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    SI8489EDB Price and Stock

    Vishay Siliconix SI8489EDB-T2-E1

    MOSFET P-CH 20V 4MICROFOOT
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    DigiKey SI8489EDB-T2-E1 Digi-Reel 4,097 1
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    SI8489EDB-T2-E1 Cut Tape 4,097 1
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    SI8489EDB-T2-E1 Reel 3,000
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    RS SI8489EDB-T2-E1 Bulk 20
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    Vishay Intertechnologies SI8489EDB-T2-E1

    Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8489EDB-T2-E1)
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    Avnet Americas SI8489EDB-T2-E1 Reel 18 Weeks 3,000
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    Mouser Electronics SI8489EDB-T2-E1 12,344
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    Verical SI8489EDB-T2-E1 3,000 3,000
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    Arrow Electronics SI8489EDB-T2-E1 3,000 18 Weeks 3,000
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    Newark SI8489EDB-T2-E1 Reel 3,000
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    TTI SI8489EDB-T2-E1 Reel 9,000 3,000
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    Avnet Asia SI8489EDB-T2-E1 23 Weeks 3,000
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    EBV Elektronik SI8489EDB-T2-E1 22 Weeks 3,000
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    SI8489EDB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8489EDB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V MICROFOOT Original PDF

    SI8489EDB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si8489

    Abstract: No abstract text available
    Text: Si8489EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.044 at VGS = - 10 V - 5.4 0.054 at VGS = - 4.5 V - 4.9 0.082 at VGS = - 2.5 V - 3.9 VDS (V) - 20 Qg (Typ.) 9.5 nC • Material categorization:


    Original     		PDF Si8489EDB Si8489trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8489

    S1217

    Abstract: No abstract text available
    Text: Si8489EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.044 at VGS = - 10 V - 5.4 0.054 at VGS = - 4.5 V - 4.9 0.082 at VGS = - 2.5 V - 3.9 VDS (V) - 20 Qg (Typ.) 9.5 nC • Material categorization:


    Original     		PDF Si8489EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 S1217

    Untitled

    Abstract: No abstract text available
    Text: Si8489EDB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.044 at VGS = -10 V -5.4 0.054 at VGS = -4.5 V -4.9 0.082 at VGS = -2.5 V -3.9 Qg (TYP.) 9.5 nC 1 x xxx xx x m m 1 • Small 1 mm x 1 mm max. outline area


    Original     		PDF Si8489EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		PDF Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		PDF 1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		PDF Si8489EDB Si8902AEDB VMN-PT0107-1402