Infrared photodiode sensor
Abstract: PHOTO SENSOR of application OTR600 600/OTR
Text: ta böoaaMs ooooeo? t OPTO TECHN0L06Y INC OPTO TECHNOLOGY REFLECTIVE SWITCH T Y P E O TR 6 OO/OTR 610 Features • TO-18 reflective sensor ■ .030 diameter aperture ■ Photo IC sensor Description Opto Technology's O TR 600/610 reflective se n so rs combine a G a A IA s infrared emit
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a02E4S
600/OTR
Infrared photodiode sensor
PHOTO SENSOR of application
OTR600
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A 708 transistor
Abstract: OT150s OT160s
Text: • bflOZPMS ODDGISI 1 ■ OTI MEE T> OPTO TECHN0L06Y INC M I- OPTO TECHNOLOGY P H O T O 1C S E N S O R T Y P E O T 1 5 0 /O T 1 6 0 Featu re s ■ M atched sensitivity ■ Herm etically sealed package ■ Rad hard se n so r<6 D escription M atched sensitivity to ± 1 8 per
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TECHN0L06Y
150/OT
5QS/OT160S
562CHADDICK
IL60090
A 708 transistor
OT150s
OT160s
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t410 TRANSISTOR
Abstract: TO46 lens phototransistor 410D TL41 otl410s OT410D OTL410D T410S opto npn L21S
Text: •i bfl05245 OOODIBÌ fi IOTI OPTO TECHN0L06Y INC MEE D "T -M I-W l OPTO TECHNOLOGY N P N SILICO N P H G T O T R A N S IS T O R TYPE OT 410 Features ■ TO-46 package ■ H erm etically sealed device ■ High sensitivity Description The 0T41C sensors co nsist of
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DSS45
000D13CJ
0T41D
OTL410D
TL41QS
0T41QD
t410 TRANSISTOR
TO46 lens phototransistor
410D
TL41
otl410s
OT410D
T410S
opto npn
L21S
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APT40M80AFN
Abstract: APT35M80AFN
Text: ADVANCED POWER TECHN0L06Y 4^E □ BST'lD'l 0 0 0 0 5 0 4 D Op{2 tTB « A V P A dvanced > P : O W E R - i ~ - 3 ° ) - 1s Techno lo g y APT40M80AFN 400V58.0A 0.08f APT35M80AFN 350V 58.0A 0.08^ Ô S 2 ) POWER MOS IV N - CHANNEL ÈNHANCEMENT MODE HIGH VOLTAGE POWER MOSFE
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TECHN0L06Y
APT40M80AFN
APT35M80AFN
MIL-STD-750
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APT40GF100BN
Abstract: No abstract text available
Text: ADVANCE» POI il ER TECHNOLOGY b lE T> • □SS T'lÜ T QOOÜfl'lO b3T * A V P A d v a n ced P o w er Te c h n o l o g y 0 APT40GF100BN 1000V 40A POWER MQS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS
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APT40GF100BN
APT40GF100BN
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T76B
Abstract: microchannel ibm technical microchannel 5 pin reset ic ARB IBM T61
Text: P L X TECHNOLOCY CORP 52E ]> • bflSSlMT 00GD453 53T «PLX MC 9010 Micro Channel Bus Master Interface Chip for _National DP83932 Ethernet Controller T■C H N O Ï p î r T April 1992 ~TzSô> Features_ General Description_
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00GD453
DP83932
128-pin
T76B
microchannel
ibm technical microchannel
5 pin reset ic ARB
IBM T61
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16c71
Abstract: No abstract text available
Text: MICROCHIP TECHNOLOGY INC blE & T> m blG32Ql 00Q5571 277 • H C H P P IC M icrochip 1 6 C 71 8-Bit CMOS EPROM Microcontroller with A/D Converter CMOS technology FEATURES High Perform ance RISC-like CPU • Only 35 single word instructions to learn • All single cycle instructions 200 ns except for
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blG32Ql
00Q5571
14-bit
DS30150B
