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    Infrared photodiode sensor

    Abstract: PHOTO SENSOR of application OTR600 600/OTR
    Text: ta böoaaMs ooooeo? t OPTO TECHN0L06Y INC OPTO TECHNOLOGY REFLECTIVE SWITCH T Y P E O TR 6 OO/OTR 610 Features • TO-18 reflective sensor ■ .030 diameter aperture ■ Photo IC sensor Description Opto Technology's O TR 600/610 reflective se n so rs combine a G a A IA s infrared emit­


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    PDF a02E4S 600/OTR Infrared photodiode sensor PHOTO SENSOR of application OTR600

    A 708 transistor

    Abstract: OT150s OT160s
    Text: • bflOZPMS ODDGISI 1 ■ OTI MEE T> OPTO TECHN0L06Y INC M I- OPTO TECHNOLOGY P H O T O 1C S E N S O R T Y P E O T 1 5 0 /O T 1 6 0 Featu re s ■ M atched sensitivity ■ Herm etically sealed package ■ Rad hard se n so r<6 D escription M atched sensitivity to ± 1 8 per­


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    PDF TECHN0L06Y 150/OT 5QS/OT160S 562CHADDICK IL60090 A 708 transistor OT150s OT160s

    t410 TRANSISTOR

    Abstract: TO46 lens phototransistor 410D TL41 otl410s OT410D OTL410D T410S opto npn L21S
    Text: •i bfl05245 OOODIBÌ fi IOTI OPTO TECHN0L06Y INC MEE D "T -M I-W l OPTO TECHNOLOGY N P N SILICO N P H G T O T R A N S IS T O R TYPE OT 410 Features ■ TO-46 package ■ H erm etically sealed device ■ High sensitivity Description The 0T41C sensors co nsist of


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    PDF DSS45 000D13CJ 0T41D OTL410D TL41QS 0T41QD t410 TRANSISTOR TO46 lens phototransistor 410D TL41 otl410s OT410D T410S opto npn L21S

    APT40M80AFN

    Abstract: APT35M80AFN
    Text: ADVANCED POWER TECHN0L06Y 4^E □ BST'lD'l 0 0 0 0 5 0 4 D Op{2 tTB « A V P A dvanced > P : O W E R - i ~ - 3 ° ) - 1s Techno lo g y APT40M80AFN 400V58.0A 0.08f APT35M80AFN 350V 58.0A 0.08^ Ô S 2 ) POWER MOS IV N - CHANNEL ÈNHANCEMENT MODE HIGH VOLTAGE POWER MOSFE


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    PDF TECHN0L06Y APT40M80AFN APT35M80AFN MIL-STD-750

    APT40GF100BN

    Abstract: No abstract text available
    Text: ADVANCE» POI il ER TECHNOLOGY b lE T> • □SS T'lÜ T QOOÜfl'lO b3T * A V P A d v a n ced P o w er Te c h n o l o g y 0 APT40GF100BN 1000V 40A POWER MQS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS


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    PDF APT40GF100BN APT40GF100BN

    T76B

    Abstract: microchannel ibm technical microchannel 5 pin reset ic ARB IBM T61
    Text: P L X TECHNOLOCY CORP 52E ]> • bflSSlMT 00GD453 53T «PLX MC 9010 Micro Channel Bus Master Interface Chip for _National DP83932 Ethernet Controller T■C H N O Ï p î r T April 1992 ~TzSô> Features_ General Description_


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    PDF 00GD453 DP83932 128-pin T76B microchannel ibm technical microchannel 5 pin reset ic ARB IBM T61

    16c71

    Abstract: No abstract text available
    Text: MICROCHIP TECHNOLOGY INC blE & T> m blG32Ql 00Q5571 277 • H C H P P IC M icrochip 1 6 C 71 8-Bit CMOS EPROM Microcontroller with A/D Converter CMOS technology FEATURES High Perform ance RISC-like CPU • Only 35 single word instructions to learn • All single cycle instructions 200 ns except for


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    PDF blG32Ql 00Q5571 14-bit DS30150B 16c71

