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Vishay Siliconix SI7356ADP-T1-E3 MOSFET N-CH 30V 40A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7356ADP-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI7356ADP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7356ADP-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI7356ADP-T1-E3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI7356ADP-T1-E3		2,968			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI7356ADP-T1-E3		2,374			1 $7.0884 10 $7.0884 100 $7.0884 1000 $3.5442 10000 $3.5442	Buy Now
	SI7356ADP-T1-E3		2,230			1 $5.907 10 $5.907 100 $5.907 1000 $2.9535 10000 $2.9535	Buy Now

SI7356ADP Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI7356ADP-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A PPAK 8SOIC		Original	PDF
SI7356ADP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A PPAK 8SOIC		Original	PDF

SI7356ADP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si7356ADP Abstract: No abstract text available Text: SPICE Device Model Si7356ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si7356ADP 18-Jul-08
Untitled Abstract: No abstract text available Text: Si7356ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.003 at VGS = 10 V 40 0.004 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 46 nC • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET Gen II	Original	PDF	Si7356ADP Si7356ADP-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si7356ADP Abstract: Si7356ADP-T1-E3 Si7356ADP-T1-GE3 Text: Si7356ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.003 at VGS = 10 V 40 0.004 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 46 nC • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET Gen II	Original	PDF	Si7356ADP Si7356ADP-T1-E3 Si7356ADP-T1-GE3 18-Jul-08
SI7356ADP Abstract: No abstract text available Text: Si7356ADP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.003 @ VGS = 10 V 40 0.004 @ VGS = 4.5 V 40 VDS (V) 30 Qg (Typ) 46 nC D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II D New Low Thermal Resistance PowerPAKr	Original	PDF	Si7356ADP 107-mm Si7356ADP-T1--E3 08-Apr-05
Si7356ADP Abstract: 20NC15 Text: Si7356ADP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.003 @ VGS = 10 V 40 0.004 @ VGS = 4.5 V 40 VDS (V) 30 Qg (Typ) 46 nC D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II D New Low Thermal Resistance PowerPAKr	Original	PDF	Si7356ADP 107-mm Si7356ADP-T1--E3 08-Apr-05 20NC15
Untitled Abstract: No abstract text available Text: Si7356ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.003 at VGS = 10 V 40 0.004 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 46 nC • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET Gen II	Original	PDF	Si7356ADP Si7356ADP-T1-E3 Si7356ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
SI7356ADP Abstract: No abstract text available Text: Si7356ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.003 at VGS = 10 V 40 0.004 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 46 nC • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET Gen II	Original	PDF	Si7356ADP Si7356ADP-T1-E3 Si7356ADP-T1-GE3 08-Apr-05
Si7356ADP Abstract: No abstract text available Text: Si7356ADP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.003 @ VGS = 10 V 40 0.004 @ VGS = 4.5 V 40 VDS (V) 30 Qg (Typ) 46 nC D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II D New Low Thermal Resistance PowerPAKr	Original	PDF	Si7356ADP 107-mm Si7356ADP-T1--E3 S-51011--Rev. 23-May-05
Si7356ADP-T1-E3 Abstract: Si7356ADP 74068 Si7356DP Si7356DP-T1 Si7356DP-T1-E3 c2570 Text: Specification Comparison Vishay Siliconix Si7356ADP vs. Si7356DP Description: N-Channel, 30 V D-S MOSFET Package: PowerPAK SO-8 Pin Out: Identical Part Number Replacements: Si7356ADP-T1-E3 Replaces Si7356DP-T1-E3 Si7356ADP-T1 Replaces Si7356DP-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	PDF	Si7356ADP Si7356DP Si7356ADP-T1-E3 Si7356DP-T1-E3 Si7356ADP-T1 Si7356DP-T1 09-Nov-06 74068 c2570
Untitled Abstract: No abstract text available Text: Si7356ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.003 at VGS = 10 V 40 0.004 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 46 nC • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET Gen II	Original	PDF	Si7356ADP Si7356ADP-T1-E3 Si7356ADP-T1-GE3 11-Mar-11
5a6 zener diode Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415 Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical	Original	PDF	Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415