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    SIB412DK Price and Stock

    Vishay Siliconix SIB412DK-T1-E3

    MOSFET N-CH 20V 9A PPAK SC75-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIB412DK-T1-E3 Cut Tape 1
    • 1 $1.09
    • 10 $1.09
    • 100 $1.09
    • 1000 $1.09
    • 10000 $1.09
    		Buy Now
    SIB412DK-T1-E3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.27026
    		Buy Now
    SIB412DK-T1-E3 Digi-Reel 1
    • 1 $1.09
    • 10 $1.09
    • 100 $1.09
    • 1000 $1.09
    • 10000 $1.09
    		Buy Now

    Vishay Siliconix SIB412DK-T1-GE3

    MOSFET N-CH 20V 9A PPAK SC75-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIB412DK-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.33212
    		Buy Now

    SIB412DK Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIB412DK-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 9A SC75-6 Original PDF
    SIB412DK-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 9A SC75-6 Original PDF

    SIB412DK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A2023

    Abstract: 70953 SiB412DK
    Text: SPICE Device Model SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SiB412DK S-70953Rev. 14-May-07 A2023 70953

    SC-75

    Abstract: SiB412DK SiB412DK-T1-GE3 529B
    Text: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB412DK SC-75 SC-75-6L-Single SiB412DK-T1-GE3 11-Mar-11 529B

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB412DK SC-75 SC-75-6L-Single SiB412DK-T1-GE3 11-Mar-11

    70953

    Abstract: SiB412DK
    Text: SPICE Device Model SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SiB412DK 18-Jul-08 70953

    SiB412DK

    Abstract: SC75 SiB412DK-T1-E3
    Text: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V 9a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB412DK SC-75-6L-Single SiB412DK-T1-E3 08-Apr-05 SC75

    marking code vishay SILICONIX

    Abstract: marking AAX
    Text: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB412DK SC-75 SC-75-6L-Single SiB412DK-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code vishay SILICONIX marking AAX

    4046 datasheet

    Abstract: AN609 SiB412DK
    Text: SiB412DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SiB412DK AN609 19-Dec-07 4046 datasheet

    SC-75

    Abstract: SiB412DK SiB412DK-T1-GE3
    Text: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB412DK SC-75 SC-75-6L-Single SiB412DK-T1-GE3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB412DK SC-75 SC-75-6L-Single 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    marking AAX

    Abstract: No abstract text available
    Text: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB412DK SC-75 SC-75-6L-Single SiB412DK-T1-E3 08-Apr-05 marking AAX

    SC-75

    Abstract: SiB412DK SiB412DK-T1-GE3 529b
    Text: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB412DK SC-75 SC-75-6L-Single SiB412DK-T1-GE3 18-Jul-08 529b

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3