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC 3ÖE D blllSHI G0G2S72 2 IMRN T -H & -2 Z -3 7 128Kx8 DRAM WITH 256 X 8 SAM VRAM • • • • • • • • • • • Industry standard pinout, tim ing and functions H igh perform ance CMOS silicon gate process Single +5V ±10% pow er supply


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    PDF G0G2S72 128Kx8 512-cycle 275mW 100ns 40-Pin GQ02bQ4

    4118 sram

    Abstract: T1A12
    Text: M I CR ON T E C H N O L O G Y INC IMRN b l l l S H T 000204=1 fi 3ÔE » T - jl / J 5 7 _ n 8K X 8 SRAM SRAM FEATURES PIN ASSIGNMENT Top View OPTIONS • Timing 12ns access 15ns access 20ns access 25ns access 30ns access 35ns access • Packages Plastic DIP (300 mil)


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    PDF 28L/300 TECHN0L06Y P00S8SS 4118 sram T1A12

    74aLS808

    Abstract: 74ALS677 74ALS468 SN74AS877 SN74LS630 SM54A NCE 7190 74ls631 SN74LS693 TTL Data Book for Design Engineers
    Text: ADVANCED LOW-POWER SCHOTTKY AND ADVANCED SCHOTTKY CIRCUITS FUNCTION DEVICE AS1032 ALS1034 AS1034 Quad 2-Input OR Buffers/ Drivers A VAILABILITY NOW NOW NOW Hex Drivers NOW ALS1035 Hex Buffers with D-C Outputs NOW AS1036 Quad 2-Input NOR Line Driver NOW ALS1240


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    PDF ALS1032 AS1032 ALS1034 AS1034 ALS1035 AS1036 ALS1240 ALS1241 ALS1242 ALS1243 74aLS808 74ALS677 74ALS468 SN74AS877 SN74LS630 SM54A NCE 7190 74ls631 SN74LS693 TTL Data Book for Design Engineers

    MT4C1024

    Abstract: No abstract text available
    Text: MICRO N T E C H N O L O G Y INC SSE D • 1=11154^ G D D 4 1 7 4 17T « M R N MT4C1024 L 1 MEG X 1 DRAM |VtlC=RON DRAM 1 MEG X 1 DRAM FEATURES PIN ASSIGNMENT Top View • Industry standard x l pinout, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process


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    PDF MT4C1024 150mW 512-cycle 18-Pin T4C1024I

    CRT 2380

    Abstract: APT4020AN
    Text: ADVANCED P OWE R TECHNOLOGY M=1E D 0 5 5 7 ^ A dvanced POWER T-31-15 Techno lo g y O D s f OQOGMMfl 771 H A V P l j l APT4020AN APT3520AN APT4025AN APT3525AN Ô S POWER MOS IV 400V 350V 400V 350V 22.5A 22.5A 20.0A 20.0A 0.20 0.20 0.25 0.25 Cl Í2 Cl Cl


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    PDF T-31-15 APT4020AN APT3520AN APT4025AN APT3525AN CRT 2380 APT4020AN

    MT4C4001d

    Abstract: MT4C4001DJ dram 72-pin simm micron 32
    Text: ÛOQSMbS 1 MÊtlRN ADVANCE .in,-;."M~1'.lu1.il".,1,.J.rM*1. ^ J W 1 T -M -zz-n 2 MEG X 36 DRAM DRAM MODULE FAST PAGE MODE PIN ASSIGNMENT Top View • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance CMOS silicon gate process.


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    PDF 72-pin 500mW 024-cycle MT18D236M/G D236Z 100ns 0002M73 MT4C4001d MT4C4001DJ dram 72-pin simm micron 32

    LT 5251

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE T> bill5MT 000371? Toe M IC R O N 16K LATCHED SRAM X II1RN M T5C 2 516 16 LA TCH ED SRAM 16K x 16 S R A M WITH ADDRESS/ DATA INPUT LATCHES FEATURES Fast access times: 12,15,20 and 25ns Fast OE: 5,6,8 and 10ns Single +5V ±10% power supply


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    PDF 52-Pln 52-pin QQG372Ô LT 5251