Untitled
Abstract: No abstract text available
Text: Laird Technologies Web site: www.LairdTech.com All Categories > EMI Solutions > Ferrite Products > Ferrite Toroids > T0375 to T1417 9.53 mm to 36.00 mm / 0.375 inch to 1.417 inch Ferrite Toroids > Mobile Accessories > Item # MOGSK Item # MOGSK, Mobile Accessories
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T0375
T1417
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Untitled
Abstract: No abstract text available
Text: Laird Technologies Web site: www.LairdTech.com All Categories > EMI Solutions > Ferrite Products > Ferrite Toroids > T0375 to T1417 9.53 mm to 36.00 mm / 0.375 inch to 1.417 inch Ferrite Toroids > Mobile Accessories > Item # MORNG Item # MORNG, Mobile Accessories
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T0375
T1417
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T-14178
Abstract: 14178
Text: T1/CEPT/ISDN PRI Interface Transformer Electrical Specifications @ 250C Turns Ratio + 3% 1CT : 2.42CT (T1) & 1CT : 2.42CT (T2) PARAMETER MIN. OCL (Primary) 1.20 MAX. UNITS mH Leakage Inductance 0.6 µH Capacitance (CW/W) 25 pF Primary DC Resistance 0.7
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UL94-VO
T-14178
T-14178
14178
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Untitled
Abstract: No abstract text available
Text: T1/CEPT/ISDN PRI Interface Transformer Electrical Specifications @ 250C Turns Ratio + 3% 1CT : 2.42CT (T1) & 1CT : 2.42CT (T2) PARAMETER MIN. OCL (Primary) 1.20 MAX. Flammability: Materials used in the production of these units meet requirements of UL94-VO
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UL94-VO
T-14178
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14177
Abstract: T-14177
Text: T1/CEPT/ISDN PRI Interface Transformer Electrical Specifications @ 250C Turns Ratio + 3% 1CT:1.15CT (T1) & 1CT:1.15CT (T2) PARAMETER MIN. OCL (Primary) 1.5 MAX. UNITS mH Leakage Inductance 0.8 µH Capacitance (CW/W) 45 pF Primary DC Resistance 1.0 Ohms
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UL94-VO
T-14177
14177
T-14177
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Untitled
Abstract: No abstract text available
Text: T1/CEPT/ISDN PRI Interface Transformer Flammability: Materials used in the production of these units meet requirements of UL94-VO and IEC 695-2-2 needle flame test. Electrical Specifications @ 250C Turns Ratio + 3% 1:1.14CT (T1) & 1:2CT (T2) PARAMETER
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UL94-VO
-400C
T-14179
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14170
Abstract: T-14170 PAIRGAIN
Text: T1/CEPT/ISDN PRI Interface Transformer Electrical Specifications @ 250C * Turns Ratio + 3% 1:1:1.27 & 1CT:2CT PARAMETER MIN. OCL (Primary) 1.5 & 2.0 UNITS mH Leakage Inductance 0.6 & 0.8 µH Capacitance (CW/W) 50 & 45 pF Primary DC Resistance 0.9 & 1.0
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UL94-VO
T-14170
14170
T-14170
PAIRGAIN
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4832
Abstract: steward catalog 503 911 35T0155-10P steward 248-6 LS 2027 MLT 22 721 permeability 38T0155-10P T0155-00P
Text: STEWARD TOROIDS Table Of Contents Steward & Quality Assurance. 3 Quality Philosophy. 3
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Untitled
Abstract: No abstract text available
Text: T1/CEPT/ISDN PRI Interface Transformer Electrical Specifications @ 250C Turns Ratio + 3% 1CT:1CT & 1CT:2.3CT PARAMETER MIN. OCL (Primary) 1.5 MAX. UNITS mH Leakage Inductance 0.6 µH Capacitance (CW/W) 45 pF Primary DC Resistance 1.0 Ohms Secondary DC Resistance
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UL94-VO
T-14174
PAIRUL94-VO
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14173
Abstract: T-14173
Text: T1/CEPT/ISDN PRI Interface Transformer Electrical Specifications @ 250C Turns Ratio + 3% 1CT:1CT & 1CT:1CT PARAMETER MIN. OCL (Primary) 1.5 MAX. UNITS mH Leakage Inductance 0.4 µH Capacitance (CW/W) 30 pF Primary DC Resistance 0.7 Ohms Secondary DC Resistance
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UL94-VO
T-14173
14173
T-14173
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1417
Abstract: T-1417 28kHz
