TB62501F Abstract: tb62501 tb6808f TA78033LS TA1319AP TB62207BFG TD62C854AF ta1319 TA7804LS TB62207 Text: General-Purpose Linear ICs Operational Amplifier ICs & Comparator ICs z 118 Intelligent Power Devices IPD z 122 Interface Drivers z 125 Motor Drivers z 130 Power Supply ICs z 134 Small-Signal MMICs (High-Frequency Cell-pack) z 142 117 Operational Amplifier ICs & Comparator ICs	Original	PDF	TA75S393F TA75S01F TA75S558F 22dBmW TG2213S 17dBmW TG2214S TG2213S. TG2216TU TB62501F tb62501 tb6808f TA78033LS TA1319AP TB62207BFG TD62C854AF ta1319 TA7804LS TB62207
BB 505 Varicap Diode Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114 Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent	Original	PDF	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
FET K161 Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	PDF	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
FET K161 Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923 Text: 高周波用半導体デバイストランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	PDF	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
2sc5088 horizontal transistors Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509 Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	PDF	3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509