16c71
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 3ÖE D blllSHI G0G2S72 2 IMRN T -H & -2 Z -3 7 128Kx8 DRAM WITH 256 X 8 SAM VRAM • • • • • • • • • • • Industry standard pinout, tim ing and functions H igh perform ance CMOS silicon gate process Single +5V ±10% pow er supply
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G0G2S72
128Kx8
512-cycle
275mW
100ns
40-Pin
GQ02bQ4
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4118 sram
Abstract: T1A12
Text: M I CR ON T E C H N O L O G Y INC IMRN b l l l S H T 000204=1 fi 3ÔE » T - jl / J 5 7 _ n 8K X 8 SRAM SRAM FEATURES PIN ASSIGNMENT Top View OPTIONS • Timing 12ns access 15ns access 20ns access 25ns access 30ns access 35ns access • Packages Plastic DIP (300 mil)
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28L/300
TECHN0L06Y
P00S8SS
4118 sram
T1A12
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74aLS808
Abstract: 74ALS677 74ALS468 SN74AS877 SN74LS630 SM54A NCE 7190 74ls631 SN74LS693 TTL Data Book for Design Engineers
Text: ADVANCED LOW-POWER SCHOTTKY AND ADVANCED SCHOTTKY CIRCUITS FUNCTION DEVICE AS1032 ALS1034 AS1034 Quad 2-Input OR Buffers/ Drivers A VAILABILITY NOW NOW NOW Hex Drivers NOW ALS1035 Hex Buffers with D-C Outputs NOW AS1036 Quad 2-Input NOR Line Driver NOW ALS1240
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ALS1032
AS1032
ALS1034
AS1034
ALS1035
AS1036
ALS1240
ALS1241
ALS1242
ALS1243
74aLS808
74ALS677
74ALS468
SN74AS877
SN74LS630
SM54A
NCE 7190
74ls631
SN74LS693
TTL Data Book for Design Engineers
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MT4C1024
Abstract: No abstract text available
Text: MICRO N T E C H N O L O G Y INC SSE D • 1=11154^ G D D 4 1 7 4 17T « M R N MT4C1024 L 1 MEG X 1 DRAM |VtlC=RON DRAM 1 MEG X 1 DRAM FEATURES PIN ASSIGNMENT Top View • Industry standard x l pinout, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process
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MT4C1024
150mW
512-cycle
18-Pin
T4C1024I
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CRT 2380
Abstract: APT4020AN
Text: ADVANCED P OWE R TECHNOLOGY M=1E D 0 5 5 7 ^ A dvanced POWER T-31-15 Techno lo g y O D s f OQOGMMfl 771 H A V P l j l APT4020AN APT3520AN APT4025AN APT3525AN Ô S POWER MOS IV 400V 350V 400V 350V 22.5A 22.5A 20.0A 20.0A 0.20 0.20 0.25 0.25 Cl Í2 Cl Cl
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T-31-15
APT4020AN
APT3520AN
APT4025AN
APT3525AN
CRT 2380
APT4020AN
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MT4C4001d
Abstract: MT4C4001DJ dram 72-pin simm micron 32
Text: ÛOQSMbS 1 MÊtlRN ADVANCE .in,-;."M~1'.lu1.il".,1,.J.rM*1. ^ J W 1 T -M -zz-n 2 MEG X 36 DRAM DRAM MODULE FAST PAGE MODE PIN ASSIGNMENT Top View • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance CMOS silicon gate process.
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72-pin
500mW
024-cycle
MT18D236M/G
D236Z
100ns
0002M73
MT4C4001d
MT4C4001DJ
dram 72-pin simm micron 32
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LT 5251
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC SSE T> bill5MT 000371? Toe M IC R O N 16K LATCHED SRAM X II1RN M T5C 2 516 16 LA TCH ED SRAM 16K x 16 S R A M WITH ADDRESS/ DATA INPUT LATCHES FEATURES Fast access times: 12,15,20 and 25ns Fast OE: 5,6,8 and 10ns Single +5V ±10% power supply
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52-Pln
52-pin
QQG372Ô
LT 5251
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