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    Vishay Siliconix SI6469DQ-T1-E3

    MOSFET P-CH 8V 8TSSOP
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    DigiKey SI6469DQ-T1-E3 Reel 3,000
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    Vishay Siliconix SI6469DQ-T1-GE3

    MOSFET P-CH 8V 8TSSOP
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    Vishay Intertechnologies SI6469DQ-T1-GE3

    MOSFETs 8.0V 6.0A 1.5W 28mohm @ 4.5V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI6469DQ-T1-GE3
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    SI6469DQ Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si6469DQ Vishay Intertechnology Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI6469DQ Vishay Siliconix MOSFETs Original PDF
    Si6469DQ SPICE Device Model Vishay Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI6469DQ-T1 Vishay Intertechnology Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI6469DQ-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 8TSSOP Original PDF
    SI6469DQ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 8TSSOP Original PDF

    SI6469DQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A 1469 mosfet

    Abstract: AN609 Si6469DQ
    Text: Si6469DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si6469DQ AN609 29-Jun-07 A 1469 mosfet

    Si6469DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6469DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6469DQ S-52517Rev. 12-Dec-05

    Si6469DQ

    Abstract: No abstract text available
    Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) 8 –8 rDS(on) (W) ID (A) 0.028 @ VGS = –4.5 V "6.0 0.031 @ VGS = –3.3 V "5.8 0.040 @ VGS = –2.5 V "5.0 0.065 @ VGS = –1.8 V "3.6 S TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S


    Original     		PDF Si6469DQ S-60717--Rev. 01-Feb-99

    Untitled

    Abstract: No abstract text available
    Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) 8 –8 rDS(on) (W) ID (A) 0.028 @ VGS = –4.5 V "6.0 0.031 @ VGS = –3.3 V "5.8 0.040 @ VGS = –2.5 V "5.0 0.065 @ VGS = –1.8 V "3.6 S TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S


    Original     		PDF Si6469DQ 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si6469DQ Si6469DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si6469DQ

    Abstract: No abstract text available
    Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si6469DQ Si6469DQ-T1-GE3 18-Jul-08

    Si6469DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6469DQ Dual P-Channel 1.8-V G-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si6469DQ

    Untitled

    Abstract: No abstract text available
    Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si6469DQ Si6469DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si6469DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6469DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6469DQ 18-Jul-08

    Si6469DQ

    Abstract: No abstract text available
    Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si6469DQ Si6469DQ-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) ID (A) 0.028 @ VGS = –4.5 V "6.0 0.031 @ VGS = –3.3 V "5.8 0.040 @ VGS = –2.5 V "5.0 0.065 @ VGS = –1.8 V "3.6 S TSSOP-8 D 1 S 2 S 3 G 4 D Si6469DQ


    Original     		PDF Si6469DQ S-60717--Rev. 01-Feb-99

    Si6469DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6469DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6469DQ 30-Apr-01

    Untitled

    Abstract: No abstract text available
    Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si6469DQ Si6469DQ-T1-GE3 08-Apr-05

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3