SIHB30N60E Search Results

SIHB30N60E Price and Stock

Filter by Manufacturer


Vishay Siliconix SIHB30N60ET1-GE3 N-CHANNEL 600V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHB30N60ET1-GE3	Cut Tape	1,142		1	1 $6.73 10 $4.534 100 $6.73 1000 $6.73 10000 $6.73	Buy Now
	SIHB30N60ET1-GE3	Digi-Reel	1,142		1	1 $6.73 10 $4.534 100 $6.73 1000 $6.73 10000 $6.73	Buy Now
	SIHB30N60ET1-GE3	Reel			800	1 - 10 - 100 - 1000 $2.725 10000 $2.725	Buy Now
Vishay Siliconix SIHB30N60ET5-GE3 N-CHANNEL 600V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHB30N60ET5-GE3	Reel	800		800	1 - 10 - 100 - 1000 $2.725 10000 $2.725	Buy Now
	SIHB30N60ET5-GE3	Cut Tape			1	1 $6.73 10 $6.73 100 $6.73 1000 $6.73 10000 $6.73	Buy Now
	SIHB30N60ET5-GE3	Digi-Reel			1	1 $6.73 10 $6.73 100 $6.73 1000 $6.73 10000 $6.73	Buy Now
Vishay Siliconix SIHB30N60E-GE3 MOSFET N-CH 600V 29A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHB30N60E-GE3	Tube	798		1	1 $6.73 10 $6.73 100 $6.73 1000 $2.725 10000 $2.725	Buy Now
Vishay Siliconix SIHB30N60E-E3 MOSFET N-CH 600V 29A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHB30N60E-E3	Reel			1,000	1 - 10 - 100 - 1000 $2.725 10000 $2.725	Buy Now
Vishay Intertechnologies SIHB30N60E-E3 N-CHANNEL 600V - Tape and Reel (Alt: SIHB30N60E-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHB30N60E-E3	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more SIHB30N60E price and stock on Findchips.com

SIHB30N60E Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHB30N60E-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 29A D2PAK		Original	PDF
SIHB30N60E-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 29A D2PAK		Original	PDF

SIHB30N60E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SiHB30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	PDF	SiHB30N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiHB30N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	SiHB30N60E AN609, 5779m 3451m 9055m 7699u 10-Feb-15
Untitled Abstract: No abstract text available Text: SiHB30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	PDF	SiHB30N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiHB30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	PDF	SiHB30N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHB30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)	Original	PDF	SiHB30N60E 2002/95/EC O-263) 11-Mar-11
Untitled Abstract: No abstract text available Text: SiHB30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)	Original	PDF	SiHB30N60E 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiHB30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • • 650 VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Generation Two	Original	PDF	SiHB30N60E 2002/95/EC O-263) 11-Mar-11
Untitled Abstract: No abstract text available Text: SiHB30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D D2PAK APPLICATIONS	Original	PDF	SiHB30N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
TO-247 FULLPAK Package Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction	Original	PDF	enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836