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    SIA447DJ Price and Stock

    Vishay Siliconix SIA447DJ-T1-GE3

    MOSFET P-CH 12V 12A PPAK SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA447DJ-T1-GE3 Digi-Reel 64,898 1
    • 1 $0.74
    • 10 $0.459
    • 100 $0.74
    • 1000 $0.2021
    • 10000 $0.2021
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    SIA447DJ-T1-GE3 Cut Tape 64,898 1
    • 1 $0.74
    • 10 $0.459
    • 100 $0.74
    • 1000 $0.2021
    • 10000 $0.2021
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    SIA447DJ-T1-GE3 Reel 63,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.1732
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    Vishay Intertechnologies SIA447DJ-T1-GE3

    P-CHANNEL 12-V (D-S) MOSFET - Tape and Reel (Alt: SIA447DJ-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIA447DJ-T1-GE3 Reel 30,000 8 Weeks 3,000
    • 1 -
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    • 10000 $0.12952
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    SIA447DJ-T1-GE3 Ammo Pack 7 Weeks, 3 Days 1
    • 1 $0.527
    • 10 $0.527
    • 100 $0.253
    • 1000 $0.147
    • 10000 $0.147
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    SIA447DJ-T1-GE3 Bulk 18 Weeks, 3 Days 1
    • 1 $0.57
    • 10 $0.57
    • 100 $0.274
    • 1000 $0.159
    • 10000 $0.159
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    Mouser Electronics SIA447DJ-T1-GE3 36,455
    • 1 $0.38
    • 10 $0.297
    • 100 $0.219
    • 1000 $0.173
    • 10000 $0.135
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    Verical SIA447DJ-T1-GE3 5,539 256
    • 1 -
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    • 1000 $0.1221
    • 10000 $0.1221
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    SIA447DJ-T1-GE3 3,268 38
    • 1 -
    • 10 -
    • 100 $0.1697
    • 1000 $0.1697
    • 10000 $0.1341
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    SIA447DJ-T1-GE3 2,344 42
    • 1 -
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    • 100 $0.1485
    • 1000 $0.1413
    • 10000 $0.1413
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    SIA447DJ-T1-GE3 1,835 468
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.1564
    • 10000 $0.1564
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    Arrow Electronics SIA447DJ-T1-GE3 3,290 8 Weeks 1
    • 1 $0.1704
    • 10 $0.1704
    • 100 $0.1704
    • 1000 $0.1704
    • 10000 $0.1347
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    SIA447DJ-T1-GE3 Cut Strips 2,344 8 Weeks 1
    • 1 $0.1557
    • 10 $0.1533
    • 100 $0.1485
    • 1000 $0.1413
    • 10000 $0.1413
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    Newark SIA447DJ-T1-GE3 Cut Tape 3,000 1
    • 1 $0.117
    • 10 $0.117
    • 100 $0.117
    • 1000 $0.117
    • 10000 $0.117
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    SIA447DJ-T1-GE3 Bulk 1,835 1
    • 1 $0.107
    • 10 $0.107
    • 100 $0.107
    • 1000 $0.107
    • 10000 $0.107
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    SIA447DJ-T1-GE3 Reel 1
    • 1 $0.154
    • 10 $0.154
    • 100 $0.154
    • 1000 $0.154
    • 10000 $0.146
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    SIA447DJ-T1-GE3 Reel 3,000
    • 1 $0.132
    • 10 $0.132
    • 100 $0.132
    • 1000 $0.132
    • 10000 $0.132
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    TTI SIA447DJ-T1-GE3 Reel 45,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.137
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    TME SIA447DJ-T1-GE3 1
    • 1 $0.378
    • 10 $0.33
    • 100 $0.22
    • 1000 $0.192
    • 10000 $0.18
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    Chip1Stop SIA447DJ-T1-GE3 Cut Tape 5,889
    • 1 -
    • 10 $0.163
    • 100 $0.134
    • 1000 $0.12
    • 10000 $0.117
    		Buy Now
    EBV Elektronik SIA447DJ-T1-GE3 9 Weeks 3,000
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    Vishay Huntington SIA447DJ-T1-GE3

    MOSFET P-CH 12V 12A SC-70-6L
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIA447DJ-T1-GE3 1,386
    • 1 -
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    • 1000 $0.2218
    • 10000 $0.2047
    		Buy Now

    SIA447DJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA447DJ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 12A SC-70-6L Original PDF

    SIA447DJ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SiA447DJ

    Abstract: No abstract text available
    Text: SPICE Device Model SiA447DJ www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the P-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiA447DJ 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA447DJ Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0135 at VGS = - 4.5 V - 12a 0.0194 at VGS = - 2.5 V - 12a 0.0344 at VGS = - 1.8 V - 12a 0.0710 at VGS = - 1.5 V -3 Qg (Typ.)


    Original     		SiA447DJ SC-70-6L-Single SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    sia447dj

    Abstract: No abstract text available
    Text: New Product SiA447DJ Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0135 at VGS = - 4.5 V - 12a 0.0194 at VGS = - 2.5 V - 12a 0.0344 at VGS = - 1.8 V - 12a 0.0710 at VGS = - 1.5 V -3 Qg (Typ.)


    Original     		SiA447DJ SC-70 SC-70-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA447DJ www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the P-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiA447DJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N PDF

    Untitled

    Abstract: No abstract text available
    Text: LT8584 2.5A Monolithic Active Cell Balancer with Telemetry Interface Description Features 2.5A Typical Average Cell Discharge Current n Integrated 6A, 50V Power Switch n Integrates Seamlessly with LTC680x Family: No Additional Software Required n Selectable Current and Temperature Monitors


    Original     		LT8584 LTC680x 16-Lead LTC6802, LTC6803, LTC6804 TA03a LTC3300-1 48-Lead LTC6803 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		SC-70 SiA519EDJ com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1402 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402 PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406 PDF

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ PDF

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    SI7615A

    Abstract: LTC6802-1
    Text: LT8584 2.5A Monolithic Active Cell Balancer with Telemetry Interface Description Features 2.5A Typical Average Cell Discharge Current n Integrated 6A, 50V Power Switch n Integrates Seamlessly with LTC680x Family: No Additional Software Required n Selectable Current and Temperature Monitors


    Original     		LT8584 LTC680x 16-Lead C3300-1 48-Lead LTC6802-1 SSOP-44 LTC6803-1/ LTC6803-3 SI7615A LTC6802-1 PDF

    balancer battery

    Abstract: No abstract text available
    Text: LT8584 2.5A Monolithic Active Cell Balancer with Telemetry Interface Description Features 2.5A Typical Average Cell Discharge Current n Integrated 6A, 50V Power Switch n Integrates Seamlessly with LTC680x Family: No Additional Software Required n Selectable Current and Temperature Monitors


    Original     		LT8584 LTC680x 16-Lead LTC6802, LTC6803, LTC6804 TA03a LTC3300-1 48-Lead LTC6803 balancer battery PDF