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    SIA429DJT Search Results

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    SIA429DJT Price and Stock

    Vishay Siliconix SIA429DJT-T1-GE3

    MOSFET P-CH 20V 12A PPAK SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA429DJT-T1-GE3 Digi-Reel 25,905 1
    • 1 $0.88
    • 10 $0.55
    • 100 $0.88
    • 1000 $0.24674
    • 10000 $0.24674
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    SIA429DJT-T1-GE3 Reel 25,905 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.21265
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    SIA429DJT-T1-GE3 Cut Tape 25,905 1
    • 1 $0.88
    • 10 $0.55
    • 100 $0.88
    • 1000 $0.24674
    • 10000 $0.24674
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    RS SIA429DJT-T1-GE3 Bulk 20
    • 1 -
    • 10 -
    • 100 $0.38
    • 1000 $0.342
    • 10000 $0.323
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    Vishay Intertechnologies SIA429DJT-T1-GE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIA429DJT-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIA429DJT-T1-GE3 Reel 18 Weeks 3,000
    • 1 -
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    • 10000 $0.16605
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    Mouser Electronics SIA429DJT-T1-GE3 18,560
    • 1 $0.68
    • 10 $0.467
    • 100 $0.32
    • 1000 $0.23
    • 10000 $0.172
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    Verical SIA429DJT-T1-GE3 3,000 3,000
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    • 10000 $0.1964
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    SIA429DJT-T1-GE3 3,000 3,000
    • 1 -
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    • 10000 $0.2437
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    SIA429DJT-T1-GE3 3,000 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.1716
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    Arrow Electronics SIA429DJT-T1-GE3 3,000 18 Weeks 3,000
    • 1 -
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    • 10000 $0.1947
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    SIA429DJT-T1-GE3 3,000 18 Weeks 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.2437
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    SIA429DJT-T1-GE3 3,000 18 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.1716
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    Newark SIA429DJT-T1-GE3 Cut Tape 4,234 1
    • 1 $0.642
    • 10 $0.506
    • 100 $0.397
    • 1000 $0.397
    • 10000 $0.397
    		Buy Now
    SIA429DJT-T1-GE3 Reel 3,000
    • 1 $0.238
    • 10 $0.238
    • 100 $0.238
    • 1000 $0.238
    • 10000 $0.215
    		Buy Now
    TTI SIA429DJT-T1-GE3 Reel 21,000 3,000
    • 1 -
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    • 100 -
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    • 10000 $0.173
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    TME SIA429DJT-T1-GE3 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.294
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    EBV Elektronik SIA429DJT-T1-GE3 22 Weeks 3,000
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    Vishay Huntington SIA429DJT-T1-GE3

    MOSFET P-CH 20V 12A SC-70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIA429DJT-T1-GE3 11,366
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.2077
    • 10000 $0.18
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    SIA429DJT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA429DJT-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 12A SC-70 Original PDF

    SIA429DJT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA429DJT www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA429DJT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA429DJT SC-70 2002/95/EC SC-70-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiA429DJT

    Abstract: 67110
    Text: SPICE Device Model SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA429DJT 18-Jul-08 67110

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA429DJT SC-70 2002/95/EC SC-70-6L-Single 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA429DJT SC-70 2002/95/EC SC-70-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA429DJT SC-70 2002/95/EC SC-70-6L-Single 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA429DJT SC-70 2002/95/EC SC-70-6L-Single 18-Jul-08

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		PDF AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		PDF SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    SiB431EDK

    Abstract: No abstract text available
    Text: Portable Media Player Table of Contents AUDIO, Headphones. 3 AUDIO,


    Original     		PDF LLP1010-6L LLP75-6L VEMI45AC-HNH VEMI65AC-HCI LLP2513-13L VEMI85AC-HGK LLP1713-9L LLP3313-17L SiB431EDK