Text: Transformer Turns Ratio 1 : 1 +1% Parameter Min. Inductance 1-5 1 Typ. Max. 1.6 Units mH 11 µH DC Resistance 1-4 1.26 Ω DC Resistance (2-5) 1.25 Ω 60 mA Insertion Loss @28kHz 0.50 dB Frequency Response @10kHz-300kHz, 28kHz Ref. +0.5 dB Leakage Inductance
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28kHz
10kHz-300kHz,
28kHz
UL1950
130oC
100kHz
T-1417
1417
T-1417
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14176
Abstract: T-14176 schematic diagram transformer
Text: T1/CEPT/ISDN PRI Interface Transformer Electrical Specifications @ 250C Turns Ratio + 5% 1:2CT (T1) & 1:1.36 (T2) PARAMETER MIN. OCL (Primary) 1.2 MAX. UNITS mH Leakage Inductance 0.8 µH Capacitance (CW/W) 50 pF Primary DC Resistance 0.8 Ohms Secondary DC Resistance
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UL94-VO
T-14176
14176
T-14176
schematic diagram transformer
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14175
Abstract: T-14175
Text: T1/CEPT/ISDN PRI Interface Transformer Electrical Specifications @ 250C Turns Ratio + 3% 1:2CT (T1) & 1:1.36CT (T2) PARAMETER MIN. OCL (Primary) 1.2 MAX. UNITS mH Leakage Inductance 0.4 µH Capacitance (CW/W) 30 pF Primary DC Resistance 0.7 Ohms Secondary DC Resistance
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UL94-VO
T-14175
14175
T-14175
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14172
Abstract: T-14172 turns ratio of 15 w transformer PAIRGAIN
Text: T1/CEPT/ISDN PRI Interface Transformer Electrical Specifications @ 250C Turns Ratio + 3% 1CT:2CT (T1) & 1CT:1CT (T2) PARAMETER MIN. OCL (Primary) 1.5 MAX. UNITS mH Leakage Inductance 0.6 µH Capacitance (CW/W) 45 pF Primary DC Resistance 1.0 Ohms Secondary DC Resistance
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UL94-VO
T-14172
14172
T-14172
turns ratio of 15 w transformer
PAIRGAIN
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x2864
Abstract: TI25A X28C256BP-15 X28C256B X28C256BP15 xicor 2206 32768X8 T14174 X28C256B-15 X2864A
Text: E4E D XI CO R INC • ^41743 0002510 1 ■ « P R E LIM IN A R Y IN F O R M A T IO N 256K Commercial Industrial X28C256B X28C256BI 32K x 8 Bit Electrically Erasable PROM FEATURES • 150 ns Access Time • LOW Power CMOS — 60 mA Active Current Max. — 200 ju.A Standby Current Max.
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X28C256B
X28C256BI
64-Byte
X2864A
X28C256B,
X28C256BI
32-PAD
x2864
TI25A
X28C256BP-15
X28C256BP15
xicor 2206
32768X8
T14174
X28C256B-15
X2864A
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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Untitled
Abstract: No abstract text available
Text: XICOR INC 52E D ^41743 O O O B M b S Q0Ô IXIC Preliminary Information 16K X 24164 Serial E2PROM FEATURES • 2.7V to 5.5V Power Supply • Low Power CMOS — Active Read Current Less Than 1 mA — Active Write Current Less Than 3mA — Standby Current Less Than 50 |iA
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X24C16
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Untitled
Abstract: No abstract text available
Text: A p p l ic a t io n N o t e s A V A I L A B L E i AN62 • AN64 • AN66 • AN74 m X68C75 SLIC E2 Microperipheral Port Expander and E2 Memory FEATURES • High Performance CMOS —Fast Access Time, 120ns —Low Power • 60mA Active • 100 iA Standby • PDIP, PLCC, and TQFP Packaging Available
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X68C75
120ns
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Untitled
Abstract: No abstract text available
Text: XlHE Preliminary Information XM28HC010 1 Megabit Module 128K X 8 Bit 5 Volt, Byte Alterable High Speed E2PROM TYPICAL FEATURES * High Speed 1 Megabit 128K x 8 E2PROM Module * Access Time of 70 ns at -55°C to +125°C * SIMPLE Byte and Page Write —Single 5 Volt Supply
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XM28HC010
X28VC256
32-Pin
X28C010
128-byte
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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Sylvan58MC
09A001-00
66X0003-001
50746A
68X0003
68X0003-001
T-E0137
93B3-3
93B3-4
st178
diode E1110
CK705
ecg semiconductor replacement guide
CS1237
ME1120
TE1088
1N942
1N733A
Delco DTG-110B transistor
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